H. Ólafsson

发表

Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

Einar Ö. Sveinbjörnsson, Eckhard Pippel, E. Pippel, 2005 .

High Channel Mobility 4H-SiC MOSFETs

H. Zirath, P. Nilsson, H. Ólafsson, 2006 .

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

M. Syväjärvi, R. Yakimova, P. Nilsson, 2005 .

Observation of interface defects in thermally oxidized SiC using positron annihilation

H. Ólafsson, E. Sveinbjörnsson, J. Dekker, 2003 .

Analysis of the electron traps at the 4H-SiC/SiO 2 interface using combined CV/thermally stimulated current measurements

I. Tyagulski, T. Rudenko, H. Ólafsson, 2004 .

Positron Annihilation Studies of Defects at the SiO2/SiC Interface

H. Ólafsson, E. Sveinbjörnsson, J. Dekker, 2003 .

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

H. Ólafsson, E. Sveinbjörnsson, R. Jos, 2005 .

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)

H. Ólafsson, E. Sveinbjörnsson, G. Gudjónsson, 2004 .

Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

I. N. Osiyuk, V. Lysenko, I. Tyagulski, 2001 .

A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

I. N. Osiyuk, I. Tyagulski, T. Rudenko, 2003 .

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Rik Jos, Einar Ö. Sveinbjörnsson, H. Ólafsson, 2007 .

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, Einar Ö. Sveinbjörnsson, I. Tyagulski, 2005 .

A strong reduction in the density of near-interface traps at the SiO2∕4H‐SiC interface by sodium enhanced oxidation

H. Ólafsson, E. Sveinbjörnsson, R. Jos, 2007 .

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

H. Ólafsson, E. Sveinbjörnsson, R. Jos, 2007 .

Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots

M. Malmkvist, H. Ólafsson, E. Sveinbjörnsson, 2003 .

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

H. Zirath, P. Nilsson, H. Ólafsson, 2005, IEEE Electron Device Letters.

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

P. Nilsson, H. Ólafsson, E. Sveinbjörnsson, 2005 .

High field effect mobility in Si face 4H-SiC MOSFET transistors

H. Zirath, H. Ólafsson, E. Sveinbjörnsson, 2004 .