Guichuang Zhu

A Novel Reverse Conducting SOI-LIGBT with Double Integrated NMOS for Enhanced Reverse Recovery

Weifeng Sun, Long Zhang, Jing Zhu, 2019, 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).

Low-Loss SOI-LIGBT With Assistant-Depletion Trench and Partial P-type Buried Layer

Weifeng Sun, Long Zhang, Jing Zhu, 2019, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Integrated 100 V bootstrap diode with enhanced reverse recovery characteristics for eGaN‐field effect transistor gate drivers

Weifeng Sun, Long Zhang, Jing Zhu, 2020 .