H. Saito

Fabrication of Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7 MA/cm2

Yasuyuki Miyamoto, Y. Miyamoto, K. Furuya, 2010 .

Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut

Y. Miyamoto, K. Furuya, S. Ikeda, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source

Yasuyuki Miyamoto, Toru Kanazawa, Kazuya Wakabayashi, 2010 .

High-current-density InP ultrafine devices for high-speed operation

Y. Miyamoto, H. Saito, T. Kanazawa, 2011, 2011 International Conference on Infrared, Millimeter, and Terahertz Waves.

Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET

Y. Miyamoto, K. Furuya, H. Saito, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Vertical InGaAs-MOSFET with hetero-launcher and undoped channel

Y. Miyamoto, K. Furuya, H. Saito, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

3.2 mΩcm2 enhancement-mode GaN MOSFETs with breakdown voltage of 800 V

M. Kuraguchi, Y. Takada, K. Tsuda, 2016 .

Compact modeling of gate leakage phenomenon in GaN HEMTs

K. Teo, S. Rakheja, H. Saito, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown source

Y. Miyamoto, K. Furuya, H. Saito, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain

Y. Miyamoto, K. Furuya, H. Saito, 2009 .