Siva Kotamraju

发表

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

V. Naidu, Siva Kotamraju, Vidya Naidu, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4 H-SiC

V. Naidu, Siva Kotamraju, 2022 .

An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO_2-SiO_2 Dielectric Stack at High Temperatures

Siva Kotamraju, Pavan Vudumula, 2018 .

Study of degradation in 3J inverted metamorphic (IMM) solar cell due to irradiation-induced deep level traps and threading dislocations using finite element analysis

Siva Kotamraju, M. Sukeerthi, 2021 .

Trap and carrier removal study of 4J InGaP/InGaAs-GaAsP MQW/InGaAsNSb/Ge high efficient space solar cell using advanced physical models

Siva Kotamraju, M. Sukeerthi, 2021 .

Study of deep level defects in InGaP/InGaAs-GaAsP/InGaAsN quantum well based multi-junction solar cell using finite element analysis

S. Puthanveettil, Siva Kotamraju, M. Sukeerthi, 2019, Superlattices and Microstructures.

Modeling of InGaP/InGaAs-GaAsP/Ge multiple quantum well solar cell to improve efficiency for space applications

S. Puthanveettil, Siva Kotamraju, M. Sukeerthi, 2019, Solar Energy.

Degradation analysis of 3J InGaP/InGaAs/InGaAsN solar cell due to irradiation induced defects with a comparative study on bottom homo and hetero InGaAsN subcell

Siva Kotamraju, P. N. Rao, M. Sukeerthi, 2018, Solar Energy.

Improved oxide field and switching performance obtained in a CoolSiCTM trench MOSFET by incorporating the superjunction concept

Siva Kotamraju, Pavan Vudumula, Srivalli Kiranmayee Pelluri, 2018, Semiconductor Science and Technology.

Study of degradation in InGaP/InGaAs/Ge multi-junction solar cell characteristics due to irradiation-induced deep level traps using finite element analysis

M. Sankaran, S. Puthanveettil, Siva Kotamraju, 2019, Solar Energy.

Differences between chloro‐carbon and hydro‐carbon precursors in low‐temperature epitaxial growth of 4H‐SiC

Siva Kotamraju, Y. Koshka, B. Krishnan, 2010 .

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2013 .

Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Siva Kotamraju, Y. Koshka, B. Krishnan, 2011 .

Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors

Siva Kotamraju, Y. Koshka, B. Krishnan, 2010 .

Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method

Siva Kotamraju, H. Das, Y. Koshka, 2010 .

Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth

Siva Kotamraju, G. Melnychuk, J. N. Merrett, 2010 .

Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H‐SiC at very high growth rates

Siva Kotamraju, Y. Koshka, B. Krishnan, 2009 .

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition

Siva Kotamraju, S. Sundaresan, H. Issa, 2009 .

Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers

Siva Kotamraju, V. Reddy, 2018, Materials Science in Semiconductor Processing.

Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile

Siva Kotamraju, Pavan Vudumula, 2019, IEEE Transactions on Electron Devices.

Design and Optimization of 1.2-kV SiC Planar Inversion MOSFET Using Split Dummy Gate Concept for High-Frequency Applications

Siva Kotamraju, Pavan Vudumula, 2019, IEEE Transactions on Electron Devices.

Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2008 .

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Siva Kotamraju, Y. Koshka, B. Krishnan, 2012 .

Degradation study on triple junction inverted metamorphic InGaP/InGaAs-GaAsP MQW/InGaAs multiple quantum well solar cell using advanced physical models

Siva Kotamraju, S. M., 2022, Micro and Nanostructures.

Improved reverse recovery characteristics obtained in 4H-SiC double-trench superjunction MOSFET with an integrated p-type Schottky diode

Siva Kotamraju, Pavan Vudumula, Siva Kotamraju, 2020, IET Circuits Devices Syst..

The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability

Siva Kotamraju, Pavan Vudumula, 2021, Journal of Computational Electronics.

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K

Siva Kotamraju, Pavan Vudumula, 2022, Materials Science Forum.

Effect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based Simulation

Siva Kotamraju, Pavan Vudumula, 2019, Materials Science Forum.

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method

A. Henry, O. Kordina, Siva Kotamraju, 2012 .

Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2008 .