H. Shiomi

发表

Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance

K. Fukuda, H. Shiomi, H. Kitai, 2016 .

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Koji Katayama, Masaya Okada, Masaki Ueno, 2010 .

Epitaxial Growth of Diamond and Diamond Devices

N. Fujimori, T. Imai, H. Shiomi, 1989 .

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

H. Kinoshita, H. Shiomi, M. Yoshimoto, 2008 .

High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

N. Fujimori, H. Shiomi, Y. Nishibayashi, 1990 .

Reactive ion etching of diamond in O2 and CF4 plasma, and fabrication of porous diamond for field emitter cathodes

H. Shiomi, 1997 .

Diamond Active Electronic Devices

H. Shiomi, 2002 .

Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films

N. Fujimori, H. Shiomi, Y. Nishibayashi, 1989 .

Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film

N. Fujimori, T. Imai, H. Shiomi, 1989 .

Moth-Eye Light-Emitting Diodes

S. Kamiyama, H. Amano, I. Akasaki, 2004 .

V-groove trench gate SiC MOSFET with a double reduced surface field junction termination extensions structure

Y. Saitoh, S. Harada, H. Shiomi, 2019, Japanese Journal of Applied Physics.

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC

S. Nishino, H. Shiomi, K. Nishio, 2008 .

Growth Rate and Surface Morphology of Diamond Homoepitaxial Films on Misoriented (001) Substrates

H. Shiomi, T. Tsuno, Shin-ichi Shikata Shin-ichi Shikata, 1996 .

Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method

N. Fujimori, H. Shiomi, Y. Nishibayashi, 1990 .

Pulse-doped diamond p-channel metal semiconductor field-effect transistor

S. Shikata, H. Shiomi, Y. Nishibayashi, 1995, IEEE Electron Device Letters.

Impurity band structure of boron-doped homoepitaxial diamond

H. Shiomi, T. Inushima, R. Mamin, 2009 .

Hopping conduction via the excited states of boron in p-type diamond

H. Shiomi, T. Inushima, S. Ohya, 2000 .

Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography

H. Shiomi, Y. Okamoto, H. Miyazaki, 2008 .

Calculations for ledge energies on the diamond (111) surface

H. Shiomi, T. Halicioǧlu, 1993 .

Characterization of Boron-Doped Diamond Epitaxial Films

H. Shiomi, Naoji Fujimori Naoji Fujimori, Yoshiki Nishibayashi Yoshiki Nishibayashi, 1991 .

Evolution of the Impurity Band to Diamond-Like Valence Bands in Boron Doped Diamond

H. Shiomi, Y. Ota, T. Inushima, 2014 .

Crystal growth of micropipe free 4H-SiC on 4H-SiC {0 3 3̄ 8} seed and high-purity semi-insulating 6H-SiC

H. Kinoshita, H. Shiomi, M. Tajima, 2006 .

Atomic level control in gas source MBE growth of cubic SiC

T. Fuyuki, H. Matsunami, H. Shiomi, 1990 .

Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

T. Fuyuki, H. Matsunami, H. Shiomi, 1989 .

Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation

H. Shiomi, H. Okumura, Tomohisa Kato, 2019, Applied Physics Express.

Characterization of SiC Wafers by Photoluminescence Mapping

H. Kinoshita, H. Shiomi, M. Tajima, 2006 .

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

S. Harada, H. Shiomi, H. Kitai, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment

T. Hatayama, K. Fukuda, S. Harada, 2016 .

6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Light extraction process in moth-eye structure

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

H. Matsunami, T. Kimoto, H. Yano, 2002 .

Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

H. Matsunami, T. Kimoto, H. Shiomi, 2003 .

High-Voltage 4H–SiC Schottky Barrier Diodes Fabricated on (033̄8) with Closed Micropipes

H. Matsunami, T. Kimoto, H. Shiomi, 2003 .

A superior 15 kV SiC MOSFET with current spreading layer for high-frequency applications

K. Fukuda, H. Shiomi, H. Kitai, 2018, Japanese Journal of Applied Physics.

Homoepitaxial growth of 4H-SiC (0 3 3̄ 8) and nitrogen doping by chemical vapor deposition

H. Matsunami, T. Kimoto, H. Shiomi, 2003 .

4H-SiC MOSFETs on (03-38) Face

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2002 .

Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis

S. Nishino, H. Shiomi, Tomoaki Furusho, 2004 .

Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping

H. Kinoshita, H. Shiomi, M. Tajima, 2007 .

Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping

H. Kinoshita, H. Shiomi, M. Tajima, 2005 .

The Development of 4H-SiC {03-38} Wafers

H. Matsunami, T. Kimoto, S. Nishino, 2002 .

The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity

S. Nishino, H. Shiomi, K. Nakayama, 2002 .

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

Kazuyoshi Iida, Motoaki Iwaya, Akira Honshio, 2005 .

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and

K. Fukuda, H. Shiomi, H. Kitai, 2016 .

Low on-resistance and fast switching of 13-kV SiC MOSFETs with optimized junction field-effect transistor region

Kenji Fukuda, Masaki Furumai, K. Fukuda, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Crystal growth of diamond and its application for semiconductor devices

H. Shiomi, 1999 .

High-Temperature and High-Voltage Diamond Devices

N. Fujimori, H. Shiomi, Y. Nishibayashi, 1992 .

Fabrication and Properties of Diamond Devices

N. Fujimori, H. Shiomi, Y. Nishibayashi, 1991 .

Influence of substrate treatments on diamond thin film nucleation

H. Shiomi, N. Johnson, D. Stevenson, 1992 .

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

S. Harada, H. Shiomi, K. Nakayama, 2004 .

Group III nitrides grown on 4H-SiC (30 3 8) substrate by metal-organic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2004 .

Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds

H. Kinoshita, H. Shiomi, Tomoaki Furusho, 2006 .

Electrical measurements on p+–p−–p+ homoepitaxial diamond capacitors

H. Shiomi, T. Inushima, R. Mamin, 2000 .

On the properties of impurity bands generated in P-type homoepitaxial diamond☆

H. Shiomi, S. Karasawa, T. Inushima, 1998 .