Kosuke Uchida

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

Keiji Wada, Kosuke Uchida, Kenji Hiratsuka, 2014 .

A novel multipass scheme for enhancement of second harmonic generation.

Kosuke Uchida, T. Harimoto, Boku Yo, 2011, Optics express.

Electric-Field Modulation of Thermopower for the KTaO3 Field-Effect Transistors

H. Ohta, K. Koumoto, Y. Ikuhara, 2009, 0910.3753.

A single crystalline strontium titanate thin film transistor

H. Ohta, K. Koumoto, Y. Ikuhara, 2009, 0912.4341.

Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

Kosuke Uchida, Takashi Tsuno, Toru Hiyoshi, 2016, International Symposium on Power Semiconductor Devices and IC's.

1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability

Kosuke Uchida, T. Hiyoshi, Yuji Saito, 2019 .

Lifetime estimation of SiC MOSFETs under high temperature reverse bias test

Hirofumi Yamamoto, Kosuke Uchida, Toru Hiyoshi, 2016, Microelectron. Reliab..

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Kosuke Uchida, Shinji Matsukawa, Toru Hiyoshi, 2016 .

The optimised design and characterization of 1200 V / 2.0 mΩ cm2 4H-SiC V-groove trench MOSFETs

Keiji Wada, Kosuke Uchida, Kenji Hiratsuka, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High Current SiC Transistors for Automotive Applications

Y. Saitoh, Kosuke Uchida, T. Masuda, 2019 .