M. Imaizumi

发表

Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications

M. Imaizumi, N. Miura, 2015, IEEE Transactions on Electron Devices.

Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

T. Oomori, Y. Nakao, Y. Tarui, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Switching Characteristics of SiC-MOSFET and SBD Power Modules

Tatsuo Ozeki, Masayuki Imaizumi, Hiroshi Nakatake, 2006 .

Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET

Y. Nakao, T. Oomori, M. Imaizumi, 2006 .

Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

T. Oomori, Y. Nakao, A. Furukawa, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V

S. Hino, T. Oomori, M. Imaizumi, 2013 .

Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

S. Yamakawa, M. Furuhashi, N. Yutani, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Substantial Reduction of Power Loss in a 14kVA SiC-Inverter

S. Nakata, T. Oomori, M. Imaizumi, 2009 .

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current

Y. Nakao, T. Oomori, M. Imaizumi, 2008 .

Transient behavior in RHEED intensity oscillations observed in chemical beam epitaxy of InP

M. Imaizumi, M. Gotoda, Y. Nomura, 1990 .

Electrical and optical properties of silicon doped InP grown by gas source MBE

M. Imaizumi, M. Gotoda, Y. Nomura, 1990 .

Leakage current in Ti/4H-SiC Schottky barrier diode

H. Sugimoto, M. Imaizumi, Y. Tarui, 2006 .

Influence of pinning trap in Ti/4H–SiC Schottky barrier diode

H. Sugimoto, M. Imaizumi, K. Fujihira, 2003 .

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

S. Yamakawa, M. Imaizumi, H. Sumitani, 2014 .

Growth of ZnS and ZnSSe by gas-source molecular beam epitaxy using hydride group VI sources

M. Nunoshita, M. Imaizumi, M. Suita, 1995 .

Growth of n- and p-ZnSe by gas source molecular beam epitaxy using metal Zn and H2Se

M. Imaizumi, T. Isu, K. Ohtsuka, 1994 .

Structure of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer

M. Imaizumi, J. Tanimura, O. Wada, 1995 .

Crystal growth of GaAs and AlGaAs by OMVPE using triethylarsenic as arsenic source

A. Sasaki, S. Fujita, M. Imaizumi, 1988 .

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs

Masayuki Imaizumi, Tatsuo Oomori, Naruhisa Miura, 2008 .

4H-SiC Trench MOSFET with Bottom Oxide Protection

Shuhei Nakata, Nobuo Fujiwara, Masayuki Imaizumi, 2014 .

Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET

N. Fujiwara, S. Nakata, S. Yamakawa, 2015 .

Tem Study of Stacking Faults Formed in Pairs in a ZnSe Epitaxial Layer on a GaAs(00l) Buffer Layer

M. Imaizumi, J. Tanimura, O. Wada, 1995 .

Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy

M. Nunoshita, M. Imaizumi, H. Namizaki, 1996 .

Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H2Se

M. Imaizumi, Y. Endoh, Toshiro Isu Toshiro Isu, 1994 .

Electrical Characterization of Au/p-ZnSe Structure

M. Imaizumi, M. Suita, K. Ohtsuka, 1996 .

Gas-source molecular beam epitaxy of MgZnSSe for fabricating blue/green laser diodes

H. Sugimoto, M. Imaizumi, T. Ozeki, 1996 .

Crystalline defects in ZnSe layers grown by gas source molecular beam epitaxy

M. Nunoshita, M. Imaizumi, M. Suita, 1995 .

Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices

M. Imaizumi, K. Ohtsuka, Masahiro Nunoshita Masahiro Nunoshita, 1993 .

Successful enhancement of lifetime for SiO/sub 2/ on 4H-SiC by N/sub 2/O anneal

M. Imaizumi, N. Miura, K. Fujihira, 2004, IEEE Electron Device Letters.

Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen

H. Sugimoto, M. Imaizumi, T. Isu, 1992 .

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

S. Yamakawa, M. Imaizumi, H. Sumitani, 2015 .

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

S. Yamakawa, M. Imaizumi, H. Sumitani, 2014 .

Shuttle Activation Annealing of Implanted Al in 4H-SiC

T. Oomori, M. Imaizumi, Tomokatsu Watanabe, 2008 .

Remarkable advances in SiC power device technology for ultra high power systems

S. Hino, S. Nakata, S. Yamakawa, 2013, 2013 IEEE International Electron Devices Meeting.

Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

Masayuki Imaizumi, Naoki Yutani, Tatsuo Oomori, 2007 .

Characteristics of 4H–SiC MOS interface annealed in N2O

M. Imaizumi, K. Fujihira, Y. Tarui, 2005 .

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode

T. Iwamatsu, S. Hino, S. Nakata, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Reliability investigation with accelerated body diode current stress for 3.3 kV 4H-SiC MOSFETs with various buffer epilayer thickness

Hiroaki Sumitani, Masayuki Imaizumi, Eisuke Suekawa, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition

Y. Nakao, T. Oomori, M. Imaizumi, 2008 .

Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs

Yutaka Fukui, Nobuo Fujiwara, Masayuki Imaizumi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating

Y. Nakao, T. Oomori, M. Imaizumi, 2009 .

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

Shuhei Nakata, Kenji Hamada, Masayuki Imaizumi, 2014 .