G. Signorello

发表

Vertical III-V nanowire device integration on Si(100).

Heike Riel, Mattias Borg, Heinz Schmid, 2014, Nano letters.

Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

H. Riel, G. Signorello, B. Fimland, 2013 .

An open-source platform to study uniaxial stress effects on nanoscale devices.

H. Riel, U. Drechsler, G. Signorello, 2017, The Review of scientific instruments.

Manipulating Surface States of III-V Nanowires with Uniaxial Stress.

M D Rossell, H Schmid, H. Riel, 2017, Nano letters.

Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress

E. Lörtscher, H. Riel, B. Gotsmann, 2014, Nature Communications.

Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain.

H. Riel, B. Gotsmann, S. Karg, 2013, Nano letters.

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors

E. Lörtscher, H. Riel, D. Webb, 2010, Nanotechnology.

Low capacitance HTS junctions for single electron transistors

G. Signorello, T. Bauch, F. Lombardi, 2010 .

Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress

E. Lörtscher, B. Gotsmann, G. Signorello, 2014, Nature Communications.

Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain.

H. Riel, B. Gotsmann, S. Karg, 2013, Nano letters.