H. Karimy

Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

Kanin Chu, Dong Xu, P. Chao, 2011, IEEE Transactions on Electron Devices.

Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors

K.H.G. Duh, P. Seekell, Dong Xu, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES

P. Chao, P. Smith, Dong Xu, 2009 .

Engineered Nanocrystallites for Enhanced Performance of Ceramic Coatings by Ion Beam Assisted Deposition

F. Namavar, H. Karimy, P. Colter, 1996 .

Mechanical and Tribological Properties of Chromium-Nitrogen Films Deposited by Ion Beam Assisted Deposition

F. Namavar, H. Karimy, J. Hirvonen, 1996 .

Low-Temperature (l 100°C) Growth of Ain by Ion Beam Assisted Deposition+

F. Namavar, H. Karimy, P. Colter, 1995 .