Chun-Yuan Wang

发表

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Miin-Jang Chen, Po-Hsien Cheng, Chun-Yuan Wang, 2017, Scientific Reports.

Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices

Miin-Jang Chen, Chun-Yuan Wang, J. Shyue, 2022, Applied Surface Science.

Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Chun-Yuan Wang, Teng-Jan Chang, Hsin-Chih Lin, 2019, RSC advances.

Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2

Miin-Jang Chen, Chun-Yuan Wang, Teng-Jan Chang, 2021 .

Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors

J. Shieh, Chun-Yuan Wang, Teng-Jan Chang, 2022, Journal of the European Ceramic Society.

Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering

M. Shiojiri, Miin-Jang Chen, Chun-Yuan Wang, 2020 .

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Miin-Jang Chen, Po-Hsien Cheng, Chun-Yuan Wang, 2017, Scientific Reports.

Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget

Miin-Jang Chen, Chun-Yuan Wang, Teng-Jan Chang, 2021, Applied Surface Science.

Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2 thin films scaled down to 3 nm

Miin-Jang Chen, Chun-Yuan Wang, Teng-Jan Chang, 2021, Journal of Materials Chemistry C.

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

Miin-Jang Chen, Chun-Yuan Wang, Teng-Jan Chang, 2020 .

Dielectric Constant Enhancement and Leakage Current Suppression of Metal–Insulator–Metal Capacitors by Atomic Layer Annealing and the Capping Layer Effect Prepared with a Low Thermal Budget

Chun-Yuan Wang, Hsin-Chih Lin, Chun-Yi Chou, 2023, ACS Applied Electronic Materials.

Dielectric properties and reliability enhancement of atomic layer deposited thin films by in situ atomic layer substrate biasing

Miin-Jang Chen, J. Yang, Chun-Yuan Wang, 2020 .