K. Hiratsuka

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

Keiji Wada, Kosuke Uchida, Kenji Hiratsuka, 2014 .

Novel Designed SiC Devices for High Power and High Efficiency Systems

K. Wada, K. Hiratsuka, Y. Mikamura, 2015, IEEE Transactions on Electron Devices.

150 A SiC V-groove trench gate MOSFET with 6 × 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer

Y. Saitoh, K. Wada, M. Sakai, 2016 .

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Y. Saitoh, H. Yano, T. Hatayama, 2014 .

600 V -Class V-Groove SiC MOSFETs

Y. Saitoh, T. Hatayama, K. Wada, 2014 .

Evaluation of nanoimprint lithography as a fabrication process of phase-shifted diffraction gratings of distributed feedback laser diodes

K. Hiratsuka, N. Kono, Y. Tsuji, 2009 .

Fast switching 4H-SiC V-groove trench MOSFETs with buried P+ structure

Keiji Wada, Hiroshi Yano, Kenji Hiratsuka, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Application of Nanoimprint Lithography to Fabrication of Distributed Feedback Laser Diodes

K. Hiratsuka, N. Kono, Y. Tsuji, 2009 .

The optimised design and characterization of 1200 V / 2.0 mΩ cm2 4H-SiC V-groove trench MOSFETs

Keiji Wada, Kosuke Uchida, Kenji Hiratsuka, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).