N. Harff
发表
W. Hafez,
M. Feng,
W. Snodgrass,
2006,
2006 International Electron Devices Meeting.
S. J. Allen,
M. Shur,
P. Burke,
2002
.
J.F. Prairie,
R.B. Elder,
D.S. Jansen,
2004,
IEEE Electron Device Letters.
B. Gilbert,
E. Daniel,
N. Harff,
2005,
International Conference on Indium Phosphide and Related Materials, 2005.
John L. Reno,
N. E. Harff,
Jerry A. Simmons,
2002
.
P. Marshall,
B. Gilbert,
B. Brar,
2006,
2006 IEEE Radiation Effects Data Workshop.
S. K. Lyo,
J. Simmons,
N. Harff,
1997
.
J. Simmons,
N. Harff,
Sungkwun K. Lyo,
1998
.
S. K. Lyo,
K. West,
L. Pfeiffer,
1997
.
B. E. Hammons,
H. Chui,
J. Simmons,
1996
.
S. K. Lyo,
K. West,
L. Pfeiffer,
1998
.
S. K. Lyo,
N. Harff,
M. Blount,
1998,
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.
S. K. Lyo,
K. West,
L. Pfeiffer,
1997
.
J. Klem,
J. Simmons,
N. Harff,
1996
.
S. K. Lyo,
T. Eiles,
J. Klem,
1995
.
S. K. Lyo,
T. Eiles,
J. Klem,
1995
.
Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
H. Chui,
J. Simmons,
N. Harff,
1996
.
S. K. Lyo,
J. Klem,
S. Goodnick,
1994
.
S. J. Allen,
M. Shur,
P. Burke,
2002
.
Erik S. Daniel,
James N. Kruchowski,
Vladimir Sokolov,
2023,
2301.10169.
Simmons,
Klem,
N. Harff,
1994,
Physical review letters.