S. Wada
发表
An 0.1-/spl mu/m voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance
S. Wada,
J. Yamazaki,
M. Ishikawa,
1999
.
H. Yamashita,
T. Oda,
S. Wada,
2014,
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
S. Wada,
J. Sakano,
S. Shirakawa,
2010,
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).
S. Wada,
T. Miyoshi,
Toshiomi Shinomiya,
2015,
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
S. Wada,
J. Yamazaki,
M. Ishikawa,
1998,
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).
S. Wada,
J. Sakano,
S. Shirakawa,
2013,
IEEE Transactions on Electron Devices.
H. Hida,
M. Fukaishi,
S. Wada,
1998
.
H. Hida,
M. Fukaishi,
S. Wada,
1995,
Proceedings of International Electron Devices Meeting.
S. Wada,
J. Yamazaki,
M. Ishikawa,
1998
.
Y. Hayashi,
S. Wada,
J. Noguchi,
2013,
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Junichi Sakano,
Takayuki Oshima,
Satoshi Shimamoto,
2011,
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
T. Oda,
S. Wada,
K. Hara,
2017,
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
H. Kawasaki,
S. Wada,
I. Hase,
1999
.
S. Wada,
K. Yanashima,
K. Tasai,
2023,
2023 IEEE/MTT-S International Microwave Symposium - IMS 2023.