John R. Williams

发表

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances

Leonard C. Feldman, L. Tsetseris, Robert A. Weller, 2006 .

Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface

A. F. Basile, L. Feldman, P. Mooney, 2014 .

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

L. Feldman, G. Chung, M. Ventra, 2000 .

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

S. Dhar, L. Feldman, S. Pantelides, 2007 .

Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery

Minseo Park, Chin-Che Tin, C. Tin, 2006 .

The Physics of Ohmic Contacts to SiC

John R. Williams, L. Porter, J. Crofton, 1997 .

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2002 .

Titanium and aluminum-titanium ohmic contacts to p-type SiC

S. Mohney, John R. Williams, J. Crofton, 1997 .

Modified Deal Grove model for the thermal oxidation of silicon carbide

Leonard C. Feldman, S. Dhar, L. Feldman, 2004 .

Kinetics of NO nitridation in SiO2/4H–SiC

Leonard C. Feldman, Robert A. Weller, Chin-Che Tin, 2003 .

Contact resistance measurements on p‐type 6H‐SiC

Peter A. Barnes, John A. Edmond, John R. Williams, 1993 .

Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

Edward A. Preble, Minseo Park, Chin-Che Tin, 2007 .

Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Leonard C. Feldman, Robert A. Weller, Chin-Che Tin, 2002 .

An investigation of proton energy effects in SiGe HBT technology

John D. Cressler, Paul W. Marshall, Robert A. Reed, 2002 .

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Leonard C. Feldman, M. Di Ventra, Robert A. Weller, 2000 .

Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Leonard C. Feldman, Sokrates T. Pantelides, Tamara Isaacs-Smith, 2006 .

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Michael C. Hamilton, Leonard C. Feldman, Aaron Modic, 2014, IEEE Electron Device Letters.

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

John W. Palmour, Mrinal K. Das, Nelson S. Saks, 2002 .

Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

Leonard C. Feldman, Robert A. Weller, Sokrates T. Pantelides, 2001 .

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Anant K. Agarwal, S. Dhar, A. Agarwal, 2012 .

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

Leonard C. Feldman, Valery V. Afanas'ev, John Rozen, 2008 .

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Leonard C. Feldman, Gilyong Chung, K. McDonald, 2003 .

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Leonard C. Feldman, Chin-Che Tin, Sokrates T. Pantelides, 2001 .

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Leonard C. Feldman, M. Di Ventra, Robert A. Weller, 2000 .

The Limits of Post Oxidation Annealing in NO

Leonard C. Feldman, John Rozen, L. Feldman, 2010 .

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Edward A. Preble, Jung-Hyun Park, Minseo Park, 2008 .

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Michael S. Mazzola, John D. Cressler, Yaroslav Koshka, 2005 .

A new approach in impurity doping of 4H-SiC using silicidation

C. Tin, John R. Williams, T. Isaacs-Smith, 2013 .

Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC

S. Mohney, John R. Williams, A. Adedeji, 2006 .

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

A. F. Basile, L. Feldman, J. Rozen, 2011 .

Ion-irradiation induced chemical ordering of FePt and FePtAu nanoparticles

John R. Williams, T. Isaacs-Smith, D. Nikles, 2005 .

Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC

L. Feldman, G. Chung, S. Pantelides, 2003 .

Nitridation of the SiO2/4H–SiC interface studied by surface-enhanced Raman spectroscopy

S. Dhar, L. Feldman, Dake Wang, 2007 .

The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H―SiC MOS devices

L. Feldman, J. Rozen, John R. Williams, 2011 .

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

K. Evans, Y. Sharma, R. Thapa, 2011 .

Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °C

J. Scofield, S. Mohney, John R. Williams, 2010 .

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

C. Tin, Dake Wang, John R. Williams, 2006 .

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

D. Schroder, M. Marinella, M. Loboda, 2010, IEEE Transactions on Electron Devices.

Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces

A. F. Basile, S. Dhar, L. Feldman, 2012 .

Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

A. F. Basile, S. Dhar, L. Feldman, 2010 .

Composite Ohmic Contacts to SiC

J. Scofield, M. Bozack, S. Mohney, 2006 .

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Joshua A. Taillon, L. Feldman, J. Rozen, 2013 .

Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC

W. J. Choyke, Y. Shishkin, S. Dhar, 2005 .

Capacitance‐voltage studies of InP metal‐oxide‐semiconductor devices irradiated with 4He+ ions

C. Tin, John R. Williams, P. Barnes, 1989 .

High Temperature Reliability of SiC n-MOS Devices up to 630 °C

R. Loloee, John R. Williams, T. Isaacs-Smith, 2006 .

Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

A. Allerman, K. Evans, Y. Sharma, 2011 .

Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

S. Dhar, G. Duscher, Y. Sharma, 2014 .

Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

S. Mohney, John R. Williams, T. Isaacs-Smith, 2002 .

Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination

S. Saddow, D. Sheridan, J. Cressler, 2001 .

High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching

S. Saddow, J. Casady, J. Cooper, 2000 .

Variation of Br quadrupole coupling with isotopic substitution in methyl bromide

John R. Williams, S. Kukolich, 1979 .

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

K. Evans, Y. Sharma, John R. Williams, 2010 .

Hydriding Reactions Induced by Ball Milling

John R. Williams, Yi Chen, 1996 .

Cross sections for the59Co(n, p)59Fe reaction between 14 and 19 MeV

John R. Williams, W. Alford, S. K. Ghorai, 1986 .

The interaction of atomic oxygen with thin copper films

A. T. Fromhold, M. Bozack, John R. Williams, 1992 .

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

L. Feldman, Wei-jie Lu, Y. Sharma, 2014 .

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

J. R. Williams, Leonard C. Feldman, John Rozen, 2009 .

Total Dose Radiation Response of Nitrided and Non-nitrided SiO$_{2}$/4H-SiC MOS Capacitors

peixiong zhao, S. Dhar, L. Feldman, 2006, IEEE Transactions on Nuclear Science.

Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

John R. Williams, G. Zangari, P. Evans, 2002 .

Phase determination and spatial distribution of an ion‐beam mixed internal interface: Fe/Sn

B. Tatarchuk, John R. Williams, D. Edwards, 1990 .

Epitaxial growth and magnetic anisotropy of electrodeposited Ni and Co thin films grown on n-type GaAs

John R. Williams, G. Zangari, W. D. Jonge, 2002 .

Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes

R. Reed, P. Marshall, D. Sheridan, 2003 .

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

John R. Williams, S.R. Wang, A. Ahyi, 2006 .

High energy proton irradiation effects on SiC Schottky rectifiers

G. Chung, F. Ren, S. Pearton, 2002 .

Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration

Y. Sharma, Dong-Joo Kim, R. Thapa, 2012 .

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

L. Feldman, G. Chung, J. Cooper, 2002 .

The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC

G. Chung, C. Tin, John R. Williams, 2000 .

Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod array

Dong-Joo Kim, R. Thapa, John R. Williams, 2012 .

Thin PSG Process for 4H-SiC MOSFET

C. Fisher, S. Dhar, L. Feldman, 2014 .

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

S. Dhar, L. Feldman, J. Rozen, 2010 .

4H-SiC oxynitridation for generation of insulating layers

L. Feldman, G. Chung, K. McDonald, 2004 .

Nitrogen passivation of deposited oxides on n 4H–SiC

L. Feldman, G. Chung, F. Ren, 2002 .

Silicon dioxide–silicon carbide interfaces: Current status and recent advances

S. Dhar, L. Feldman, S. Pantelides, 2008 .

The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs

L. Feldman, G. Chung, M. Ventra, 2000 .

Low Resistance Ohmic Contacts to n-SiC Using Niobium

John R. Williams, T. Oder, J. Crofton, 2000 .

SiC Power Device Packaging Technologies for 300 to 350°C Applications

John R. Williams, R.W. Johnson, 2005 .

Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods

M. Bozack, C. Tin, Dake Wang, 2006 .

Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

L. Feldman, C. Radtke, I. Baumvol, 2000 .

Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

S. Dhar, L. Feldman, Y. Sharma, 2015 .

Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition

C. Tin, John R. Williams, Z. Feng, 1995 .

The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

G. Chung, S. Clark, J. Cressler, 2002 .

Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers

G. Chung, F. Ren, S. Pearton, 2003 .

Light emission from 4H SiC MOSFETs with and without NO passivation

L. Feldman, G. Chung, K. McDonald, 2001 .

Phosphorous passivation of the SiO2/4H–SiC interface

L. Feldman, Y. Sharma, S. Pantelides, 2012 .

Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides

S. Dhar, P. Mawby, Y. Sharma, 2014 .

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides

V. Afanas’ev, S. Dhar, L. Feldman, 2007, International Semiconductor Device Research Symposium.

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

S. Dhar, L. Feldman, S. Ryu, 2011 .

Structure and stoichiometry of "0001… 4H-SiC/oxide interface

L. Feldman, E. Garfunkel, John R. Williams, 2010 .

Advancements in SiC Power Devices Using Novel Interface Passivation Processes

C. Fisher, S. Dhar, L. Feldman, 2014 .

Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

M. Bozack, John R. Williams, J. Crofton, 1996 .

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

R. Gutmann, A. Agarwal, T. Chow, 2004 .

Test synopsis of : The E ff ects of Radiation Type on the Tolerance of High-Power 4 H-SiC Diodes

R. Reed, P. Marshall, D. Sheridan, 2004 .

Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance

S. Mohney, Junhong Lin, John R. Williams, 2000 .

Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

G. Chung, F. Ren, S. Pearton, 2003 .

Raman scattering of self-assembled gallium nitride nanorods synthesized by plasma-assisted molecular beam epitaxy

C. Tin, J. Williams, Dake Wang, 2005 .