B. Vanmil

发表

Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers

K. Lew, R. Myers-Ward, C. Eddy, 2010 .

Development toward wafer-scale graphene RF electronics

P. Asbeck, J. Moon, P. Campbell, 2009, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

P. Asbeck, J. Moon, P. Campbell, 2010, IEEE Electron Device Letters.

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

J. Moon, P. Campbell, R. Myers-Ward, 2009, IEEE Electron Device Letters.

On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC

J. Butler, T. Feygelson, K. Hobart, 2010 .

Development of wafer-scale graphene RF electronics

P. Asbeck, J. Moon, P. Campbell, 2010, The 5th European Microwave Integrated Circuits Conference.

Epitaxial graphene RF field-effect transistors

P. Asbeck, D. K. Gaskill, D. Curtis, 2009, 2009 Device Research Conference.

Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

Xiaojun Weng, Maxwell Wetherington, Eric Frantz, 2009, Nano letters.

Heavy Cr doping of ZnSe by molecular beam epitaxy

Lijun Wang, B. Vanmil, A. Ptak, 2002 .

Hall effect mobility of epitaxial graphene grown on silicon carbide

Charles R. Eddy, D. Kurt Gaskill, Jr., 2009, 0907.5026.

Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor

K. Lew, R. Myers-Ward, C. Eddy, 2007 .

Mercury cadmium selenide for infrared detection

B. Vanmil, C. Swartz, P. Wijewarnasuriya, 2013 .

Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes

J. Zhao, X. Xin, Jun Hu, 2011, IEEE Transactions on Nuclear Science.

4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm

Xiaobin Xin, Kok-Keong Lew, J.H. Zhao, 2008, IEEE Transactions on Electron Devices.

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jian H. Zhao, P. Alexandrov, X. Xin, 2008 .

4 H-SiC Single Photon Avalanche Diode for 280 nm UV Applications

Jian H. Zhao, P. Alexandrov, X. Xin, 2007 .

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

M. Ancona, K. Hobart, K. Lew, 2011, IEEE Transactions on Electron Devices.

Photoluminescence of ZnTe and ZnTe:Cr grown by molecular-beam epitaxy

B. Vanmil, N. Giles, M. Luo, 2005 .

Study of the 2-3 /spl mu/m emission of Cr/sup 2+/ in MBE-grown ZnTe:Cr and ZnSe:Cr epilayers

A. Burger, Yunlong Cui, B. Vanmil, 2003, Conference on Lasers and Electro-Optics, 2003. CLEO '03..

Study of the 2-3 µm emission of Cr2+ in MBE-grown ZnTe:Cr and ZnSe:Cr epilayers

A. Burger, Yunlong Cui, B. Vanmil, 2003, CLEO 2003.

Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy

A. Burger, U. Roy, Yunlong Cui, 2003 .

High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure

B. Vanmil, Ting Liu, T. Myers, 2004 .

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

Jian H. Zhao, X. Xin, Jun Hu, 2011 .

Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.

P. Campbell, R. Myers-Ward, C. Eddy, 2009, Nano letters.

Near ultraviolet enhanced 4H-SiC Schottky diode

Andrew H. Jones, Jiyuan Zheng, J. Campbell, 2019 .

Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy

M. V. Rao, B. Vanmil, P. Wijewarnasuriya, 2014 .

Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2009 .

Hall effect mobility of epitaxial graphene grown on silicon carbide

Jr., P. Campbell, R. Myers-Ward, 2009, 0907.5026.

Large-Area Epitaxial Graphene: Effect of Strain and Thickness on Electronic Properties

P. Campbell, R. Myers-Ward, C. Eddy, 2009 .

Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers

P. Asbeck, J. Moon, P. Campbell, 2010, 68th Device Research Conference.

Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn1−xMgxSe grown by molecular beam epitaxy

B. Vanmil, C. Swartz, N. Giles, 2005 .

The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy

P. Treado, M. Nelson, B. Vanmil, 2001 .

Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign?

Christopher T. Zugates, P. Treado, M. Nelson, 2000 .

Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition

S. Raghavan, J. Redwing, Abhishek Jain, 2008 .

Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures

H. Hier, B. Vanmil, B. Connelly, 2018 .

Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations

P. Klein, K. Lew, R. Myers-Ward, 2010 .

Effect on chlorine incorporation as Mg is alloyed into ZnSe

J. Wills, B. Cooper, B. Vanmil, 2002 .

High temperature limitations for GaN growth by RF-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, and excess Ga-overpressure

B. Vanmil, C. Swartz, Ting Liu, 2005 .

Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.

D. Kurt Gaskill, Joseph G. Tischler, Evan R. Glaser, 2009, Nano letters.

Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS

B. Vanmil, D. Lederman, T. Myers, 2005 .

Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates

B. Karrer, F. Peiris, B. Vanmil, 2005 .

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

R. Myers-Ward, C. Eddy, D. Gaskill, 2009 .

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

M. Skowronski, K. Lew, R. Myers-Ward, 2008 .

Graphene Formation on SiC Substrates

P. Campbell, R. Myers-Ward, C. Eddy, 2009, 0907.5028.

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Liang Wang, K. Lew, R. Myers-Ward, 2009 .

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers

M. Skowronski, V. Wheeler, R. Myers-Ward, 2011 .

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates

Liang Wang, P. Klein, K. Lew, 2010 .

Etch rates for Si-face 4H-SiC using H2 and a C3H8 partial pressure

K. Lew, R. Myers-Ward, C. Eddy, 2007, 2007 International Semiconductor Device Research Symposium.

Wafer Mapping Using Deuterium Enhanced Defect Characterization

O. W. Holland, B. Vanmil, K. Hossain, 2010 .

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Jr., P. Campbell, R. Myers-Ward, 2009, ECS Transactions.

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Studies of spatial uniformity and jitter in SiC UV SPADs

E. Heilweil, J. Bienfang, E. Bellotti, 2023, Defense + Commercial Sensing.

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

P. Klein, K. Lew, R. Myers-Ward, 2008 .

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

R. Myers-Ward, C. Eddy, D. Gaskill, 2010 .

Epitaxial Graphene Growth on SiC Wafers

Jr., J. Moon, P. Campbell, 2009, ECS Transactions.

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

P. Klein, K. Lew, R. Myers-Ward, 2010 .

H2 etching and epitaxial growth on 4H-SiC boule domes

K. Lew, R. Myers-Ward, C. Eddy, 2007, 2007 International Semiconductor Device Research Symposium.

Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN

Jaime A. Freitas, Vladimir Dmitriev, Jahangir Alam, 2002 .