L. Arivazhagan

发表

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

C. Sarkar, D. Nirmal, J. Ajayan, 2018, AEU - International Journal of Electronics and Communications.

A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies

M. Saravanan, D. Nirmal, J. Ajayan, 2020 .

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

D. Nirmal, J. Ajayan, L. Arivazhagan, 2019, AEU - International Journal of Electronics and Communications.

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

D. Nirmal, J. Ajayan, P. Prajoon, 2017 .

A review of blue light emitting diodes for future solid state lighting and visible light communication applications

D. Nirmal, J. Ajayan, P. Prajoon, 2019 .

Variable thermal resistance model of GaN-on-SiC with substrate scalability

S. Chander, D. Nirmal, J. Ajayan, 2020 .

Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm

D. Nirmal, J. Ajayan, L. Arivazhagan, 2021, AEU - International Journal of Electronics and Communications.

Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications

D. Nirmal, J. Ajayan, L. Arivazhagan, 2019, 2019 2nd International Conference on Signal Processing and Communication (ICSPC).

A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

D. Nirmal, J. Ajayan, P. Prajoon, 2020, Silicon.

DC Performance analysis of AlGaN/GaN HEMT for future High power applications

Pratik P Pandit, D. Nirmal, J. Ajayan, 2018, 2018 4th International Conference on Devices, Circuits and Systems (ICDCS).

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

D. Nirmal, J. Ajayan, L. Arivazhagan, 2021, Silicon.

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

D. Nirmal, J. Ajayan, L. Arivazhagan, 2021, Silicon.

Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications

D. Nirmal, J. Ajayan, L. Arivazhagan, 2021, Silicon.

Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

D. Nirmal, J. Ajayan, L. Arivazhagan, 2019, International Journal of RF and Microwave Computer-Aided Engineering.

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

A. Jarndal, D. Nirmal, L. Arivazhagan, 2020, International Journal of RF and Microwave Computer-Aided Engineering.

A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

D. Nirmal, J. Ajayan, Dheena Kurian, 2021 .

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

J. Ajayan, A. S. Augustine Fletcher, B. Santhosh Kumar, 2019, Microelectron. J..

A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting

R. Kannan, N. Mohankumar, D. Nirmal, 2020 .

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, A. S. Augustine Fletcher, 2021, Microelectron. J..

Enhancement of Sensitivity in AlGaN/GaN HEMT Based Sensor Using Back-Barrier Technique

Talal Bonny, A. Jarndal, L. Arivazhagan, 2022, IEEE Sensors Journal.

Optimization of Design Space Parameters in Tunnel Fet for Analog/Mixed Signal Application

T. S. A. Samuel, L. Arivazhagan, J. E. Jeyanthi, 2022, Silicon.

An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

D. Nirmal, J. Ajayan, L. Arivazhagan, 2020, Silicon.

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

D. Nirmal, J. Ajayan, P. Prajoon, 2019, AEU - International Journal of Electronics and Communications.

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

D. Nirmal, J. Ajayan, L. Arivazhagan, 2022, Journal of Electronic Materials.

Numerical investigation of traps and optical response in III-V nitride quantum LED

D. Nirmal, J. Ajayan, P. Prajoon, 2020, Optical and Quantum Electronics.

Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications

W. Yeh, N. Mohankumar, D. Nirmal, 2020, Silicon.

Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging

D. Nirmal, J. Ajayan, L. Arivazhagan, 2019, Silicon.

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate

D. Nirmal, D. Godfrey, L. Arivazhagan, 2021, Microelectron. J..

LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications

M. Saravanan, D. Nirmal, J. Ajayan, 2019, Journal of Nanoelectronics and Optoelectronics.