T. Ishii

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2002 .

C60-incorporated nanocomposite resist system for practical nanometer pattern fabrication

Toshiaki Tamamura, H. Nozawa, T. Tamamura, 1997 .

Fullerene-Incorporated Nanocomposite Resist System for Nanolithograpy

T. Tamamura, E. Kuramochi, T. Ishii, 1999 .

Fabrication of Nanometer-Order Dot Patterns by Lift-off Using a Fullerene-Incorporated Bilayer Resist System

T. Tamamura, E. Kuramochi, T. Ishii, 1998, Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135).

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance

T. Tamamura, J. Osaka, T. Suemitsu, 1999, IEEE Electron Device Letters.

Fullerene Nanocomposite Resists for Nanolithography

T. Ishii, K. Shigehara, 2009 .

Application of x-ray mask fabrication technologies to high resolution, large diameter Ta Fresnel zone plates

T. Tamamura, T. Ishii, A. Ozawa, 1997 .

Superficial image emphasis lithography

T. Ishii, T. Matsuda, K. Harada, 1985 .

Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

T. Tamamura, T. Suemitsu, Y. Umeda, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Y. Umeda, T. Suemitsu, T. Enoki, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Nanocomposite resist system

T. Tamamura, T. Ishii, H. Nozawa, 1997 .

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

Tetsuya Suemitsu, Toshiaki Tamamura, Takatomo Enoki, 1999 .

Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs

Tetsuya Suemitsu, Yasunobu Ishii, Tetsuyoshi Ishii, 2001 .