M. Sakai

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

Keiji Wada, Kosuke Uchida, Kenji Hiratsuka, 2014 .

Ingan-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact

A. Yamada, P. Fons, S. Niki, 2004 .

150 A SiC V-groove trench gate MOSFET with 6 × 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer

Y. Saitoh, K. Wada, M. Sakai, 2016 .

Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

Kosuke Uchida, Takashi Tsuno, Toru Hiyoshi, 2016, International Symposium on Power Semiconductor Devices and IC's.

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Y. Saitoh, H. Yano, T. Hatayama, 2014 .

Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Shigeru Niki, Kakuya Iwata, Ken Nakahara, 2004 .