Y. Lu

Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities

C. A. Richter, S. Koester, S. Koswatta, 2010, 68th Device Research Conference.

Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs

Huili Xing, Guangle Zhou, P. Fay, 2011, 69th Device Research Conference.

Fluorine Effect on Boron Diffusion of P+ Gate Devices

Y. Lu, L. Manchanda, 1989 .

A 16nm FinFET CMOS technology for mobile SoC and computing applications

H. T. Lin, Shien-Yang Wu, T. Miyashita, 2013, 2013 IEEE International Electron Devices Meeting.

13.6 Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs

A. Seabaugh, S. Koswatta, J. Kuo, 2011 .