Kazunobu Tanaka

发表

Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

S. Yamasaki, H. Okushi, A. Matsuda, 1980 .

Electrical properties of n-amorphous/p-crystalline silicon heterojunctions

Hideyo Okushi, Hideharu Matsuura, H. Okushi, 1984 .

Plasma spectroscopy control and analysis of a-Si:H deposition

S. Yamasaki, H. Okushi, A. Matsuda, 1980 .

In Situ EXAFS Study of the Photoexcited State and Defects in Chalcogenide Glasses

A. Kolobov, Kazunobu Tanaka, H. Oyanagi, 1999 .

Light-Induced Anisotropy in Amorphous Chalcogenides

Kazunobu Tanaka, 1997, Science.

Dispersive photoluminescence decay of a-Si:H

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1983 .

Electron paramagnetic resonance of a single-crystal surface: the Si(111)-7×7 surface and its oxidation process

T. Umeda, S. Yamasaki, T. Yasuda, 2001 .

Energy location of light-induced ESR centers in undoped a-Si:H

T. Umeda, S. Yamasaki, J. Isoya, 1998 .

Microscopic nature of localized states in a-Si:H and their role in metastability

T. Umeda, S. Yamasaki, J. Isoya, 1998 .

Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source

T. Yasuda, Kazunobu Tanaka, T. Yao, 1998 .

Raman and X-ray absorption study of selenium incorporated into the channels of mordenite : Dependence on the ion exchange and the method of incorporation

A. Kolobov, Kazunobu Tanaka, S. Romanov, 1998 .

Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous silicon☆

A. Matsuda, Kazunobu Tanaka, 1982 .

Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H

S. Yamasaki, H. Okushi, N. Hata, 1983 .

Guiding principle for preparing highly photosensitive Si-based amorphous alloys

A. Matsuda, Kazunobu Tanaka, 1987 .

31P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1987 .

Proton nuclear magnetic resonance study on hydrogen incorporation in amorphous‐microcrystalline mixed‐phase hydrogenated silicon

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1984 .

NMR study of c-Si:H

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1983 .

The dynamics of photoexcited carriers in microcrystalline silicon

S. Namba, Y. Aoyagi, Y. Segawa, 1984 .

Interpretation of 29Si nuclear magnetic resonance spectra of amorphous hydrogenated silicon

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1986 .

Glow-discharge amorphous silicon: Growth process and structure

A. Matsuda, Kazunobu Tanaka, 1987 .

Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge Plasma

Y. Imanishi, A. Matsuda, Kazunobu Tanaka, 1986 .

Effects of Chemical Composition and Morphology of Substrate Surfaces on Crystallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films

S. Yamasaki, T. Yasuda, Kazunobu Tanaka, 2000 .

Real‐time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

A. Matsuda, Kazunobu Tanaka, K. Arai, 1990 .

The role of argon involved in plasma-deposited amorphous Si:H films

S. Yamasaki, H. Okushi, A. Matsuda, 1980 .

Existence of surface region with high dangling bond density during a-Si:H film growth

T. Umeda, S. Yamasaki, J. Isoya, 1998 .

In situ electron spin resonance of initial oxidation processes of Si surfaces

T. Umeda, S. Yamasaki, T. Yasuda, 2000 .

In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon

T. Umeda, S. Yamasaki, J. Isoya, 1997 .

STM observation on the initial growth of amorphous and microcrystalline silicon films

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1996 .

Spectroscopic diagnostics of plasma‐chemical‐vapor deposition from silane and germane

N. Hata, A. Matsuda, Kazunobu Tanaka, 1987 .

Characterization of amorphous silicon films by Rutherford backscattering spectrometry

Y. Hamakawa, Kazunobu Tanaka, M. Satou, 1980 .

Deposition Kinetics and Structural Control of Highly Photosensitive A-SiGe:H Alloys

A. Matsuda, Kazunobu Tanaka, 1986 .

Thermally and light‐induced instabilities in phosphorus‐doped hydrogenated amorphous silicon

H. Okushi, Kazunobu Tanaka, R. Banerjee, 1988 .

The Density-of-State Distribution in Undoped a-Si:H and a-SiGe:H Determined by Heterojunctions with c-Si

Kazunobu Tanaka, H. Matsuura, 1988 .

Preparation of highly photosensitive hydrogenated amorphous Si‐C alloys from a glow‐discharge plasma

Y. Imanishi, A. Matsuda, Kazunobu Tanaka, 1986 .

Metal‐semiconductor junctions and amorphous‐crystalline heterojunctions using B‐doped hydrogenated amorphous silicon

H. Okushi, A. Matsuda, Kazunobu Tanaka, 1984 .

The effect of hydrogen species on the electronic properties of nc-Si:H prepared in a triode PECVD system

A. Matsuda, Kazunobu Tanaka, Kunji Chen, 1996 .

New Results of nc-Si:H Films Prepared by Hydrogen-Diluted Silane in a Triode Pecvd System

A. Matsuda, Kazunobu Tanaka, Kunji Chen, 1996 .

Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane

N. Hata, A. Matsuda, Kazunobu Tanaka, 1986 .

Adsorbate-induced lattice relaxation of small supported silver particles observed by an in situ X-ray diffraction technique

Kazunobu Tanaka, H. Komiyama, A. Yanase, 1990 .

An organic functional group introduced to Si(1 1 1) via siliconcarbon bond: a liquid-phase approach

T. Yasuda, Kazunobu Tanaka, T. Okubo, 2001 .

Electron-spin-resonance center of dangling bonds in undoped a-Si:H

T. Umeda, S. Yamasaki, J. Isoya, 1999 .

Defect states and carrier capture processes in aSi:H

H. Okushi, Kazunobu Tanaka, 1984 .

1H-ENDOR-detected ESR spectra of P- and B-dope a-Si:H

S. Yamazaki, J. Isoya, Kazunobu Tanaka, 1987 .

ENDOR and ESEEM study of phosphorus-doped a-Si:H

S. Yamasaki, H. Okushi, J. Isoya, 1985 .

Hyperfine interaction between hydrogens and dangling bonds in a-Si:H studied by endor

S. Yamasaki, Kazunobu Tanaka, S. Kuroda, 1984 .

Optically induced metastable defects in undoped a-Si:H

S. Yamasaki, J. Isoya, Kazunobu Tanaka, 1991 .

Photo-induced metastability in amorphous semiconductors

Kazunobu Tanaka, Kazunobu Tanaka, 1991 .

Energy location of ESR hyperfine centers of P-doped a-Si:H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1985 .

Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent

S. Yamasaki, H. Okushi, A. Matsuda, 1982 .

Photoinduced phenomena in amorphous chalcogenides: From phenomenology to nanoscale

A. Kolobov, Kazunobu Tanaka, 2001 .

Nucleation and coalescence in hydrogenated amorphous silicon studied by scanning tunneling microscopy

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1994 .

Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

A. Matsuda, Kazunobu Tanaka, K. Arai, 1990 .

In situ characterization of the growing a-Si:H surface by IR spectroscopy

A. Matsuda, Kazunobu Tanaka, K. Arai, 1991 .

Probing the Elementary Surface Reactions of Hydrogenated Silicon PECVD by In-situ ESR

S. Yamasaki, J. Isoya, Kazunobu Tanaka, 1998 .

STM and Raman study of the evolution of the surface morphology in μc-Si:H

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1996 .

Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation technique

A. Matsuda, Kazunobu Tanaka, 1986 .

Glow-Discharge Deposition of a-Si: H from Pure Si2H6 and Pure SiH4

A. Matsuda, Kazunobu Tanaka, Hideo Tanaka, 1983 .

Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy

N. Hata, A. Matsuda, Kazunobu Tanaka, 1983 .

Lifetime of dominant radicals for the deposition of a-Si:H from SiH4 and Si2H6 glow discharges

A. Matsuda, Kazunobu Tanaka, Hideo Tanaka, 1983 .

Glow-Discharge Deposition of Amorphous Silicon from SiH3F

A. Matsuda, Kazunobu Tanaka, K. Yagii, 1984 .

A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H Films

S. Yamasaki, H. Okushi, N. Hata, 1981 .

Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1981 .

Silane thermometry in radio‐frequency discharge plasma by coherent anti‐Stokes Raman spectroscopy

N. Hata, A. Matsuda, Kazunobu Tanaka, 1986 .

Silane plasma and surface processes in amorphous silicon deposition

N. Hata, Kazunobu Tanaka, 1985 .

Neutral radical detection in silane glow-discharge plasma using coherent anti-stokes raman spectroscopy☆

N. Hata, A. Matsuda, Kazunobu Tanaka, 1983 .

ZnSe epitaxial growth on zinc- and selenium-treated GaAs(001) surfaces observed by STM

T. Yasuda, Kazunobu Tanaka, T. Yao, 1996 .

Scanning Tunneling Microscopy Study of Ultrathin Fe Films Grown on GaAs(001) Surface

H. Akinaga, K. Ando, Yoshishige Suzuki, 1995 .

Anomalous Optical and Structural Properties of B-Doped a-Si:H

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1982 .

Controlled bond formation between chemical vapor deposition Si and ultrathin SiO2 layers

S. Yamasaki, T. Yasuda, Kazunobu Tanaka, 2000 .

Selective-area formation of Si microstructures using ultrathin SiO2 mask layers

S. Yamasaki, T. Yasuda, Kazunobu Tanaka, 1999 .

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

T. Yasuda, Kazunobu Tanaka, T. Yao, 1996 .

Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Photoinduced anisotropic conversion of bonding and lone-pair electrons in As 2 S 3 sglass

Victor Lyubin, A. Kolobov, T. Yasuda, 1997 .

Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption

S. Yamasaki, H. Okushi, A. Matsuda, 1982 .

Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy

S. Yamasaki, H. Okushi, N. Hata, 1981 .

Role of lone-pair electrons in reversible photostructural changes in amorphous chalcogenides

A. Kolobov, Kazunobu Tanaka, A. Roy, 1998 .

An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films

A. Kolobov, Kazunobu Tanaka, Alexander V. Kolobov, 1998 .

Dark current transport mechanism of p‐i‐n hydrogenated amorphous silicon diodes

Hideyo Okushi, Hideharu Matsuura, H. Okushi, 1985 .

Boron Doping of Hydrogenated Silicon Thin Films

S. Yamasaki, H. Okushi, A. Matsuda, 1981 .

Growth Mechanism of ZnO Film by Reactive Sputtering Method –Significance of Thermodynamics in a Plasma System–

Kazunobu Tanaka, H. Komiyama, N. Tsuji, 1990 .

Polarized Raman spectra of selenium species confined in nanochannels of AlPO4-5 single crystals

J. Caro, A. Kolobov, Kazunobu Tanaka, 1997 .

Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1981 .

Measurement of spatial distribution of gap states originating from dangling bonds near metal/a-Si:H interface

S. Yamasaki, H. Okushi, A. Matsuda, 1985 .

In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopy

T. Yasuda, Kazunobu Tanaka, T. Yao, 1996 .

Structure of selenium incorporated into nanochannels of mordenite: dependence on ion exchange and method of incorporation

A. Kolobov, Kazunobu Tanaka, S. Romanov, 1997 .

Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

JRCAT – A Nanotechnology Center in Tsukuba

Kazunobu Tanaka, 2000 .

Time-domain measurements of spin relaxation processes of dangling-bond defects in hydrogenated amorphous silicon

S. Yamasaki, J. Isoya, A. Matsuda, 1994 .

A nanometer scale mechanism for the reversible photostructural change in amorphous chalcogenides

A. Kolobov, Kazunobu Tanaka, A. Roy, 1998 .

A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes

S. Yamasaki, H. Okushi, A. Matsuda, 1980 .

Photo-Induced Phenomena in Amorphous Semiconductors

Kazunobu Tanaka, Kazunobu Tanaka, 1981 .

Energy dependence of electron-capture cross section of gap states in n -type a -Si:H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1982 .

Photostructural changes in amorphous selenium: an in situ EXAFS study at low temperature

A. Kolobov, Kazunobu Tanaka, K. Tanaka, 1996 .

An X-ray absorption study of selenium confined in channels of cancrinite: Evidence for dimerisation in highly oriented chains

A. Kolobov, Kazunobu Tanaka, H. Oyanagi, 1997 .

Energy levels of dangling-bond centres in a-Si:H studied by photocapadtance transient spectroscopy

H. Okushi, Kazunobu Tanaka, 1987 .

Photo-induced transient localized states in a-Si:H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1983 .

Doping-induced and photo-induced modification of electron-emission rate at localized states in P-doped a-Si:H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1983 .

Reversible photoinduced modification of electron‐capture cross section at localized states in a‐Si:H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1983 .

PAS study of gap-state profiles of P-doped and undoped a-Si:H

S. Yamasaki, Kazunobu Tanaka, 1982 .

Photodoping of Ag into Single Crystal As 2 S 3

Kazunobu Tanaka, A. Hiraki, T. Imura, 1983 .

Photomelting of selenium at low temperature

A. Kolobov, Kazunobu Tanaka, Alexander V. Kolobov, 1999 .

Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates

T. Umeda, S. Yamasaki, T. Yasuda, 1998 .

ANNEALING STUDIES ON LOW OPTICAL ABSORPTION OF GD a-Si:H USING PHOTOACOUSTIC SPECTROSCOPY

Nobuhiro Hata, Hideyo Okushi, Satoshi Yamasaki, 1981 .

Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited µc-Si:H

A. Matsuda, Kazunobu Tanaka, K. Kumagai, 1983 .

Gap States in Phosphorus-Doped a-Si:H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1985 .

Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films

H. Okushi, Kazunobu Tanaka, A. Bandyopadhyay, 1989 .

GROWTH OF AMORPHOUS-LAYER-FREE MICROCRYSTALLINE SILICON ON INSULATING GLASS SUBSTRATES BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

T. Umeda, S. Yamasaki, T. Yasuda, 1997 .

Influence of Power-Source Frequency on the Properties of GD a-Si:H

A. Matsuda, Kazunobu Tanaka, Hideo Tanaka, 1984 .

Light‐induced changes of gap‐state profile in phosphorus‐doped hydrogenated amorphous silicon

H. Okushi, Kazunobu Tanaka, R. Banerjee, 1989 .

Thermally- and light-induced metastable states in p-doped a-Si:H

H. Okushi, Kazunobu Tanaka, R. Banerjee, 1989 .

Light-induced defects in phosphorus-doped hydrogenated amorphous silicon

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1992 .

Energy level and photoionization cross section of gap states in a-Si:H

H. Okushi, Kazunobu Tanaka, 1987 .

Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase

K. Wasa, A. Matsuda, Kazunobu Tanaka, 1988 .

Phase Shift Spectroscopy of Modulated Photocurrent: Its Application to Gold Levels in Crystalline Si

H. Okushi, Kazunobu Tanaka, H. Oheda, 1981 .

New results of spin-lattice relaxation in a-Si:H by pulsed ESR

S. Yamasaki, J. Isoya, A. Matsuda, 1993 .

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

S. Yamasaki, A. Matsuda, Kazunobu Tanaka, 1993 .

An evidence of solid-phase chemical equilibration of donor concentration in a-Si:H

H. Okushi, Kazunobu Tanaka, K. Arai, 1991 .

The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1989 .

Temperature dependence of electron-capture cross section of localized states in a − S i : H

S. Yamasaki, H. Okushi, Kazunobu Tanaka, 1983 .

Laser-induced suppression of photocrystallization rate in amorphous selenium films

A. Kolobov, Kazunobu Tanaka, A. Roy, 1998 .

Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si: H

S. Yamasaki, H. Okushi, M. Hotta, 1982 .

Energy level of neutral dangling-bond center (DO) in undoped a:Si:H determined by isothermal capacitance transient spectroscopy under high temperature

H. Okushi, Kazunobu Tanaka, Kouji Mori, 1987 .

Oxygen-Induced Reversible Structural Change of Supported fine Silver Particles Observed by In Situ Optical Absorption and X-ray Diffraction

Kazunobu Tanaka, H. Komiyama, A. Yanase, 1990 .

Spatial distribution of phosphorus atoms surrounding spin centers of P-doped hydrogenated amorphous silicon elucidated by pulsed ESR

T. Umeda, S. Yamasaki, Jung-kyu Lee, 1996 .

Pulsed ESR Study of the Conduction Electron Spin Center in μc-Si:H

S. Yamasaki, J. Isoya, A. Matsuda, 1996 .

Antioxidant activity of xanthophylls on peroxyl radical-mediated phospholipid peroxidation.

B. P. Lim, J. Terao, Kazunobu Tanaka, 1992, Biochimica et biophysica acta.

PHOTOINDUCED ANISOTROPY IN VITREOUS AS2S3 : A REFLECTANCE-DIFFERENCE STUDY

A. Kolobov, T. Yasuda, Kazunobu Tanaka, 1997 .

Electron spin resonance observation of the Si(111)-(7x7) surface and its oxidation process.

T. Umeda, S. Yamasaki, T. Yasuda, 2001, Physical review letters.

Ultimate Manipulation of Atoms and Molecules A New Project

Kazunobu Tanaka, 1993 .

Preparation and Characterization of Reactively-Sputtered Amorphous Si: H Films

S. Yamasaki, H. Okushi, A. Matsuda, 1980 .