S. Joglekar

发表

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors

S. Joglekar, 2017 .

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Evelyn N. Wang, Tomás Palacios, Omair I. Saadat, 2017, IEEE Transactions on Electron Devices.

Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

A. Uedono, Yu Cao, T. Palacios, 2014, 2014 International Workshop on Junction Technology (IWJT).

Simulation and Fabrication of GaN-Based Vertical and Lateral Normally-off Power Transistors by

B. Lu, T. Palacios, L. Kolodziejski, 2013 .

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

T. Palacios, E. Monroy, S. Joglekar, 2016 .

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Tomas Palacios, Tatsuya Fujishima, T. Palacios, 2013 .

Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors

T. Palacios, S. Joglekar, Yan Zhang, 2016, IEEE Transactions on Semiconductor Manufacturing.

Design space and origin of off-state leakage in GaN vertical power diodes

R. V. Mickevicius, H. Wong, S. Joglekar, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Reactive sputtering of III-N materials for applications in electronic devices

T. Palacios, S. Joglekar, M. Azize, 2016 .

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.

Ahmad Zubair, Tomás Palacios, Mildred Dresselhaus, 2017, Nanoscale.

Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

Daniel Piedra, Tomás Palacios, Ujwal Radhakrishna, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors

T. Palacios, S. Gradečak, S. Joglekar, 2016, IEEE Transactions on Electron Devices.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .