M. Twigg

发表

Review of LiFePO4 Phase Transition Mechanisms and New Observations from X-ray Absorption Spectroscopy

C. Love, K. Swider-Lyons, A. Korovina, 2013 .

Analysis of strain compensated GaAs-based InAs QD solar cells

David V. Forbes, Seth M. Hubbard, Robert J. Walters, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si1−xGex on Si substrates

P. Thompson, M. Twigg, M. Fatemi, 1998 .

Wurtzite III–Nitride Distributed Bragg Reflectors on Si(100) Substrates

Jr., C. Eddy, M. Twigg, 2006, 2009.01198.

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

C. Eddy, D. Gaskill, M. Twigg, 2005, 2009.01635.

Dislocation blocking in elastically anisotropic semiconductor thin films

M. Twigg, G. Jernigan, 2021, Journal of Applied Physics.

A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth

C. Eddy, M. Twigg, R. Henry, 2004 .

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

S. Binari, A. Wickenden, M. Twigg, 2001 .

Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire

A. Wickenden, M. Twigg, D. Koleske, 1999 .

Unique properties of molecular beam epitaxy silicon on sapphire using in situ high-temperature substrate annealing compared with chemically vapor deposited silicon on sapphire

M. Twigg, S. Qadri, J. Pellegrino, 1990 .

Molecular beam epitaxy versus chemical vapor deposition of silicon on sapphire

M. Twigg, S. Qadri, J. Pellegrino, 1990 .

Improved GaN materials and devices through confined epitaxy

M. Peckerar, Y. Ngu, F. Perkins, 2007 .

Properties of Si-doped GaN films grown using multiple AlN interlayers

J. Freitas, A. Wickenden, M. Twigg, 1999 .

Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

S. Messenger, R. Walters, M. Twigg, 2008, IEEE Transactions on Nuclear Science.

DNA Templating of Ethylene-Oxide-Coated Nanoclusters

M. Ancona, D. Lowy, E. Goldman, 2002 .

Assessing Hexagonal Boron Nitride Crystal Quality by Defect Sensitive Etching

M. Twigg, N. Bassim, J. Edgar, 2017, Microscopy and Microanalysis.

Defect sensitive etching of hexagonal boron nitride single crystals

Yichao Zhang, M. Twigg, N. Bassim, 2017 .

Initiating polarity inversion in GaN growth using an AlN interlayer

C. Eddy, M. Twigg, F. Kub, 2011 .

Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

C. Eddy, M. Twigg, R. Henry, 2005 .

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

W. J. Moore, J. Freitas, A. Wickenden, 2000 .

Fabrication of Bond and Etch Back Silicon on Insulator Using SiGe-MBE and Selective Etching Techniques

H. Hughes, K. Hobart, M. Twigg, 1991 .

A Si0.7Ge0.3 strained‐layer etch stop for the generation of thin layer undoped silicon

H. Hughes, M. Twigg, F. Kub, 1990 .

A Si/sub 0.7/Ge/sub 0.3/ strained layer etch stop for the generation of bond and etch back SOI

H. Hughes, M. Twigg, F. Kub, 1989, IEEE SOS/SOI Technology Conference.

Competition Between Thiol and Phosphine Ligands During the Synthesis of Au Nanoclusters

M. Ancona, A. Snow, M. Twigg, 2008 .

Ion-beam deposition of Zr−Al multilayers and their structural properties

M. Twigg, S. Qadri, Chul-Soo Kim, 1992 .

Growth of crystalline Al2O3 via thermal atomic layer deposition: Nanomaterial phase stabilization

M. Twigg, S. Prokes, M. Katz, 2014 .

Structure and composition of Ba0.5Sr0.5TiO3 films deposited on (001) MgO substrates and the influence of sputtering pressure

S. W. Kirchoefer, M. Twigg, L. B. Alldredge, 2013 .

The Use of AlN Interlayers to Improve GaN Growth on A-Plane Sapphire

J. Freitas, A. Wickenden, M. Twigg, 1999 .

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

C. Eddy, M. Twigg, J. Caldwell, 2009 .

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Interfacial point defects in heavily implanted silicon germanium alloys

W. Carlos, M. Twigg, R. Stahlbush, 1992 .

Composition and morphology of SiGe alloys grown on Si(1 0 0) using an Sb surfactant

P. Thompson, M. Twigg, M. Fatemi, 2000 .

Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H‐SiC mesas

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Elimination of Microtwins in Mbe-Grown Silicon on Sapphire

M. Twigg, J. Pellegrino, E. Richmond, 1988 .

Ultrathin PtSi layers patterned by scanned probe lithography

E. Snow, P. Campbell, F. Perkins, 2001 .

Thiol-Terminated Di-, Tri-, and Tetraethylene Oxide Functionalized Gold Nanoparticles: A Water-Soluble, Charge-Neutral Cluster

M. Ancona, A. Snow, M. Twigg, 2002 .

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

C. Eddy, M. Twigg, R. Henry, 2006 .

Formation and stability of crystalline and amorphous Al2O3 layers deposited on Ga2O3 nanowires by atomic layer epitaxy

M. Twigg, S. Prokes, M. Katz, 2016 .

Characterization of low range GaAs

M. Frankel, D. Katzer, M. Twigg, 1995 .

Selective Removal of Si1 − x Ge x from (100) Si Using HNO 3 and HF

K. Hobart, M. Twigg, D. Godbey, 1992 .

Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop

H. Hughes, M. Twigg, L. Palkuti, 1990 .

A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly.

Igor L. Medintz, H. Mattoussi, A. R. Clapp, 2004, Proceedings of the National Academy of Sciences of the United States of America.

The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers

P. Thompson, M. Twigg, J. Bennett, 2002 .

Sputtering synthesis and properties of molybdenum nanocrystals and Al/Mo layered nanocomposites

T. Schlesinger, M. Twigg, G. Chow, 1991 .

Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Simulation and analysis of electron channeling contrast images of threading screw dislocations in 4H-SiC

M. Twigg, Y. Picard, 2009 .

Diffraction contrast and Bragg reflection determination in forescattered electron channeling contrast images of threading screw dislocations in 4H-SiC

M. Twigg, Y. Picard, 2008 .

Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

C. Eddy, M. Twigg, R. Henry, 2006, 2009.01207.

Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Chemical precipitation and properties of nanocrystalline FeCu alloy and composite powders

T. Ambrose, M. Twigg, J. Xiao, 1992 .

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Daniel D. Koleske, Mark E. Twigg, A. Wickenden, 2002 .

Interface composition control in InAs/GaSb superlattices

B. V. Shanabrook, B. R. Bennett, M. Twigg, 1994 .

Increasing efficiency of photoelectronic conversion by encapsulation of photosynthetic reaction center proteins in arrayed carbon nanotube electrode.

Jin Ho Kim, Jimmy Xu, Nikolai Lebedev, 2008, Langmuir : the ACS journal of surfaces and colloids.

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

B. R. Bennett, C. Palmstrøm, M. Twigg, 2015 .

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

P. Neudeck, C. Eddy, M. Twigg, 2010 .

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

M. Twigg, R. Stahlbush, Y. Picard, 2008 .

Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

S. Saddow, C. Frewin, C. Locke, 2008 .

Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H-SiC epitaxial layers

M. Skowronski, M. Twigg, R. Stahlbush, 2008 .

Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers

L. A. Koszi, Mark E. Twigg, A. K. Chin, 1988 .

Planar defects in 4H-SiC PiN diodes

T. Chow, J. Sumakeris, M. Twigg, 2005 .

Relative lattice parameter measurement of submicron quaternary (InGaAsP) device structures grown on InP substrates

D. Joy, S. Chu, M. Twigg, 1987 .

Relative Lattice Parameter Measurement in Quaternary (InGaAsP) Layers on InP Substrates Using Convergent Beam Electron Diffraction

D. Joy, S. Chu, S. Nakahara, 1986 .

Distribution of Ge in O+ implanted silicon

M. Twigg, R. Stahlbush, M. Zvanut, 1992 .

Diode structures from amorphous low-temperature GaAs

D. Simons, M. Twigg, B. Tadayon, 1993 .

Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy

P. Thompson, M. Twigg, G. Jernigan, 2002 .

Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

J. Fastenau, D. Lubyshev, M. Twigg, 2020 .

Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

P. Thompson, D. Simons, M. Twigg, 1998 .

Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase

M. Twigg, M. Fatemi, O. Glembocki, 1993 .

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

Daniel D. Koleske, Mark E. Twigg, Alma Wickenden, 2001 .

Enhanced GaN decomposition in H2 near atmospheric pressures

A. Wickenden, M. Twigg, D. Koleske, 1998 .

Structural and magnetic properties of Al/Fe multilayers deposited by ion beam sputtering

M. Twigg, S. Qadri, M. Harford, 1991 .

Accurate determination of effective quantum well thickness: Infrared absorption by transverse-optical phonons

W. J. Moore, B. V. Shanabrook, R. Wagner, 1992 .

Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures

Brian R. Bennett, Mark E. Twigg, B. V. Shanabrook, 1999 .

Growth of high quality, epitaxial InSb nanowires

Yong Ding, Sharka M. Prokes, Mark E. Twigg, 2007 .

MBE-grown germanium on sapphire ?

M. Twigg, S. Qadri, E. Richmond, 1990 .

Single‐crystal germanium grown on (11̄02) sapphire by molecular beam epitaxy

M. Twigg, S. Qadri, E. Richmond, 1989 .

Limitations to the use of Sb as a Surfactant During SiGe MBE

P. Thompson, M. Twigg, M. Fatemi, 1998 .

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications.

A. Kozen, M. Twigg, S. Prokes, 2020, ACS applied materials & interfaces.

The growth and characterization of Si1 − xGex multiple quantum wells on Si(110) and Si(111)

T. L. Kreifels, P. Thompson, K. Hobart, 1995 .

Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates

J. Freitas, A. Wickenden, M. Twigg, 1998 .

Epitaxial Si-based tunnel diodes

Mark E. Twigg, P. Thompson, K. Hobart, 2000 .

Resistivity control in unintentionally doped GaN films grown by MOCVD

Daniel D. Koleske, Mark E. Twigg, A. Wickenden, 2004 .

Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3−SnO2 Heterostructures for Gas Sensing Applications

Jaime A. Freitas, F. Keith Perkins, Sharka M. Prokes, 2009 .

Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Paul R. Berger, T. Dillon, A. Seabaugh, 1999 .

Low‐temperature cleaning processes for Si molecular beam epitaxy

D. J. Godbey, Phillip E. Thompson, Karl D. Hobart, 1993 .

Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

P. Thompson, K. Hobart, D. Simons, 1995 .

Morphological instability in InAs/GaSb heterostructures

B. R. Bennett, R. Magno, M. Twigg, 1998 .

The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

P. Thompson, D. Simons, M. Twigg, 1998 .

Growth of low-dimensional structures on nonplanar patterned substrates

Fritz J. Kub, Phillip E. Thompson, Karl D. Hobart, 1995 .

Nanoscale Features Grown by MBE on Nonplanar Patterned Si Substrates

P. Thompson, K. Hobart, M. Twigg, 1995 .

Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

K. Hobart, M. Twigg, R. Stahlbush, 2007 .

Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation

Walter Kruppa, Brian R. Bennett, Robert Bass, 1999 .

Changes in morphology using atomic hydrogen during Si/Si1−xGex molecular beam epitaxy growth on Si (100)

P. Thompson, M. Twigg, G. Jernigan, 1998 .

Relief of compressive biaxial strains in thin films via microtwins

M. Twigg, J. Pellegrino, E. Richmond, 1990 .

Interfacial disorder in InAs/GaSb superlattices

B. V. Shanabrook, B. R. Bennett, M. Twigg, 1998 .

Origins of interfacial disorder in GaSb/InAs superlattices

Brian R. Bennett, Mark E. Twigg, Paul Thibado, 1995 .

Development of periodically oriented gallium nitride for non-linear optics [Invited]

Jaime A. Freitas, Jerry R. Meyer, Steven R. Bowman, 2012 .

Transmission electron microscopy analysis of reduction reactions and phase transformations in Nb2O5 films deposited by atomic layer deposition

A. Kozen, M. Twigg, S. Prokes, 2021, Journal of Applied Physics.

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

S. Arthur, M. Twigg, R. Stahlbush, 2003 .

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

P. Neudeck, K. Hobart, C. Eddy, 2006 .

Extended Defects in 4H-SiC PiN Diodes

S. Arthur, M. Twigg, R. Stahlbush, 2002 .

Mechanisms of Stacking Fault Growth in SiC PiN Diodes

P. Losee, J. Sumakeris, M. Twigg, 2004 .

Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy

B. R. Bennett, R. Magno, M. Twigg, 2014 .

Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes

Orest J. Glembocki, Fritz J. Kub, Karl D. Hobart, 2006 .

Synthesis and Characterization of Water Soluble Gold Nanoclusters of Varied Core Size

A. Snow, M. Twigg, E. Foos, 2002 .

Si-assisted growth of InAs nanowires

H. D. Park, M. Twigg, S. Prokes, 2006 .

Epitaxial graphene nucleation on C-face silicon carbide.

R. Myers-Ward, C. Eddy, D. Gaskill, 2011, Nano letters.

The crystallography and defect chemistry of structural faults in lithium niobate

R. J. Holmes, D. Eaglesham, M. Twigg, 1988 .

Study of structural faults in Ti‐diffused lithium niobate

T. T. Sheng, R. J. Holmes, M. Twigg, 1987 .

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

P. Neudeck, C. Eddy, M. Twigg, 2005 .

GaN vertical and lateral polarity heterostructures on GaN substrates

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2011 .

Partial dislocations and stacking faults in 4H-SiC PiN diodes

S. Arthur, M. Twigg, R. Stahlbush, 2004 .

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2006 .

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

P. Neudeck, C. Eddy, M. Twigg, 2004 .

Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

S. Binari, A. Wickenden, M. Twigg, 2002 .

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

S. Saddow, M. Twigg, D. Turover, 2005 .

Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

A. Wickenden, M. Twigg, D. Koleske, 2002 .

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

P. Neudeck, C. Eddy, M. Twigg, 2006 .

A Transmission Electron Microscopy Investigation of GaN grown on Patterned, Step-Free 4H-SiC Mesas

P. Neudeck, C. Eddy, M. Twigg, 2005, 2005 International Semiconductor Device Research Symposium.

Technique for site-specific plan-view transmission electron microscopy of nanostructural electronic devices

M. Twigg, N. Bassim, 2005 .

Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2003 .

The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

Daniel D. Koleske, Mark E. Twigg, James C. Culbertson, 1999 .

Lattice walks by long jumps

Mark E. Twigg, G. Ehrlich, M. Twigg, 1990 .

Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

Fritz J. Kub, Phillip E. Thompson, Karl D. Hobart, 2000 .

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

T. Chow, P. Losee, J. Sumakeris, 2004 .

In-Situ X-ray Absorption Spectroscopy Analysis of Capacity Fade in Nanoscale-LiCoO2

Karen E. Swider-Lyons, Corey T. Love, Mark E. Twigg, 2013 .

The study of relaxation in asymmetrically strained Si1−xGexSi superlattices

Kang L. Wang, M. Twigg, S. Prokes, 1991 .

Characterization of thin boron‐doped silicon membranes by double‐crystal x‐ray topography

Martin C. Peckerar, Syed B. Qadri, David I. Ma, 1989 .

Investigation of three-step epilayer growth approach of GaN films to minimize compensation

C. Eddy, M. Twigg, R. Henry, 2003 .

Chapter 10 – Structural defects in nitride heteroepitaxy

A. Wickenden, M. Twigg, D. Koleske, 2000 .

SiGeSn buffer layer for the growth of GeSn films

M. Twigg, G. Jernigan, N. Mahadik, 2023, Journal of Applied Physics.

Enhanced GaN Decomposition at Movpe Pressures

A. Wickenden, M. Twigg, D. Koleske, 1999 .

Self‐assembled InSb and GaSb quantum dots on GaAs(001)

B. V. Shanabrook, B. R. Bennett, R. Magno, 1996 .

Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications

William W. Bewley, Jerry R. Meyer, Walter Kruppa, 1999, Optics & Photonics.

Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas

P. Neudeck, M. Skowronski, C. Eddy, 2006 .

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

T. Chow, P. Losee, M. Twigg, 2006 .

Experimental study of plasmonically enhanced GaN nanowire light emitters

J. Freitas, C. Eddy, M. Twigg, 2008 .

The microstructure of GaN nucleation layers grown by MOCVD on (11 2 0) sapphire versus pressure and temperature

T. Wojtowicz, P. Ruterana, A. Wickenden, 2003 .

Effect of growth temperature on the microstructure of the nucleation layers of GaN grown by MOCVD on (11 2 0) sapphire

T. Wojtowicz, P. Ruterana, A. Wickenden, 2002 .

Microstructure of GaN Grown on (11 2 0) Sapphire

P. Ruterana, A. Wickenden, M. Twigg, 2000 .

Fabrication of SOI substrates with ultra-thin Si layers

P. Thompson, K. Hobart, M. Twigg, 1998 .

Molecular Beam Epitaxy of Wide-Bandgap InAlAsSb on InP Substrates for an All Lattice-Matched Triple-Junction Solar Cell

M. González, R. Walters, I. Vurgaftman, 2019, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).

Line tension of extended double kinks in thin films

M. Twigg, 1990 .

Thermal stress‐induced, high‐strain fragmentation of buried SiGe layers grown on Si

P. Thompson, M. Twigg, M. Fatemi, 1995 .

Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers

M. Twigg, C. Affouda, N. Mahadik, 2016, Journal of Electronic Materials.

P. Thompson, W. Carlos, M. Twigg, 1995 .

III-Nitride crystal growth from nitride-salt solution

Mark E. Twigg, R. M. Frazier, M. Twigg, 2007 .

THE EFFECT OF BREMSSTRAHLUNG‐PRODUCED FLUORESCENCE ON X‐RAY MICROANALYSIS IN THE ANALYTICAL TRANSMISSION ELECTRON MICROSCOPE

M. Twigg, 1984 .

Lattice parameter measurement of sub-micron device structures in compound semiconductors via convergent-beam electron diffraction

D. Joy, S. Chu, M. Twigg, 1987 .

Microtwin morphology and volume fraction for silicon on sapphire

M. Twigg, E. Richmond, 1988 .

Growth and characterization of III-N bulk crystals

R. M. Frazier, M. Twigg, J. A. Freitas, 2008 .

Ga vacancies and grain boundaries in GaN

A. Wickenden, M. Twigg, D. Koleske, 2003 .

Evolution of GaSb epitaxy on GaAs(001)‐c(4×4)

Brian R. Bennett, Mark E. Twigg, Paul Thibado, 1996 .

Solid-phase regrowth of amorphous GaAs grown by low-temperature molecular-beam epitaxy

M. Twigg, M. Fatemi, B. Tadayon, 1993 .