K. Hikosaka

发表

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2001 .

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, T. Mimura, S. Hiyamizu, 2002, IEEE Electron Device Letters.

Nanogate InP-HEMT technology for ultrahigh-speed performance

Y. Yamashita, T. Mimura, S. Hiyamizu, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance

I. Watanabe, T. Mimura, K. Shinohara, 2004, IEEE Electron Device Letters.

InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance

Y. Yamashita, T. Mimura, S. Hiyamizu, 2003 .

Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration

T. Mimura, M. Abe, N. Harada, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

Highly uniform N-InAlAs/InGaAs HEMT's on a 3-in InP substrate using photochemical selective dry recess etching

M. Abe, N. Harada, S. Kuroda, 1992, IEEE Electron Device Letters.

High performance optical lithography using a separated light source

K. Hikosaka, S. Asai, I. Hanyu, 1992 .

Ultra-High-Speed Low-Noise InP-HEMT Technology

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

M. Higashiwaki, T. Mimura, K. Shinohara, 2001, IEEE Electron Device Letters.

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006 .

Effect of thermal annealing on 120‐nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors

Y. Yamashita, T. Mimura, S. Hiyamizu, 2005 .

120-nm-T-shaped-Mo∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors

Y. Yamashita, T. Mimura, S. Hiyamizu, 2005 .

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2004 .

Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

Y. Yamashita, T. Mimura, S. Hiyamizu, 2002 .

60 nm gate-length Si/SiGe HEMT

T. Mimura, A. Kasamatsu, K. Kasai, 2004 .

IIA-4 microwave high-power performance of double heterojunction high electron mobility transistor

T. Mimura, M. Abe, K. Hikosaka, 1985, IEEE Transactions on Electron Devices.

Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006 .

Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K

Y. Awano, T. Mimura, S. Hiyamizu, 2010 .

Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations

Y. Awano, T. Mimura, K. Shinohara, 2010 .

Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on Si

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Characterization of epitaxial metal silicide films grown on silicon

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Channeled ion implantation through metallic films

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface

Hiroshi Ishiwara, Kohki Hikosaka, K. Hikosaka, 1981 .

Channeling studies of radiation damage in metal‐silicides

K. Hikosaka, H. Ishiwara, S. Furukawa, 1978 .

Annealing behavior of radiation damages in metal-silicides

K. Hikosaka, H. Ishiwara, S. Furukawa, 1980 .

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

T. Mimura, K. Shinohara, A. Endoh, 2001, IEEE Electron Device Letters.

50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

Y. Yamashita, T. Mimura, A. Endoh, 2002, IEEE Electron Device Letters.

Microwave power double-heterojunction HEMT's

Y. Hirachi, M. Abe, K. Hikosaka, 1986, IEEE Transactions on Electron Devices.

High Electron Mobility Transistor Logic

Masayuki Abe, K. Joshin, Kohki Hikosaka, 1981 .

High f/sub T/ 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

Y. Yamashita, T. Mimura, S. Hiyamizu, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Selective Dry Etching of AlGaAs-GaAs Heterojunction

K. Joshin, Kohki Hikosaka, Takashi Mimura, 1981 .

Enhancement-Mode High Electron Mobility Transistors for Logic Applications

T. Mimura, S. Hiyamizu, K. Hikosaka, 1981 .

A multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Y. Awano, N. Yokoyama, N. Harada, 2000, IEEE Journal of Solid-State Circuits.

High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

Y. Yamashita, T. Mimura, S. Hiyamizu, 2000 .

InP HEMTs: physics, applications, and future

Y. Yamashita, T. Mimura, S. Hiyamizu, 2003, 61st Device Research Conference. Conference Digest (Cat. No.03TH8663).

Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Fabrication technology and device performance of sub-50-nm-gate InP-based HEMTs

M. Higashiwaki, Toshiaki Matsui, Akira Endoh, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

Y. Yamashita, T. Mimura, S. Hiyamizu, 2000 .

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2001 .

A 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Naoki Yokoyama, Kohki Hikosaka, 1999 .