M. Saitoh

发表

Systematic analysis of electron energy-loss near-edge structures in Li-ion battery materials.

A. Kuwabara, C. Fisher, Y. Ikuhara, 2018, Physical chemistry chemical physics : PCCP.

1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs

M. Terai, S. Fujieda, T. Tatsumi, 2005 .

First principles calculation of dopant solution energy in HfO2 polymorphs

Y. Ikuhara, T. Mizoguchi, M. Saitoh, 2012 .

Microscopic characterization of the C–F bonds in fluorine–graphite intercalation compounds

A. Kuwabara, Y. Ukyo, Kazuhiko Matsumoto, 2020, Journal of Power Sources.

High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO2 underlayer

T. Tatsumi, Heiji Watanabe, M. Saitoh, 2004 .

Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

M. Miyamura, M. Saitoh, N. Ikarashi, 2008 .

First-principles calculation of oxygen K-electron energy loss near edge structure of HfO2

Y. Ikuhara, T. Mizoguchi, M. Saitoh, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

In-situ electron holography of carrier accumulation at SiO2/InGaZnO4 interface

M. Saitoh, H. Takeda, N. Ikarashi, 2014 .

Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Koichi Ando, Shinji Fujieda, Yoshinao Miura, 2003 .

Low-power embedded ReRAM technology for IoT applications

K. Takeda, H. Sunamura, N. Furutake, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs

M. Terai, S. Kotsuji, S. Fujieda, 2004 .

Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

M. Terai, S. Kotsuji, S. Fujieda, 2005 .