F. Rougieux

D. Macdonald, Chang Sun, F. Rougieux, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

D. Macdonald, A. Cuevas, B. Lim, 2011, IEEE Journal of Photovoltaics.

Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers

D. Macdonald, Chang Sun, F. Rougieux, 2018, IEEE Journal of Photovoltaics.

Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

V. Markevich, A. Peaker, Yan Zhu, 2021, IEEE Journal of Photovoltaics.

New insights into the thermally activated defects in n-type float-zone silicon

V. Markevich, A. Peaker, Yan Zhu, 2019, 15th International Conference on Concentrator Photovoltaic Systems (CPV-15).

Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

D. Macdonald, F. Rougieux, P. Zheng, 2016 .

High efficiency UMG silicon solar cells: impact of compensation on cell parameters

Roland Einhaus, Andreas Fell, Kean Chern Fong, 2016 .

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

A. P. Knights, Andres Cuevas, Fiacre E. Rougieux, 2010 .

Impact of Carrier Profile and Rear-Side Reflection on Photoluminescence Spectra in Planar Crystalline Silicon Wafers at Different Temperatures

D. Macdonald, Hieu T. Nguyen, F. Rougieux, 2015, IEEE Journal of Photovoltaics.

Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

D. Macdonald, Hieu T. Nguyen, F. Rougieux, 2014 .

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

D. Macdonald, F. Rougieux, Y. Wan, 2015 .

The Role of Charge and Recombination‐Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p‐Type Silicon under Carrier Injection

Yan Zhu, Chang Sun, F. Rougieux, 2021, physica status solidi (RRL) – Rapid Research Letters.

Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts

H. Tan, C. Jagadish, F. Rougieux, 2020, IEEE Journal of Photovoltaics.

Onset of ring defects in n-type Czochralski-grown silicon wafers

D. Macdonald, Chang Sun, F. Rougieux, 2020 .

Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

D. Macdonald, F. Rougieux, R. Basnet, 2020, physica status solidi (a).

Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman

D. Macdonald, Hieu T. Nguyen, Chang Sun, 2018, Journal of Applied Physics.

Light- and Elevated Temperature-Induced Degradation (LeTID): The Past, the Present and what Lies Ahead

Utkarshaa Varshney, M. Wright, S. Nie, 2019 .

Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering

M. D. de Jonge, C. Ryan, D. Paterson, 2012 .

Electron and Hole Mobility Reduction and Hall Factor in Phosphorus-Compensated p-Type Silicon

A. Knights, D. Macdonald, A. Cuevas, 2010 .

Synchrotron studies of solar-grade silicon feedstock and wafers

C. Ryan, M. D. Jonge, D. Howard, 2010 .

Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon

D. Macdonald, Chang Sun, F. Rougieux, 2015 .

Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

D. Macdonald, Hieu T. Nguyen, Chang Sun, 2017 .

A. Shalav, D. Macdonald, A. Cuevas, 2012 .

Impact of dopant compensation on the electrical properties of silicon for solar cells applications

F. Rougieux, 2012 .

Physical Modelling of Luminescence Spectra from Crystalline Silicon

Siew Yee Lim, D. Macdonald, Hieu T. Nguyen, 2015 .

Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Chang Sun, F. Rougieux, M. Juhl, 2020 .

Insights on the electronic parameterisation of defects in silicon obtained from the formation of the defect repository

M. Schubert, D. Macdonald, Chang Sun, 2019 .

Reassessment of the recombination properties of aluminium–oxygen complexes in n‐ and p‐type Czochralski‐grown silicon

D. Macdonald, Chang Sun, F. Rougieux, 2016 .

Characterization of Cu and Ni Precipitates in n– and p-type Czochralski-grown Silicon by Photoluminescence☆

D. Macdonald, Hieu T. Nguyen, Chang Sun, 2016 .

Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

A. Cuevas, M. Forster, F. Rougieux, 2012 .

Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon

D. Macdonald, Hieu T. Nguyen, F. Rougieux, 2015 .

Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon

Yuchao Zhang, Daniel Chen, Moonyong Kim, 2020 .

Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon

V. Markevich, A. Peaker, D. Macdonald, 2016 .

Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

V. Markevich, A. Peaker, D. Macdonald, 2016 .

Compensation Engineering for Silicon Solar Cells

D. Macdonald, A. Cuevas, M. Forster, 2012 .

Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon

F. Rougieux, M. Juhl, G. Coletti, 2022, IEEE Journal of Photovoltaics.

Influence of Annealing and Bulk Hydrogenation on Lifetime-Limiting Defects in Nitrogen-Doped Floating Zone Silicon

D. Macdonald, F. Rougieux, J. D. Murphy, 2015, IEEE Journal of Photovoltaics.

Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

H. Tan, C. Jagadish, F. Rougieux, 2018, Journal of Physics D: Applied Physics.

Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

D. Macdonald, Hieu T. Nguyen, F. Rougieux, 2016 .

Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

D. Macdonald, Chang Sun, F. Rougieux, 2018, Solar Energy Materials and Solar Cells.

Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

D. Macdonald, Hieu T. Nguyen, F. Rougieux, 2015, IEEE Journal of Photovoltaics.

Characterisation of striations in n-type silicon wafer processed with polysilicon contacts

F. Rougieux, G. Coletti, M. Siriwardhana, 2022, Solar Energy Materials and Solar Cells.

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

D. Macdonald, Hieu T. Nguyen, F. Rougieux, 2017, IEEE Journal of Photovoltaics.

Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?

D. Macdonald, F. Rougieux, J. D. Murphy, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

A. Cuevas, M. Forster, F. Rougieux, 2013, 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2.

Transport properties of p‐type compensated silicon at room temperature

D. Macdonald, A. Cuevas, F. Rougieux, 2011 .

Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density

D. Macdonald, F. Rougieux, 2014 .

Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

W. Kwapil, M. Schubert, F. Rougieux, 2019, Scientific Reports.

Density functional theory to calculate accurate defect energy levels in silicon

F. Rougieux, B. Hoex, M. A. Hossain, 2023, SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS.

On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

M. Schubert, Chang Sun, F. Rougieux, 2023, IEEE Journal of Photovoltaics.

Accurate defect recombination parameters: what are the limitations of current analyses?

D. Macdonald, Yan Zhu, Chang Sun, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Electronic Properties of the Boron–Oxygen Defect Precursor of the Light-Induced Degradation in Silicon

F. Rougieux, M. Juhl, Zhuangyi Zhou, 2022, IEEE Journal of Photovoltaics.

Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements

R. Sinton, F. Rougieux, Z. Hameiri, 2014 .

Scanning X‐ray fluorescence microspectroscopy of metallic impurities in solar‐grade silicon

David L. Paterson, Daryl L. Howard, Fiacre E. Rougieux, 2010 .

Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

F. Rougieux, M. Juhl, S. Bremner, 2023, AIP Advances.

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

D. Macdonald, Chang Sun, F. Rougieux, 2014 .

Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

Zhengshan J. Yu, D. Macdonald, Chang Sun, 2020 .