T. Fujimoto

发表

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

T. Hoshino, N. Ohtani, M. Katsuno, 2006 .

Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

T. Yano, Shinya Sato, N. Ohtani, 2016 .

Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface

Shinya Sato, N. Ohtani, M. Katsuno, 2017 .

Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers

N. Ohtani, M. Katsuno, T. Fujimoto, 2012, Journal of Electronic Materials.

Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boules

T. Yano, Shinya Sato, N. Ohtani, 2015 .

Surface step model for micropipe formation in SiC

N. Ohtani, M. Katsuno, T. Fujimoto, 2001 .

Step bunching behaviour on the {0 0 0 1} surface of hexagonal SiC

N. Ohtani, M. Katsuno, Hiroshi Tsuge, 2000 .

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

Shinya Sato, N. Ohtani, M. Katsuno, 2018, Materials Science Forum.

Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates

T. Yano, M. Katsuno, Hiroshi Tsuge, 2013 .

Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality

T. Hoshino, M. Katsuno, Hiroshi Tsuge, 2010 .

Boron-modified 2:17-type Sm(Co,Fe,Cu,Zr)z sintered magnets

T. Fujimoto, T. Mukai, 1988 .

Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport

T. Hoshino, N. Ohtani, M. Katsuno, 2009 .

Kerr microscopy observation of nitrogenated Sm2Fe17 intermetallic compounds

T. Fujimoto, T. Mukai, 1992 .

4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

N. Ohtani, M. Katsuno, T. Fujimoto, 2002 .

Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals

Shinya Sato, N. Ohtani, M. Katsuno, 2018, Materials Science Forum.

The Effects Of Excess Silicon And Carbon In SiC Source Materials On Sic Single Crystal Growth In Physical Vapour Transport Method

T. Yano, Shinya Sato, M. Katsuno, 2015 .

Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals

T. Yano, M. Kitabatake, Shinya Sato, 2014 .

A Thermodynamic Mechanism for PVT Growth Phenomena of SiC Single Crystals

T. Yano, Shinya Sato, N. Ohtani, 2013 .

Sublimation Growth of SiC Single Crystals

N. Ohtani, M. Katsuno, T. Fujimoto, 2004 .

Defect Formation and Reduction During Bulk SiC Growth

N. Ohtani, M. Katsuno, T. Fujimoto, 2004 .

Growth of large high-quality SiC single crystals

Tatsuo Fujimoto, Hirokatsu Yashiro, N. Ohtani, 2002 .

Structural properties of subgrain boundaries in bulk SiC crystals

N. Ohtani, M. Katsuno, T. Fujimoto, 2000 .

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

T. Hoshino, M. Katsuno, T. Fujimoto, 2010 .

Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals

T. Yano, M. Kitabatake, Shinya Sato, 2015 .

Investigation of Dislocation Behavior during Bulk Crystal Growth of SiC

T. Hoshino, N. Ohtani, M. Katsuno, 2006 .

Dislocation processes during SiC bulk crystal growth

T. Hoshino, N. Ohtani, M. Katsuno, 2006 .

Defect formation during the initial stage of physical vapor transport growth of 4H–SiC in the [112¯0] direction

T. Yano, M. Kitabatake, Shinya Sato, 2014 .

Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications

Tatsuo Fujimoto, Hirokatsu Yashiro, Hiroshi Tsuge, 2008 .

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities

T. Hoshino, N. Ohtani, M. Katsuno, 2008 .

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers

Shinya Sato, N. Ohtani, M. Katsuno, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

(Invited) Schematic Description of the Internal Stress Distribution Responsible for Defect Generation in Larger-Diameter PVT-Grown 4H-SiC Single Crystals

Shinya Sato, M. Katsuno, T. Fujimoto, 2016 .

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

T. Hoshino, N. Ohtani, M. Katsuno, 2008 .

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate

T. Yano, Shinya Sato, M. Katsuno, 2014 .

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

T. Hoshino, N. Ohtani, M. Katsuno, 2010 .

Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals

T. Hoshino, N. Ohtani, M. Katsuno, 2009 .

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals

M. Kitabatake, N. Ohtani, M. Katsuno, 2012 .

Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport

T. Hoshino, N. Ohtani, M. Katsuno, 2006 .

Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face

K. Kojima, N. Ohtani, M. Katsuno, 2002 .

Growth and Defect Reduction of Bulk SiC Crystals

N. Ohtani, M. Katsuno, T. Fujimoto, 2002 .

Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction

T. Fujimoto, M. Nakabayashi, K. Kojima, 2014 .

Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality

N. Ohtani, M. Katsuno, T. Fujimoto, 2004 .

Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis

T. Yano, M. Kitabatake, Shinya Sato, 2014 .

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface

N. Ohtani, M. Katsuno, T. Fujimoto, 2005 .

Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal

N. Ohtani, M. Katsuno, T. Fujimoto, 2004 .

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

K. Fukuda, J. Senzaki, K. Kojima, 2002 .

Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates

T. Hoshino, M. Katsuno, T. Fujimoto, 2010 .

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals

Shinya Sato, M. Katsuno, T. Fujimoto, 2012 .

Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth

Shinya Sato, N. Ohtani, M. Katsuno, 2017 .

Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules

Shinya Sato, N. Ohtani, M. Katsuno, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates

T. Yano, T. Fujimoto, T. Aigo, 2014 .

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

T. Hoshino, N. Ohtani, M. Katsuno, 2006 .

Micropipe Formation Model via Surface Step Interaction

N. Ohtani, M. Katsuno, T. Fujimoto, 2002 .

Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals

N. Ohtani, M. Katsuno, T. Fujimoto, 2006 .

A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals

T. Yano, Shinya Sato, M. Katsuno, 2013 .