H. Strack

A new generation of high voltage MOSFETs breaks the limit line of silicon

J. Tihanyi, G. Deboy, N. Marz, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

The transistor behavior in a circuit with a shorted load

Gerhard Miller, Alfred Porst, A. Porst, 1990 .

Vertical bipolar transistors on buried silicon nitride layers

H. Strack, H. Munzel, G. Albert, 1984, IEEE Electron Device Letters.

[In vivo measurement of 32phosphorus incorporation in non-irradiated and roentgen irradiated carcinomas of the white mouse. Experiment of individual therapy].

H. Strack, L. Rausch, G. Linhart, 1973, Strahlentherapie.