T. Spila

发表

Improving high-capacity Li1.2Ni0.15Mn0.55Co0.1O2-based lithium-ion cells by modifiying the positive electrode with alumina

Richard T. Haasch, Martin Bettge, Daniel P. Abraham, 2013 .

Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties

I. Petrov, D. Gall, M. Odén, 2002 .

Improving high-capacity Li 1 . 2 Ni 0 . 15 Mn 0 . 55 Co 0 . 1 O 2-based lithium-ion cells by modi fi ying the positive electrode with alumina

I. Petrov, R. Haasch, M. Bettge, 2013 .

Cycling Behavior of NCM523/Graphite Lithium-Ion Cells in the 3–4.4 V Range: Diagnostic Studies of Full Cells and Harvested Electrodes

Daniel P. Abraham, Bryant J. Polzin, Dean J. Miller, 2017 .

Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy

D. Muller, S. Datta, N. Shukla, 2015 .

Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

Sungduk Hong, E. Yoon, Y. Foo, 2003 .

Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6

J. Abelson, T. Spila, J. Greene, 1996 .

Synergetic role of Li(+) during Mg electrodeposition/dissolution in borohydride diglyme electrolyte solution: voltammetric stripping behaviors on a Pt microelectrode indicative of Mg-Li alloying and facilitated dissolution.

Jinho Chang, R. Nuzzo, P. Braun, 2015, ACS applied materials & interfaces.

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

J. Abelson, T. Spila, J. Greene, 1997 .

Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption

J. Abelson, T. Spila, J. Greene, 1997 .

Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness

H. Seo, R. Haasch, Y. Foo, 2005 .

Hybrid surface roughening modes during low-temperature heteroepitaxy : Growth of fully-strained metastable Ge 1 2 x Sn x alloys on Ge „ 001 ... 2 3 1

T. Spila, P. Desjardins, J. Greene, 1999 .

Si(113) hydrogen desorption kinetics: A temperature programmed desorption study

T. Spila, J. Greene, H. Kim, 2001 .

Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

Y. Foo, T. Spila, P. Desjardins, 2003 .

Ultrahigh B doping ({<=}10{sup 22} cm{sup -3}) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

T. Spila, P. Desjardins, J. Greene, 2000 .

Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1−xGex/Si(001) growth from hydride precursors

T. Spila, P. Desjardins, R. Twesten, 2003 .

Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)

D. Cahill, T. Spila, P. Desjardins, 2002 .

Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

D. Cahill, T. Spila, P. Desjardins, 2011 .

Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

T. Spila, P. Desjardins, J. Eades, 1999 .

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

T. Spila, Sungduk Hong, Ivan Petrov, 2008 .

Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge{sub 1-x}Sn{sub x} alloys on Ge(001)2x1

T. Spila, P. Desjardins, J. Greene, 1999 .

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

D. Gall, T. Spila, J. M. Purswani, 2006 .

Evidence of Transition-Metal Accumulation on Aged Graphite Anodes by SIMS

Daniel P. Abraham, T. Spila, D. Abraham, 2008 .

Real-time control of AlN incorporation in epitaxial Hf1 − xAlxN using high-flux, low-energy (10–40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target

I. Petrov, L. Hultman, T. Spila, 2011 .

B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6

T. Bramblett, J. Abelson, T. Spila, 1997 .

Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

I. Robinson, T. Spila, J. Greene, 1998 .

Controllable doping and wrap-around contacts to electrolessly etched silicon nanowire arrays

P. Ferreira, S. Sinha, T. Spila, 2014, Nanotechnology.

Characterization of collector optic material samples exposed to a discharge-produced plasma extreme ultraviolet light source

D. A. Alman, E. Antonsen, T. Spila, 2007 .

Epitaxial growth of VO2 by periodic annealing

T. Spila, J. Schubert, J. H. Lee, 2013, 1310.5021.

Atom probe tomography

D. Seidman, T. Spila, W. Swiech, 2021, Nature Reviews Methods Primers.

Coherent diffraction patterns of individual dislocation strain fields

I. Robinson, T. Spila, J. Greene, 2005 .

Direct measurements of strain depth profiles in Ge/Si(001) nanostructures

Sungduk Hong, Y. Foo, T. Spila, 2003 .

Controllable doping and wrap-around contacts to electrolessly etched silicon nanowire arrays

P. Ferreira, S. Sinha, T. Spila, 2014, Nanotechnology.