X. B. Song

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

Zezhao He, S. J. Cai, Z. Feng, 2014 .

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

Z. Feng, C. Yu, Q. B. Liu, 2017, IEEE Electron Device Letters.

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

Zezhao He, X. B. Song, S. Cai, 2016 .