N. Yokoyama
发表
K. Sakamoto,
N. Yokoyama,
Hiroshi Hozoji,
2020,
IEEJ Transactions on Electrical and Electronic Engineering.
N. Yokoyama,
A. Shima,
Y. Shimamoto,
2015
.
N. Yokoyama,
K. Ishikawa,
H. Onose,
2007,
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
N. Yokoyama,
K. Ishikawa,
H. Shimizu,
2014
.
R. Yamada,
N. Yokoyama,
A. Shima,
2013
.
N. Yokoyama,
A. Shima,
N. Kameshiro,
2017
.
M. Moniwa,
T. Kaga,
K. Torii,
1997
.
Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted Into 4H-SiC (0001)
N. Yokoyama,
K. Mochizuki,
2011,
IEEE Transactions on Electron Devices.
N. Yokoyama,
A. Shima,
N. Kameshiro,
2015
.
Y. Homma,
N. Yokoyama,
K. Hinode,
1991
.
Eiji Takeda,
Fumio Murai,
Toru Kaga,
1995
.
Y. Homma,
N. Yokoyama,
K. Hinode,
1989
.
Y. Kawamura,
T. Yamamoto,
N. Yokoyama,
1998
.
Hidekatsu Onose,
Natsuki Yokoyama,
N. Yokoyama,
2008
.
N. Yokoyama,
K. Mochizuki,
N. Kameshiro,
2009,
IEEE Transactions on Electron Devices.
Takeshi Sakata,
Eiji Takeda,
Mayu Aoki,
1995,
IEEE J. Solid State Circuits.
D. Hisamoto,
K. Washio,
N. Sugii,
2001,
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).