W. Kong

Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

Kanin Chu, Dong Xu, P. Chao, 2011, IEEE Transactions on Electron Devices.

Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors

K.H.G. Duh, P. Seekell, Dong Xu, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages

P. Seekell, Dong Xu, P.M. Smith, 2009, IEEE Electron Device Letters.

HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES

P. Chao, P. Smith, Dong Xu, 2009 .

Fully monolithic 4 watt high efficiency Ka-band power amplifier

J.J. Komiak, W. Kong, P.C. Chao, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

Mechanisms of Premature HEMT Breakdown

Wenhua H. Zhu, Wenhua Zhu, L. Gunter, 2007 .

High performance fully selective double recess InAlAs/InGaAs/InP HEMTs

K. C. Hwang, K. Nichols, P. Ho, 2000, IEEE Electron Device Letters.

Advances in InP HEMT technology for high frequency applications

D. Meharry, L. MtPleasant, J. Fisher, 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

Very high efficiency V-band power InP HEMT MMICs

O.S.A. Tang, K. Nichols, W. Kong, 2000, IEEE Electron Device Letters.

Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiency

K. C. Hwang, O.S.A. Tang, P.C. Chao, 2000, IEEE Journal of Solid-State Circuits.

High efficiency monolithic InP HEMT V-band power amplifier

K. Nichols, P. Chao, W. Kong, 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).