S. Cai

Z. Feng, S. Cai, Y. Lv, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Zhaojun Lin, S. Cai, T. Han, 2014 .

Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode

Zhaojun Lin, S. Cai, T. Han, 2013 .

High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

Kevin J. Chen, B. Zhang, Bo Zhang, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

Zezhao He, S. Cai, Jianchao Guo, 2021 .

High‐uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode

S. Cai, Y. Lv, Jia Li, 2020, Electronics Letters.

2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2

S. Cai, Jiandong Ye, T. Han, 2022, IEEE Transactions on Power Electronics.

Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al2O3 Dielectric

S. Cai, Y. Lv, Zhihong Feng, 2018, IEEE Transactions on Electron Devices.

Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage

Kevin J. Chen, Hongwei Chen, Chunhua Zhou, 2012, IEEE Electron Device Letters.

Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

S. Cai, Y. Lv, Zhihong Feng, 2017, IEEE Electron Device Letters.

Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

Kevin J. Chen, Hongwei Chen, Chunhua Zhou, 2012 .

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates*

Zezhao He, S. Cai, T. Han, 2016 .

Graphene Amplifier MMIC on SiC Substrate

Z. Feng, C. Yu, Q. B. Liu, 2016, IEEE Electron Device Letters.

Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities

Y. Hao, Jincheng Zhang, Xingchang Fu, 2021, IEEE Transactions on Power Electronics.

High Performance $\beta$-Ga2O3 Vertical Rectifier With Double Step Structure Termination Using Thermally Oxided TiOx Dielectrics

S. Cai, S. Dun, Y. Lv, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

High Performance β-Ga2O3 vertical Schottky Barrier Diodes

X. Zhou, S. Cai, S. Dun, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

High Performance (001) $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky Barrier Diode

X. Zhou, Z. Feng, S. Cai, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

Zezhao He, S. Cai, Jianchao Guo, 2020 .

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Zezhao He, S. Cai, Jianchao Guo, 2020, Journal of Semiconductors.

Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply

Zezhao He, S. Cai, Jianchao Guo, 2020, Diamond and Related Materials.

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

S. Long, Ming Liu, S. Cai, 2020, IEEE Electron Device Letters.

Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

Y. Hao, Jincheng Zhang, S. Cai, 2020, IEEE Electron Device Letters.

Source-Field-Plated $\beta$ -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

S. Long, Ming Liu, Zezhao He, 2019, IEEE Electron Device Letters.

Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

Qi Liu, Guangwei Xu, S. Cai, 2023, IEEE Transactions on Electron Devices.

Rapid deposition of polycrystalline diamond film by DC arc plasma jet technique and its RF MESFETs

Zezhao He, S. Cai, Zhihong Feng, 2014 .

A distributed model for GaN fish-bone structure HEMTs

Zhifu Hu, Jibin Wu, Yuxing Cui, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

S. Xie, K. J. Chen, Z. Feng, 2010, IEEE Electron Device Letters.

Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD

Xin Li, S. Cai, Z. Feng, 2007 .

Isoelectronic indium-surfactant-doped Al0.3Ga0.7N∕GaN high electron mobility transistors

K. Lau, S. Cai, Zhihong Feng, 2006 .

Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Y. Hao, Jincheng Zhang, Xingchang Fu, 2020 .

Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-Wave AlGaN/GaN HEMTs

Ruimin Xu, Zhifu Hu, Xiaodong Zhao, 2017, IEEE Transactions on Microwave Theory and Techniques.

Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique

Wengang Wu, J. Mo, S. Cai, 2020 .

Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification

K. Lau, S. Cai, Yugang Zhou, 2004 .

High performance InAlN/GaN heterostructure and field effect transistor on sapphire substrate by MOCVD

Z. Feng, S. Cai, T. Han, 2012, Proceedings of 2012 5th Global Symposium on Millimeter-Waves.

10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate

S. Cai, S. Dun, Zhihong Feng, 2012 .

Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)

Z. Feng, C. Yu, Q. B. Liu, 2013 .

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Zezhao He, S. Cai, Chengming Li, 2013, Science China Technological Sciences.

Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

S. Long, Guangwei Xu, S. Cai, 2019, physica status solidi (RRL) – Rapid Research Letters.

Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2

S. Cai, Y. Lv, Zhihong Feng, 2019, Semiconductor Science and Technology.

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Weili Lu, Zezhao He, S. Cai, 2014 .

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Zhaojun Lin, S. Cai, T. Han, 2014 .

High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*

Guodong Gu, Li Wang, Xin Tan, 2015 .

650 mW/mm output power density of H‐terminated polycrystalline diamond MISFET at 10 GHz

S. Cai, Z. He, Jianchao Guo, 2020 .

Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors

S. Cai, Yang Jiang, S. Dun, 2012 .

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

Zezhao He, S. Cai, Jia Li, 2015 .

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

Zezhao He, S. Cai, S. Dun, 2013 .

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Yuanjie Lü, Shaobo Dun, Bo Liu, 2014 .

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

Zezhao He, S. Cai, Jianchao Guo, 2018, Nanoscale advances.

Trap behaviors in AlGaN/GaN based polarization-doped field effect transistors by frequency-dependent conductance–voltage characterizations

S. Cai, Jianchao Guo, Chengming Li, 2015 .

GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz

S. Cai, Y. Lv, Zhihong Feng, 2021, IEEE Electron Device Letters.

High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers

S. Cai, Y. Lv, Zhihong Feng, 2021, IEEE Electron Device Letters.

S-Band 300 W Output SiC MESFET

J. Mo, S. Cai, Jia Li, 2013 .

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

Bo Zhang, Qi Zhou, Zhihong Feng, 2013, IEEE Transactions on Electron Devices.

Comparison of AlGaN/GaN HEMTs grown and fabricated on sapphire substrate with AIN and GaN nucleation layers

S. Cai, G. Gu, Yulong Fang, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

S. Cai, Chengming Li, Y. Lv, 2015 .