Ooksang Yoo

Plasma induced damage of aggressively scaled gate dielectric (EOT ≪ 1.0nm) in metal gate/high-k dielectric CMOSFETs

Chang Yong Kang, Byoung Hun Lee, Sung Woo Kim, 2008, 2008 IEEE International Reliability Physics Symposium.

Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's

H. Lee, Ooksang Yoo, I. Han, 2008 .

Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON

H. Lee, Ga-Won Lee, B. Lee, 2009 .

Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET

H. Lee, Ga-Won Lee, Ooksang Yoo, 2007 .

Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

H. Lee, Jungwoo Oh, P. Majhi, 2011 .

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

H. Lee, B. Lee, C. Kang, 2009 .

PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics

Yoon-Ha Jeong, Chang Yong Kang, J.C. Lee, 2008, IEEE Electron Device Letters.

Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs

H. Lee, Ga-Won Lee, Ooksang Yoo, 2006, 2006 IEEE Nanotechnology Materials and Devices Conference.

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

B. H. Lee, H. Lee, C. Kang, 2008 .