Martin McCallum

发表

Electrical Dimension Characterization of Binary and Alternating Aperture Phase-Shifting Masks

Martin McCallum, Stewart Smith, Alan Lissimore, 2002, Photomask Technology.

Immersion and 32nm lithography: now and future

Martin McCallum, Masaomi Kameyama, 2007, International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT).

High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks

Martin McCallum, John S. Petersen, Nishrin Kachwala, 2000, Advanced Lithography.

Cost-effective overlay and CD metrology on phase-shifting masks

Martin McCallum, Stewart Smith, Anthony J. Walton, 2004, SPIE Photomask Technology.

Alternating PSM mask performance: a study of multiple fabrication technique results

Martin McCallum, Patricia Gabella, Gilbert V. Shelden, 2001, SPIE Advanced Lithography.

Extension of photolithography

Martin McCallum, Masaomi Kameyama, 2004, Photomask Japan.

Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography

Martin McCallum, John S. Petersen, J. Fung Chen, 1998, Photomask and Next Generation Lithography Mask Technology.

Effect of aberrations on defect printing and inspection

Martin McCallum, Paul D. Harris, 2002, SPIE Advanced Lithography.

Manufacturability of subwavelength features using reticle and substrate enhancements

Martin McCallum, John G. Maltabes, Kevin D. Lucas, 1998, Advanced Lithography.

Current status of water immersion lithography and prospect of higher index method

Martin McCallum, Yasuhiro Ohmura, Katsushi Nakano, 2007, European Mask and Lithography Conference.

Device based evaluation of electron projection lithography

Tadahiko Takikawa, Martin McCallum, Hiroshi Fujita, 2005, SPIE Advanced Lithography.

Wavelength-dependent mask defect inspection and printing

Martin McCallum, 2002, SPIE Photomask Technology.

193-nm lithography: new challenges, new worries

Martin McCallum, Wolf-Dieter Domke, David R. Stark, 1999, Other Conferences.

Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resist

Martin McCallum, John S. Petersen, Nishrin Kachwala, 1999, Advanced Lithography.

Mask topography effects in low k1 lithography

Martin McCallum, Ronald L. Gordon, 2000, Advanced Lithography.

Some lithographic limits of back end lithography

Martin McCallum, 2001, Microelectronic and MEMS Technologies.

Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Richard A. Di Pietro, Donald C. Hofer, Martin McCallum, 1998, Advanced Lithography.

Practical DUV lithography for the optoelectronics market

Martin McCallum, Gordon Hughes, Paul D. Harris, 2003, SPIE Advanced Lithography.

Study of obscuration in catadioptric lenses

Bruce W. Smith, Martin McCallum, Julian S. Cashmore, 2001, SPIE Advanced Lithography.

Advanced photomask characterisation for microlithography

Martin McCallum, M. Mccallum, 2006 .

Determining mask effects in low k1 lithography

Martin McCallum, Ron Gordon, 2000 .

Optical extension at the 193-nm wavelength

Bruce W. Smith, Martin McCallum, Gilles R. Amblard, 1999, Advanced Lithography.

Deducing aerial image behavior from AIMS data

Martin McCallum, Donis G. Flagello, Ronald L. Gordon, 2000, Advanced Lithography.

Development of an incremental structural parameter model for predicting reactive ion etch rates of 193-nm photoresist polymer platforms

Richard A. Di Pietro, Donald C. Hofer, Martin McCallum, 1999, Advanced Lithography.

Electrical test structures for the characterisation of optical proximity correction

Martin McCallum, Stewart Smith, Anthony J. Walton, 2007, European Mask and Lithography Conference.

Assessment of a hypothetical road map that extends optical lithography through the 70-nm technology node

Ronald L. Gordon, Bruce W. Smith, Martin McCallum, 1999, Other Conferences.

Design, reticle, and wafer OPC manufacturability for the 0.18-μm lithography generation

Martin McCallum, Kevin D. Lucas, Robert K. Henderson, 1999, Advanced Lithography.

193-nm single-layer process for 150-nm technology generation and below

Martin McCallum, Jeff D. Byers, Gilles R. Amblard, 1999, Advanced Lithography.

Optical inspection of EPL stencil masks

Martin McCallum, Masashi Okada, James Welsh, 2003, SPIE Advanced Lithography.

Benchmarking of available rigorous electromagnetic field (EMF) simulators for phase-shift mask applications

Martin McCallum, Christian K. Kalus, Andreas Erdmann, 2001 .

Impact of illumination source symmetrization in OPC

John L. Sturtevant, Martin McCallum, Stephen P. Renwick, 2008, Photomask Japan.

CD control for two-dimensional features in future technology nodes

Martin McCallum, Staf Verhaegen, Kurt G. Ronse, 2001, SPIE Advanced Lithography.

Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Ronald L. Gordon, Bruce W. Smith, Martin McCallum, 1998, Photomask Technology.

Impact of CD and overlay errors on double-patterning processes

Martin McCallum, Isabelle Servin, Nobutaka Magome, 2009, Advanced Lithography.

Compensation for imaging errors in EUV lithography

Martin McCallum, Paul Harris, 2004, SPIE Advanced Lithography.

Double patterning requirements for optical lithography and prospects for optical extension without double patterning

Jun Ishikawa, Martin McCallum, Shinji Wakamoto, 2008, SPIE Advanced Lithography.

Evolution of wavelength shrinkage in lithography

Martin McCallum, Masaomi Kameyama, Soichi Owa, 2009, International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT).

Imaging contrast improvement for 160nm line features using sub resolution assist features with binary, 6% ternary attenuated phase shift mask with process tuned resist

Martin McCallum, John S. Petersen, Nishrin Kachwala, 1999 .