J. Mo

Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs

L. Li, Cui Yuxing, Zhi-Ming Wang, 2015 .

A 750-W AlGaN/GaN HEMT Operating at 80 V for $L$ -Band Applications

J. Mo, Xingchang Fu, Li-Jiang Zhang, 2018, IEEE Microwave and Wireless Components Letters.

High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation

Jiangfeng Du, Zhiyuan Bai, Qi Yu, 2015 .

Effect of Schottky Barrier Characteristics on the Power Density and Stability of GaN HFETs

J. Mo, S. Cai, Zheng Feng, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

High-power density SiC MESFETs with multi-recess gate

J. Mo, Lian Li, Yuan Wang, 2011 .

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment

Wengang Wu, J. Mo, Maojun Wang, 2022, IEEE Electron Device Letters.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

J. Mo, Zezhao He, Y. Lv, 2018 .

Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique

Wengang Wu, J. Mo, S. Cai, 2020 .

Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, J. Mo, 2020, Semiconductor Science and Technology.

S-Band 300 W Output SiC MESFET

J. Mo, S. Cai, Jia Li, 2013 .