Y. Ebiike

Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

T. Oomori, Y. Nakao, A. Furukawa, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

S. Yamakawa, M. Furuhashi, N. Yutani, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Reliability investigation with accelerated body diode current stress for 3.3 kV 4H-SiC MOSFETs with various buffer epilayer thickness

Hiroaki Sumitani, Masayuki Imaizumi, Eisuke Suekawa, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).