C. Eddy

发表

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates a

Huili, W. Haensch, A. Seabaugh, 2013, 1310.6823.

Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers

K. Lew, R. Myers-Ward, C. Eddy, 2010 .

Development toward wafer-scale graphene RF electronics

P. Asbeck, J. Moon, P. Campbell, 2009, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

P. Asbeck, J. Moon, P. Campbell, 2010, IEEE Electron Device Letters.

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

J. Moon, P. Campbell, R. Myers-Ward, 2009, IEEE Electron Device Letters.

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

K. Hobart, A. Koehler, L. O. Nyakiti, 2012, IEEE Electron Device Letters.

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

P. Campbell, K. Hobart, R. Myers-Ward, 2009, ACS nano.

Design of Gallium Nitride Resonant Cavity Light‐Emitting Diodes on Si Substrates

C. Eddy, R. Henry, J. Caldwell, 2008 .

Wurtzite III–Nitride Distributed Bragg Reflectors on Si(100) Substrates

Jr., C. Eddy, M. Twigg, 2006, 2009.01198.

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

C. Eddy, D. Gaskill, M. Twigg, 2005, 2009.01635.

Expansion of Shockley Stacking faults in high doped 4H-SiC epilayers

K. Hobart, R. Myers-Ward, C. Eddy, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

P M Campbell, P. Asbeck, Kangmu Lee, 2011, IEEE Electron Device Letters.

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2014 .

On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC

J. Butler, T. Feygelson, K. Hobart, 2010 .

Development of wafer-scale graphene RF electronics

P. Asbeck, J. Moon, P. Campbell, 2010, The 5th European Microwave Integrated Circuits Conference.

Epitaxial graphene RF field-effect transistors

P. Asbeck, D. K. Gaskill, D. Curtis, 2009, 2009 Device Research Conference.

Ion-implanted edge termination for GaN Schottky diode rectifiers

Francis J. Kub, S. Noor Mohammad, Charles R. Eddy, 2006 .

Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3

S. George, C. Eddy, J. Hite, 2019, Applied Physics Letters.

Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching

K. Hobart, C. Eddy, T. Anderson, 2009, 2009 International Semiconductor Device Research Symposium.

Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

M. V. Rao, R. Vispute, J. Freitas, 2007 .

The Effect of Hydrogen-Based, High Density Plasma Etching on the Electronic Properties of Gallium Nitride

C. Eddy, B. Molnar, 1995 .

Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

J. Kim, C. Eddy, J. Hite, 2010 .

Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

Xiaojun Weng, Maxwell Wetherington, Eric Frantz, 2009, Nano letters.

Investigation of AlGaN / GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy

K. Hobart, A. Koehler, C. Eddy, 2012 .

Broadband measurements of the refractive indices of bulk gallium nitride

Jerry R. Meyer, Christopher G. Brown, I. Vurgaftman, 2014 .

Characterization of the CH4/H2/Ar high density plasma etching process for ZnSe

C. Eddy, V. Shamamian, D. Leonhardt, 2001 .

Nanometer scale fabrication in mercury cadmium telluride using methane/hydrogen electron cyclotron resonance microwave plasmas

E. Dobisz, C. Eddy, J. Meyer, 1993 .

Non-toxic inhibition of HIV-1 replication with silver–copper nanoparticles

C. Eddy, A. Boasso, Andrew W. Hardy, 2010, Medicinal Chemistry Research.

Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

P. Klein, C. Eddy, Jihyun Kim, 2011, Optics express.

Hall effect mobility of epitaxial graphene grown on silicon carbide

Charles R. Eddy, D. Kurt Gaskill, Jr., 2009, 0907.5026.

Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide

M. Schubert, T. Hofmann, C. M. Herzinger, 2013 .

Dry Techniques for Epitaxial Graphene Transfer

P. Campbell, K. Hobart, R. Myers-Ward, 2010 .

Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor

K. Lew, R. Myers-Ward, C. Eddy, 2007 .

A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth

C. Eddy, M. Twigg, R. Henry, 2004 .

Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures

J. Kim, F. Ren, S. Pearton, 2006 .

Determination of GaN polarity on periodically oriented surfaces

C. Eddy, M. Reshchikov, J. Hite, 2015 .

Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition

David I. Shahin, K. Hobart, A. Koehler, 2016 .

Electron cyclotron resonance reactive ion etching of fine features in HgxCd1−xTe using CH4/H2 plasmas

E. Dobisz, C. Eddy, J. Meyer, 1993 .

Plasma etch-induced conduction changes in gallium nitride

C. Eddy, B. Molnar, 1999 .

Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition

A. Koehler, V. Wheeler, C. Eddy, 2020 .

Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates.

C. Eddy, J. Hite, B. Feigelson, 2015, ACS applied materials & interfaces.

Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes

J. Zhao, X. Xin, Jun Hu, 2011, IEEE Transactions on Nuclear Science.

Mode-locked 2-μm wavelength fiber laser using a graphene-saturable absorber

Fritz J. Kub, Nelson Y. Garces, Marc Currie, 2013 .

Secondary electron dopant contrast imaging of compound semiconductor junctions

M. Skowronski, V. Wheeler, R. Myers-Ward, 2011 .

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Reactive-ion etching of tungsten for high-resolution x-ray masks

Martin C. Peckerar, Charles R. Eddy, Christie R. Marrian, 1994, Advanced Lithography.

4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm

Xiaobin Xin, Kok-Keong Lew, J.H. Zhao, 2008, IEEE Transactions on Electron Devices.

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jian H. Zhao, P. Alexandrov, X. Xin, 2008 .

4 H-SiC Single Photon Avalanche Diode for 280 nm UV Applications

Jian H. Zhao, P. Alexandrov, X. Xin, 2007 .

Approach for dislocation free GaN epitaxy

C. Eddy, J. Hite, M. Mastro, 2010 .

Improved GaN materials and devices through confined epitaxy

M. Peckerar, Y. Ngu, F. Perkins, 2007 .

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO 2 thin films

Jr., V. Wheeler, C. Eddy, 2016, 1602.06340.

Challenges to graphene growth on SiC(0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient

M. V. Rao, Jennifer K. Hite, Charles R. Eddy, 2015 .

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

K. Hobart, C. Eddy, T. Anderson, 2014 .

Comparison of AlN encapsulants for high-temperature GaN annealing

K. Hobart, C. Eddy, T. Anderson, 2014 .

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

M. Ancona, K. Hobart, K. Lew, 2011, IEEE Transactions on Electron Devices.

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

K. Hobart, C. Eddy, T. Anderson, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Plasmonically enhanced emission from a group-III nitride nanowire emitter

J. Freitas, C. Eddy, R. Rendell, 2007 .

GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes.

F. Ren, K. Baik, S. Pearton, 2013, Optics express.

Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

J. Freitas, V. Wheeler, C. Eddy, 2019, Chemistry of Materials.

Field-plate design for edge termination in silicon carbide high-power Schottky diodes

C. Eddy, S. Mohammad, F. Kub, 2011 .

Self-aligned ALD AlOx T-gate footprint insulator for gate leakage current suppression in SiNx passivated AlGaN/GaN HEMTs

D. Katzer, S. Binari, C. Eddy, 2009, 2009 International Semiconductor Device Research Symposium.

Selective switching of GaN polarity on Ga-polar GaN using atomic layer deposited Al2O3

C. Eddy, R. Goswami, F. Kub, 2014 .

Correlation of threading screw dislocation density to GaN 2-DEG mobility

C. Eddy, D. Meyer, J. Hite, 2014 .

Periodically oriented gallium nitride: Materials development

I. Vurgaftman, J. Freitas, C. Eddy, 2014, 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.

Initiating polarity inversion in GaN growth using an AlN interlayer

C. Eddy, M. Twigg, F. Kub, 2011 .

A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance

David I. Shahin, K. Hobart, A. Koehler, 2017 .

Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

C. Eddy, M. Twigg, R. Henry, 2005 .

Nickel Foam as a Substrate for III-nitride Nanowire Growth

C. Eddy, F. Kub, N. Nepal, 2013, 2009.02143.

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

Jian H. Zhao, X. Xin, Jun Hu, 2011 .

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

J. Freitas, C. Eddy, R. Henry, 2007 .

Structural Characterization of Atomic Layer Deposited Vanadium Dioxide

Virginia R. Anderson, V. Wheeler, C. Eddy, 2017 .

Assembly of phosphonic acids on GaN and AlGaN

N. D. Theodore, P. Pehrsson, C. Eddy, 2010 .

Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

P. Campbell, R. Myers-Ward, C. Eddy, 2009, Nano letters.

Surface chemistry and damage in the high density plasma etching of gallium arsenide

C. Eddy, O. Glembocki, R. Holm, 1998 .

Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

C. Eddy, H. Meyer, N. Nepal, 2015 .

Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN

C. Eddy, R. Henry, R. Holm, 2005 .

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

C. Eddy, M. Twigg, J. Caldwell, 2009 .

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN

V. Wheeler, C. Eddy, N. Nepal, 2014 .

Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

F. Ren, S. Pearton, C. Eddy, 2020 .

Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3

David I. Shahin, V. Wheeler, C. Eddy, 2017 .

Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

K. Hobart, A. Koehler, V. Wheeler, 2016 .

Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2009 .

Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method

C. Eddy, J. A. Freitas, F. Kub, 2009 .

Dry Techniques for Epitaxial Graphene Transfer: Wafer Bonding Approaches for Expanded Functionality

P. Campbell, K. Hobart, R. Myers-Ward, 2010 .

Comparison of (CH4O2)bH2 and COH2 plasmas for low temperature diamond film deposition by electron cyclotron resonance plasma-assisted chemical vapor deposition

D. Youchison, C. Eddy, B. Sartwell, 1994 .

Multi-carrier Transport in Epitaxial Multi-layer Graphene

C. Dimitrakopoulos, A. Grill, P. Avouris, 2010, 1009.0183.

Hall effect mobility of epitaxial graphene grown on silicon carbide

Jr., P. Campbell, R. Myers-Ward, 2009, 0907.5026.

Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H‐SiC mesas

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Large-Area Epitaxial Graphene: Effect of Strain and Thickness on Electronic Properties

P. Campbell, R. Myers-Ward, C. Eddy, 2009 .

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

C. Dimitrakopoulos, K. Jenkins, P. Avouris, 2011, IEEE Electron Device Letters.

Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers

P. Asbeck, J. Moon, P. Campbell, 2010, 68th Device Research Conference.

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Jr., P. Campbell, R. Myers-Ward, 2010, 1007.5064.

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

C. Eddy, M. Twigg, R. Henry, 2006 .

Observations on C-Face SiC Graphene Growth in Argon

V. Wheeler, R. Myers-Ward, C. Eddy, 2011 .

Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction

C. Eddy, J. Hite, M. Mastro, 2010 .

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO 2 thin films

Jr., V. Wheeler, C. Eddy, 2016, 1602.06340.

High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

V. Wheeler, R. Myers-Ward, C. Eddy, 2013 .

Oxygen functionalised epitaxial graphene sensors for enhanced polar organic chemical vapour detection

V. Wheeler, R. Myers-Ward, C. Eddy, 2012, 2012 IEEE Sensors.

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001) 6 H-SiC

K. W. Kim, M. Nardelli, G. Sumanasekera, 2012 .

Diamond thin film growth on silicon at temperatures between 500 and 600 °C using an electron cyclotron resonance microwave plasma source

D. Youchison, C. Eddy, B. Sartwell, 1991 .

Multi-component response in multilayer graphene revealed through terahertz and infrared magneto-spectroscopy

A. Markelz, R. Myers-Ward, C. Eddy, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching

E. Dobisz, C. Eddy, C. Hoffman, 1993 .

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

F. Peeters, V. Wheeler, R. Myers-Ward, 2014, 1407.1189.

Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations

P. Klein, K. Lew, R. Myers-Ward, 2010 .

Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires

P. Pehrsson, C. Eddy, Jihyun Kim, 2011, IEEE Transactions on Electron Devices.

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

V. Wheeler, C. Eddy, D. Gaskill, 2011 .

Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

P. Campbell, P. Sheehan, R. Myers-Ward, 2010, Nano letters.

Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence

G. Simin, V. Wheeler, C. Eddy, 2019 .

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

K. Hobart, R. Myers-Ward, C. Eddy, 2011 .

Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Virginia R. Anderson, Scooter D. Johnson, K. Ludwig, 2017 .

Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

F. Ren, S. Pearton, C. Eddy, 2016 .

Silicon Carbide as a Platform for Power Electronics

C. Eddy, D. Gaskill, 2009, Science.

Self-assembled monolayers of alkylphosphonic acid on GaN substrates.

C. Eddy, K. Hohn, R. Henry, 2008, Langmuir : the ACS journal of surfaces and colloids.

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

C. Eddy, D. Smith, J. Edgar, 1996 .

Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

C. Eddy, M. Twigg, R. Henry, 2006, 2009.01207.

Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Thick-Film Yttrium Iron Garnet Coatings via Aerosol Deposition

Scooter D. Johnson, C. Eddy, E. Gorzkowski, 2016 .

Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition.

Scooter D. Johnson, C. Eddy, F. Kub, 2015, Journal of visualized experiments : JoVE.

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

P. Neudeck, C. Eddy, M. Twigg, 2010 .

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Y. Liu, R. Myers-Ward, C. Eddy, 2019, Physical Review B.

Characterization of high density CH4/H2/Ar plasmas for compound semiconductor etching

C. Eddy, V. Shamamian, D. Leonhardt, 1999 .

Quantum linear magnetoresistance in multilayer epitaxial graphene.

P. Campbell, F. Perkins, R. Myers-Ward, 2010, Nano letters.

Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy

M. Skowronski, V. Wheeler, R. Myers-Ward, 2011 .

X-ray diffraction study of crystal plane distortion in silicon carbide substrates

K. Lew, C. Eddy, D. Gaskill, 2006 .

Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

David I. Shahin, K. Hobart, A. Koehler, 2016 .

Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

Jr., F. Ren, S. Pearton, 2019, International Journal of High Speed Electronics and Systems.

Development of solar-blind photodetectors based on Si-implanted β-Ga(2)O(3).

Jihyun Kim, Younghun Jung, C. Eddy, 2015, Optics express.

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

M. A. Mastro, C. R. Eddy, J. Butler, 2010, IEEE Electron Device Letters.

Aerosol Deposition of Yttrium Iron Garnet for Fabrication of Ferrite-Integrated On-Chip Inductors

Scooter D. Johnson, H. Newman, C. Eddy, 2015, IEEE Transactions on Magnetics.

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Jennifer K. Hite, Michael A. Mastro, Travis J. Anderson, 2018, Journal of Crystal Growth.

Effect of Surface Morphology on Diode Performance in Vertical GaN Schottky Diodes

Jennifer K. Hite, Michael A. Mastro, Travis J. Anderson, 2017 .

Selective chemical etch of gallium nitride by phosphoric acid

J. Freitas, C. Eddy, H. Kim, 2012 .

Surface-Induced Transients in Gallium Nitride Nanowires

P. Pehrsson, C. Eddy, B. Simpkins, 2009 .

Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

Charles R. Eddy, D. Kurt Gaskill, N. Y. Garces, 2012 .

Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures

C. Eddy, R. Goswami, S. Qadri, 2021, Coatings.

Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3

David I. Shahin, V. Wheeler, C. Eddy, 2017 .

c-Boron–aluminum nitride alloys prepared by ion-beam assisted deposition

C. Eddy, J. Edgar, C. Carosella, 1997 .

The influence of CH4/H2/Ar plasma etching on the conductivity of n‐type gallium nitride

C. Eddy, K. Doverspike, B. Molnar, 1995 .

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Jaime A. Freitas, Jordan D. Greenlee, Fritz J. Kub, 2016, Journal of Electronic Materials.

Nanocrystalline Diamond Integration with III-Nitride HEMTs

B. Pate, T. Feygelson, K. Hobart, 2017 .

Nanocrystalline Diamond for near Junction Heat Spreading in GaN Power HEMTs

B. Pate, T. Feygelson, K. Hobart, 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

The transport and quantum capacitance properties of epitaxial graphene

Yuyuan Tian, D. Ferry, R. Myers-Ward, 2010 .

Boron nitride thin film deposition from solid borane ammonia using an electron cyclotron resonance microwave plasma source

C. Eddy, B. Sartwell, 1995 .

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

Jennifer K. Hite, Michael A. Mastro, C. R. Eddy, 2009 .

Characterization of electron cyclotron resonance plasmas optimized for the deposition of polycrystalline diamond films

D. Youchison, C. Eddy, B. Sartwell, 1993 .

Deposition of diamond onto aluminum by electron cyclotron resonance microwave plasma-assisted CVD

D. Youchison, C. Eddy, K. Grabowski, 1992 .

Characterization of electron cyclotron resonance plasmas by vacuum ultraviolet spectroscopy

C. Eddy, G. Mehlman, S. Douglass, 1995 .

High Density Plasma Diagnostics For Predictive Model Development

C. Eddy, S. Douglass, 1995 .

Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Jordan D. Greenlee, Francis J. Kub, Andrew D. Koehler, 2014, IEEE Electron Device Letters.

Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC

B. Pate, T. Feygelson, F. Calle, 2014, IEEE Electron Device Letters.

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

F. Calle, K. Hobart, V. Wheeler, 2012 .

Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy

M. Mehl, C. Eddy, S. Qadri, 2013 .

Development of periodically oriented gallium nitride for non-linear optics [Invited]

Jaime A. Freitas, Jerry R. Meyer, Steven R. Bowman, 2012 .

Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices

C. Li, M. Goorsky, K. Hobart, 2019, ECS Journal of Solid State Science and Technology.

Bilayer graphene grown on 4H-SiC (0001) step-free mesas.

J. W. Baldwin, P. Campbell, V. Wheeler, 2012, Nano letters.

In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth

Virginia R. Anderson, Scooter D. Johnson, K. Ludwig, 2019, Journal of Vacuum Science & Technology A.

Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition

Scooter D. Johnson, K. Ludwig, C. Eddy, 2022, Journal of Vacuum Science & Technology A.

The role of plasma in plasma-enhanced atomic layer deposition of crystalline films

V. Wheeler, C. Eddy, S. Qadri, 2020 .

Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

V. Wheeler, C. Eddy, S. Qadri, 2019 .

Influence of temperature on atomic layer epitaxial growth of indium nitride assessed within situgrazing incidence small-angle x-ray scattering

Scooter D. Johnson, K. Ludwig, C. Eddy, 2019, Journal of Vacuum Science and Technology.

Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations

Scooter D. Johnson, C. Palmstrøm, K. Ludwig, 2019, Journal of Vacuum Science and Technology.

Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy

Virginia R. Anderson, Scooter D. Johnson, C. Eddy, 2018, Journal of Vacuum Science and Technology.

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Virginia R. Anderson, C. Eddy, N. Nepal, 2015 .

Perspectives on future directions in III-N semiconductor research

C. Eddy, N. Nepal, J. Hite, 2013 .

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

J. Freitas, P. Klein, K. Lew, 2010 .

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

R. Myers-Ward, C. Eddy, D. Gaskill, 2009 .

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

P. Neudeck, K. Hobart, C. Eddy, 2006 .

Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide

J. Butler, D. Katzer, C. Eddy, 1998 .

Overview of the 100 mA average-current RF photoinjector

M. Cole, D. Rees, Dinh C. Nguyen, 2004 .

Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Jordan D. Greenlee, J. Freitas, K. Hobart, 2016 .

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

M. Abraham, C. Eddy, T. Anderson, 2012 .

Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process

J. Butler, C. Eddy, S. Pang, 1997 .

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

C. Eddy, S. Qadri, N. Mahadik, 2013 .

Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3

F. Ren, S. Pearton, C. Eddy, 2019, ECS Journal of Solid State Science and Technology.

Atomic layer epitaxy for quantum well nitride-based devices

Jaime A. Freitas, Jennifer K. Hite, Neeraj Nepal, 2016, SPIE OPTO.

Characterization of Cl2/Ar high density plasmas for semiconductor etching

C. Eddy, V. Shamamian, D. Leonhardt, 1999 .

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

M. Skowronski, K. Lew, R. Myers-Ward, 2008 .

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

D. K. Gaskill, N. Y. Garces, Virginia D. Wheeler, 2012 .

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

J. Moon, Y. Liu, P. Campbell, 2011 .

Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect

R. Myers-Ward, C. Eddy, D. Gaskill, 2013, Scientific Reports.

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

V. Wheeler, R. Myers-Ward, C. Eddy, 2013, 1501.04872.

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Francis J. Kub, Andrew D. Koehler, Neeraj Nepal, 2013, IEEE Electron Device Letters.

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

K. Hobart, C. Eddy, T. Anderson, 2009, IEEE Electron Device Letters.

Graphene Formation on SiC Substrates

P. Campbell, R. Myers-Ward, C. Eddy, 2009, 0907.5028.

Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

C. Eddy, J. Hite, M. Mastro, 2011 .

Emission enhancement from nonpolar a-plane III-nitride nanopillar

C. Eddy, N. Nepal, J. Hite, 2011 .

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

C. Eddy, J. Bang, H. Kim, 2008 .

Surface depletion effects in semiconducting nanowires

P. Pehrsson, C. Eddy, B. Simpkins, 2008 .

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Liang Wang, K. Lew, R. Myers-Ward, 2009 .

Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

C. Eddy, J. A. Freitas, F. Kub, 2010 .

Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

G. Simin, Xuhong Hu, V. Wheeler, 2019, Semiconductor Science and Technology.

Guided resonances in asymmetrical GaN photonic crystal slabs observed in the visible spectrum.

Shouyuan Shi, Dennis Prather, Mijin Kim, 2005, Optics express.

Multilayer graphene, Moir\'e patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

F. Peeters, V. Wheeler, R. Myers-Ward, 2014, 1412.8680.

Epitaxial graphene nucleation on C-face silicon carbide.

R. Myers-Ward, C. Eddy, D. Gaskill, 2011, Nano letters.

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

M. Skowronski, V. Wheeler, R. Myers-Ward, 2013 .

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers

M. Skowronski, V. Wheeler, R. Myers-Ward, 2011 .

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Nitrogen-polar gallium nitride substrates as solid-state pH-selective potentiometric sensors

C. Eddy, Takashi Ito, J. Hite, 2009 .

GaN-based photonic crystals and integrated optics

C. Eddy, K. Bussmann, R. Henry, 2006, 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

P. Neudeck, C. Eddy, M. Twigg, 2005 .

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

Byung Jae Kim, K. Baik, C. Eddy, 2011 .

Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors

F. Ren, S. Pearton, C. Eddy, 2016 .

Electromagnetic propagation in nanostructures

C. Eddy, M. Mastro, R. Holm, 2008 .

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Jaime A. Freitas, Jennifer K. Hite, Michael A. Mastro, 2011 .

Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

B. Pate, T. Feygelson, K. Hobart, 2012 .

GaN vertical and lateral polarity heterostructures on GaN substrates

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2011 .

Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)

V. Wheeler, R. Myers-Ward, C. Eddy, 2013, 1501.05862.

Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime

D. K. Gaskill, Joseph L. Tedesco, C. R. Eddy, 2011 .

Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

V. Wheeler, R. Myers-Ward, C. Eddy, 2014 .

Graphene growth on SiC(000-1): optimization of surface preparation and growth conditions

D. K. Gaskill, Charles R. Eddy, Nelson Y. Garces, 2015, SPIE NanoScience + Engineering.

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2006 .

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

P. Neudeck, C. Eddy, M. Twigg, 2004 .

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

P. Neudeck, C. Eddy, M. Twigg, 2006 .

A Transmission Electron Microscopy Investigation of GaN grown on Patterned, Step-Free 4H-SiC Mesas

P. Neudeck, C. Eddy, M. Twigg, 2005, 2005 International Semiconductor Device Research Symposium.

Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2003 .

Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

C. Eddy, J. Hite, M. Mastro, 2010 .

Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

B. Pate, T. Feygelson, K. Hobart, 2016 .

Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

Tyler R. Mowll, C. Ventrice, V. Wheeler, 2016 .

Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

C. Eddy, N. Nepal, A. Acharya, 2015 .

High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

G. Simin, V. Wheeler, C. Eddy, 2020, physica status solidi (a).

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

K. Hobart, A. Koehler, V. Wheeler, 2014 .

Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Z. Liliental-Weber, V. Wheeler, C. Eddy, 2014 .

Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

C. Eddy, J. Hite, M. Mastro, 2010 .

Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates

Liang Wang, P. Klein, K. Lew, 2010 .

Etch rates for Si-face 4H-SiC using H2 and a C3H8 partial pressure

K. Lew, R. Myers-Ward, C. Eddy, 2007, 2007 International Semiconductor Device Research Symposium.

Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes.

C. Eddy, Jihyun Kim, J. Hite, 2011, Optics express.

Polarization fields in III-nitride nanowire devices

George T. Wang, C. Eddy, Jihyun Kim, 2010, Nanotechnology.

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Byung Jae Kim, F. Ren, S. Pearton, 2012 .

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

A. Seabaugh, D. Jena, H. Xing, 2012 .

Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires

P. Pehrsson, C. Eddy, B. Simpkins, 2011 .

Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs

Robert Bass, David J. Meyer, Charles R. Eddy, 2010, DRC 2010.

MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates

F. Calle, C. Eddy, J. M. Rojo, 2014, Journal of Electronic Materials.

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Jr., P. Campbell, R. Myers-Ward, 2009, ECS Transactions.

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

C. Eddy, Jihyun Kim, Byung-Jae Kim, 2010, Optics express.

High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications

J. Freitas, A. Osinsky, K. Hobart, 2021 .

Investigation of three-step epilayer growth approach of GaN films to minimize compensation

C. Eddy, M. Twigg, R. Henry, 2003 .

Electrical Characterization of the Graphene-SiC Heterojunction

K. Hobart, V. Wheeler, R. Myers-Ward, 2012 .

Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

C. Eddy, H. Meyer, M. Kirkham, 2013 .

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiNx Layers

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2010 .

Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas

P. Neudeck, M. Skowronski, C. Eddy, 2006 .

Plasma-Based Chemical Modification of Epitaxial Graphene

Charles R. Eddy, D. Kurt Gaskill, Sandra C. Hernández, 2012 .

Fabrication of GaN suspended photonic crystal membranes and resonant nanocavities on Si(111)

C. Eddy, K. Bussmann, R. Henry, 2007 .

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

K. Hobart, V. Wheeler, R. Myers-Ward, 2014 .

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

M. Ancona, K. Hobart, R. Myers-Ward, 2012 .

Invited) Nanocrystalline Diamond for Near Junction Heat Spreading in GaN Power HEMTs

B. Pate, T. Feygelson, K. Hobart, 2014 .

Integrated Optics Utilizing GaN-Based Layers on Silicon Substrates

C. Eddy, K. Bussmann, R. Henry, 2008 .

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

P. Klein, K. Lew, R. Myers-Ward, 2008 .

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

R. Myers-Ward, C. Eddy, D. Gaskill, 2010 .

Experimental study of plasmonically enhanced GaN nanowire light emitters

J. Freitas, C. Eddy, M. Twigg, 2008 .

Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene.

T. Murphy, M. Fuhrer, H. Drew, 2013, Nature nanotechnology.

Epitaxial Graphene Growth on SiC Wafers

Jr., J. Moon, P. Campbell, 2009, ECS Transactions.

GaN Power Transistors with Integrated Thermal Management

Tatyana I. Feygelson, Mario G. Ancona, Bradford B. Pate, 2013 .

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

M. V. Rao, A. Koehler, V. Wheeler, 2014 .

Positive Temperature Coefficient SiC PiN Diodes

M. Ancona, K. Hobart, V. Wheeler, 2012 .

Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

K. Baik, C. Eddy, Jihyun Kim, 2014, Physical chemistry chemical physics : PCCP.

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

P. Klein, K. Lew, R. Myers-Ward, 2010 .

Improved Chemical Detection and Ultra-Fast Recovery Using Oxygen Functionalized Epitaxial Graphene Sensors

V. Wheeler, R. Myers-Ward, C. Eddy, 2013, IEEE Sensors Journal.

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

R. Myers-Ward, C. Eddy, J. Goss, 2012 .

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jennifer K. Hite, Michael A. Mastro, Charles R. Eddy, 2010 .

Deep-level defects in epitaxial 4H-SiC irradiated with low-energy electrons

R. Myers-Ward, C. Eddy, D. Gaskill, 2010 .

Electrical and optical characterization of GaN micro-wires

C. Eddy, J. Hite, M. Mastro, 2011 .

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

C. Eddy, Jihyun Kim, H. Kim, 2011 .

H2 etching and epitaxial growth on 4H-SiC boule domes

K. Lew, R. Myers-Ward, C. Eddy, 2007, 2007 International Semiconductor Device Research Symposium.

Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

Tatyana I. Feygelson, Mario G. Ancona, Bradford B. Pate, 2014, IEEE Electron Device Letters.

Photo-enhanced chemical etched GaN LED on silicon substrate

C. Eddy, H. Kim, J. Hite, 2011 .

Silicon Carbide as a Platform for Power Electronics

C. Eddy, D. Gaskill, 2009, Science.

Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001)

V. Wheeler, R. Myers-Ward, C. Eddy, 2013 .

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

A. Seabaugh, D. Jena, H. Xing, 2014 .

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Yang Yang, Jennifer K. Hite, Charles R. Eddy, 2010, 1007.5064.

High temperature measurements of metal contacts on epitaxial graphene

D. K. Gaskill, Joseph L. Tedesco, C. R. Eddy, 2011 .

ZnS/diamond composite coatings for infrared transmission applications formed by the aerosol deposition method

Fritz J. Kub, Charles R. Eddy, Scooter D. Johnson, 2013, Defense, Security, and Sensing.