Yamin Zhang

发表

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current

Kun Bai, Chunsheng Guo, Bangbing Shi, 2019, IEEE Transactions on Power Electronics.

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Shiwei Feng, Yamin Zhang, Bangbing Shi, 2018, IEEE Transactions on Power Electronics.

Rapid test method for thermal characteristics of semiconductor devices

Shiwei Feng, Yamin Zhang, Dong Shi, 2017, 2017 33rd Thermal Measurement, Modeling & Management Symposium (SEMI-THERM).

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

D. Chu, Chunsheng Guo, Shiwei Feng, 2020, IEEE Transactions on Electron Devices.

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Chunsheng Guo, Shiwei Feng, Yamin Zhang, 2021, Semiconductor Science and Technology.

A voltage-transient method for characterizing traps in GaN HEMTs

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2019, Microelectronics Reliability.

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Shiwei Feng, Yamin Zhang, Yuxuan Xiao, 2020, IEEE Transactions on Electron Devices.

Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2018, Solid-State Electronics.

Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2018, IEEE Transactions on Electron Devices.

Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

Xiaodong Han, Chunsheng Guo, Shiwei Feng, 2017, IEEE Transactions on Electron Devices.

Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2019, IEEE Transactions on Device and Materials Reliability.

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

Chunsheng Guo, Shiwei Feng, Yamin Zhang, 2018, Solid-State Electronics.

Experimental investigation on dipole and band offset affected by charge neutrality level modulation

Wenwu Wang, Shiwei Feng, Yamin Zhang, 2022, Applied Physics A.

Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

Xiaodong Han, Shiwei Feng, Yamin Zhang, 2015 .

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Chunsheng Guo, Shiwei Feng, Yamin Zhang, 2014, 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS).

Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

Shiwei Feng, Yamin Zhang, Lei Shi, 2015 .

The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs

Lei Shi, Kun Liu, Hui Zhu, 2015, Microelectron. Reliab..

GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect

Shaobo Dun, Yuangang Wang, Xin Tan, 2019, 2019 IEEE 13th International Conference on ASIC (ASICON).

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Shiwei Feng, Chunsheng Guo, Xueqin Gong, 2014, IEEE Transactions on Device and Materials Reliability.

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Shiwei Feng, Guangchen Zhang, Chunsheng Guo, 2014, IEEE Electron Device Letters.

Temperature distribution measurement based on field-programmable gate array embedded ring oscillators

Bangbing Shi, Shiwei Feng, Yamin Zhang, 2019, Solid-State Electronics.

Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

Shiwei Feng, Yamin Zhang, Shijie Pan, 2021, Journal of Physics: Conference Series.

Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

Kun Liu, Bangbing Shi, Shiwei Feng, 2015, IEEE Electron Device Letters.

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Chunsheng Guo, Shiwei Feng, Yamin Zhang, 2022, IEEE Transactions on Electron Devices.

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Shiwei Feng, Yamin Zhang, Shijie Pan, 2023, IEEE Transactions on Electron Devices.

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test

Xin He, Chao Wang, Jingwei Li, 2017, Microelectron. J..

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2023, IEEE Transactions on Power Electronics.

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2021, IEEE Transactions on Electron Devices.

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Shiwei Feng, Yamin Zhang, Lixing Zhou, 2022, IEEE Transactions on Electron Devices.

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Shiwei Feng, Yamin Zhang, Lixing Zhou, 2022, Applied Physics Letters.

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2021 .

A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2017, IEEE Transactions on Electron Devices.

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Xiang Zheng, Shiwei Feng, Yamin Zhang, 2016, Microelectron. Reliab..

Thermal investigation of LED array with multiple packages based on the superposition method

Dong Shi, Bing Deng, Shiwei Feng, 2015, Microelectron. J..

Design and implementation of microcirculation cooling device for microelectronic devices based on electrostatic force

Yamin Zhang, Bo Zhang, Meng Zhang, 2023, Journal of Physics: Conference Series.

Degradation analysis of GaN-based high–electron-mobility transistors under different stresses in semi-on state conditions

Yamin Zhang, Xiang Zheng, Meng Zhang, 2024, Solid-State Electronics.

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

Bing Deng, Hui Zhu, Jianwei Zhang, 2013, Microelectron. Reliab..