Wanshun Zhao

G. Yan, Xingfang Liu, Wanshun Zhao, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

Xingfang Liu, Wanshun Zhao, Guosheng Sun, 2006 .

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

B. Liu, G. Yan, Xingfang Liu, 2013, Materials.

Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode

Zhanwei Shen, G. Yan, Xingfang Liu, 2021, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Low leakage current and high unipolar current density in a 4H-SiC trench gate MOSFET with integrated Schottky barrier diode

Zhanwei Shen, G. Yan, Xingfang Liu, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss

S. Dimitrijev, Z. Wen, Zhanwei Shen, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Zhanwei Shen, G. Yan, Xingfang Liu, 2022, Crystals.

Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions

Zhanwei Shen, G. Yan, Xingfang Liu, 2022 .

Microstructure and Electrical Properties of Pb(Mg1/3Nb2/3)O3-BaTiO3-PbTiO3Ceramics

K. Zhao, Guojing Li, Wanshun Zhao, 2013 .

Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

Xingfang Liu, Wanshun Zhao, Guosheng Sun, 2015 .

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Zhanwei Shen, Jun Chen, Xingfang Liu, 2020 .

Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates

Xingfang Liu, Wanshun Zhao, Z. Wang, 2012 .

High compressibility of rare earth-based bulk metallic glasses

Wanshun Zhao, Riping Liu, Yung-Li Wang, 2013 .

Characterization of 4H—SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

Xingfang Liu, Wanshun Zhao, Z. Wang, 2012 .

Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

B. Liu, Xingfang Liu, Wanshun Zhao, 2013 .

The thermal stability study and improvement of 4H-SiC ohmic contact

Lei Wang, B. Liu, Xingfang Liu, 2014 .

Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Zhanwei Shen, Jun Chen, Yawei He, 2019, Materials Science Forum.

Tip-bias-induced domain evolution in PMN–PT transparent ceramics via piezoresponse force microscopy

K. Zhao, H. Zeng, L. Guojing, 2015 .

Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2022, Semiconductor Science and Technology.

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy

Zhanwei Shen, Yawei He, Xingfang Liu, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Wanshun Zhao, Lei Wang, Lin Dong, 2013 .

Homoepitaxial growth and hot-wall low-pressure chemical vapor deposition reactor MOS structures of 4H-SiC on off-oriented n-type (0001) Si-faces

Jin Ning, Wanshun Zhao, Guosheng Sun, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2019, Materials Science Forum.

SiC Warm-wall LPCVD growth on multiple 50-mm diameter wafers

Jin Ning, Xingfang Liu, Wanshun Zhao, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Characterization of epitaxial layers grown on 4H-SiC (000-1) substrates

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2022, Journal of Crystal Growth.

Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

Jin Ning, Xingfang Liu, Wanshun Zhao, 2007 .

Optimized P-emitter doping for switching-off loss of superjunction 4H-SiC IGBTs

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Growth and characterization of 4H-SiC by horizontal hot-wall CVD

Wanshun Zhao, Guosheng Sun, Yiping Zeng, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

Xingfang Liu, Wanshun Zhao, Lei Wang, 2012 .

Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling

Yawei He, Xingfang Liu, Wanshun Zhao, 2020 .

Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer

L. Wang, Xingfang Liu, Wanshun Zhao, 2007 .

Localized anodization of 4H–SiC by electrochemical etching with constant current mode in KOH solutions

Xingfang Liu, Wanshun Zhao, Lei Wang, 2023, Micro and Nanostructures.

Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

Jin Ning, Xingfang Liu, Wanshun Zhao, 2007 .

Nanometer‐scale recording on an organic‐complex thin film with a scanning tunneling microscope

Hongjun Gao, Wanshun Zhao, Huiyin Chen, 1996 .