Lei Shi

发表

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current

Kun Bai, Chunsheng Guo, Bangbing Shi, 2019, IEEE Transactions on Power Electronics.

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Shiwei Feng, Yamin Zhang, Bangbing Shi, 2018, IEEE Transactions on Power Electronics.

JFET test structures for monitoring strain-enhanced mobility

L. Nanver, V. Jovanovic, S. Frégonèse, 2006 .

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

Lei Shi, Guo Chunsheng, F. Shiwei, 2015 .

Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

Xiaodong Han, Shiwei Feng, Yamin Zhang, 2015 .

Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

Shiwei Feng, Yamin Zhang, Lei Shi, 2015 .

The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs

Lei Shi, Kun Liu, Hui Zhu, 2015, Microelectron. Reliab..

Synergistic improvement of device performance and bias stress stability of IGZO TFT via back-channel graded nitrogen doping

Lei Shi, Jingfeng Wang, Yue Zhang, 2021 .

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Shiwei Feng, Chunsheng Guo, Xueqin Gong, 2014, IEEE Transactions on Device and Materials Reliability.

Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

Kun Liu, Bangbing Shi, Shiwei Feng, 2015, IEEE Electron Device Letters.