C. Magee

发表

Hydrogen localization near boron in silicon

J. Pankove, G. Lucovsky, P. Zanzucchi, 1985 .

Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation

J. Sturm, L. Lanzerotti, T. Buyuklimanli, 1996, International Electron Devices Meeting. Technical Digest.

The Effect of Hydrogen Content on the Photovoltaic Properties of Amorphous Silicon

C. Magee, D. Carlson, A. Triano, 1979 .

A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon

D. E. Carlson, Charles W. Magee, C. Magee, 1978 .

Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

C. Magee, B. Anthony, T. Hsu, 1990 .

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

J. Sturm, L. Lanzerotti, T. Buyuklimanli, 1997 .

The application of nuclear reactions for quantitative hydrogen analysis in a variety of different materials problems

G. J. Clark, B. Appleton, C. Magee, 1978 .

Profiling hydrogen in materials using ion beams

G. J. Clark, J. Ziegler, W. Lanford, 1978 .

The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon

G. J. Clark, B. Appleton, C. Magee, 1977 .

Long-term changes in the surface conditions of PLT

S. T. Picraux, J. Borders, C. Magee, 1978 .

The role of hydrogen in heavily doped amorphous silicon

P. Zanzucchi, C. Magee, D. Carlson, 1982 .

Titanium as a cathodoluminescence activator in alkali feldspars

Martin R. Lee, C. Magee, I. Parsons, 2008 .

The effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1996 .

Laser annealing of hydrogenated amorphous silicon

J. Pankove, C. Magee, C. Wu, 1980 .

Precise U–Pb baddeleyite dating of the Derim Derim Dolerite, McArthur Basin, Northern Territory: old and new SHRIMP and ID-TIMS constraints

C. Magee, J. Crowley, S. Bodorkos, 2020 .

Uranium irradiation history of carbonado diamond; implications for Paleoarchean oxidation in the São Francisco craton

E. Vicenzi, P. Heaney, C. Magee, 2016 .

Interfacial effects during GaN growth on 6H-SiC

J. Pankove, C. Magee, J. Torvik, 1999 .

On the use of secondary ion mass spectrometry in semiconductor device materials and process development

C. Magee, 1984 .

Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors

C. Magee, F. J. Feigl, D. Young, 1984 .

Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3

G. Lo, D. Kwong, J. Kuehne, 1991 .

Fluorinated thin SiO2 grown by rapid thermal processing

G. Lo, D. Kwong, J. Kuehne, 1990 .

Observation of gas absorption in evaporated amorphous silicon films using secondary ion mass spectrometry

J. Poate, J. Bean, C. Magee, 1981 .

Effect on electrical properties of segregation of implanted P+ at defect sites in Si

D. Sadana, C. Magee, J. Washburn, 1980 .

Fluorine partitioning between eclogitic garnet, clinopyroxene, and melt at upper mantle conditions

C. Magee, D. Frost, C. Beyer, 2016 .

The post-hydrogenation of low-pressure chemical vapor deposited amorphous silicon

C. Magee, A. Widmer, R. Fehlmann, 1983 .

Hydrogenated amorphous silicon films in palladium Schottky barrier cells

J. H. Thomas, C. Magee, D. Carlson, 1980 .

High‐energy (56 MeV) oxygen implantation in Si, GaAs, and InP

S. Pearton, B. Jalali, J. Poate, 1990 .

Impurity Content and Defect Density in 42 a-Si:H Films

S. Wagner, C. Magee, H. Park, 1993 .

Mechanisms for Si dopant migration in molecular beam epitaxy AlxGa1−xAs

A. Mills, K. West, L. Pfeiffer, 2000 .

28Si implantation into 40Ar implant‐pretreated semi‐insulating GaAs substrates—mobility and activation efficiency enhancement

C. Magee, S. Narayan, S. Liu, 1982 .

Hydrogen depth profiling using SIMS—Problems and their solutions

C. Magee, E. Botnick, 1981 .

Initial measurement of impurity production and hydrogen energy distribution from neutral beam injectors

C. Magee, R. Langley, 1980 .

The U-Th-Pb systematics of zircon from the Bishop Tuff: A case study in challenges to high-precision Pb/U geochronology at the millennial scale

C. Magee, R. Mundil, R. Ickert, 2015 .

Sputtering of organic molecules

C. Magee, 1983 .

On the use of CsX+ cluster ions for major element depth profiling in secondary ion mass spectrometry

Charles W. Magee, C. Magee, William L. Harrington, 1990 .

Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis

C. W. Magee, Fred A. Stevie, C. Magee, 1989 .

Carbon on surfaces of magnesium oxide and olivine single crystals. Diffusion from the bulk or surface contamination?

G. W. Arnold, C. Magee, I. Tsong, 1985 .

Mutual replacement reactions in alkali feldspars II: trace element partitioning and geothermometry

Martin R. Lee, C. Magee, I. Parsons, 2009 .

Synthesis and Preliminary Characterisation of New Silicate, Phosphate and Titanite Reference Glasses

C. Magee, S. Klemme, Y. Lahaye, 2008 .

Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

H. Marcus, C. Magee, B. Anthony, 1991 .

Effect of structure and impurities on the epitaxial regrowth of amorphous silicon

J. Poate, J. Bean, C. Magee, 1980 .

Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

J. Sturm, E. Prinz, C. Magee, 1991, IEEE Electron Device Letters.

Phosphorus out diffusion from double‐layered tantalum silicide/polycrystalline silicon structure

C. Magee, J. Maa, J. O'Neill, 1983 .

Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices

S. Banerjee, J. Lee, C. Magee, 1993 .

Depth Profiling of n‐Type Dopants in Si and GaAs Using Cs+ Bombardment Negative Secondary Ion Mass Spectrometry in Ultrahigh Vacuum

C. Magee, 1979 .

Pulsed‐laser annealing of ion‐implanted polycrystalline silicon films

C. Magee, C. Wu, 1979 .

A comparative study of SIMS depth profiling of boron in silicon

V. Deline, C. Magee, A. Huber, 1984 .

Deuterium ion fluxes to probes in the PLT edge plasma

W. Wampler, C. Magee, H. Dylla, 1980 .

Nitrogen‐atom incorporation at Si–SiO2 interfaces by a low‐temperature (300 °C), pre‐deposition, remote‐plasma oxidation using N2O

G. Lucovsky, C. Magee, D. R. Lee, 1995 .

The Effect of Hydrogen Content on the Photovoltaic Properties of Amorphous Silicon

C. Magee, D. Carlson, A. Triano, 1979 .

Depth Profiling by SIMS: Depth Resolution, Dynamic Range and Sensitivity

C. Magee, R. Honig, 1982 .

Depth resolved measurements of hydrogen isotope exchange in carbon

W. Wampler, C. Magee, 1981 .

Depth distributions of low energy deuterium implanted into silicon as determined by SIMS

C. Magee, S. Cohen, D. Voss, 1980 .

Hydrogen ion implantation profiles as determined by SIMS

C. Magee, Chung-Pao Wu, 1978 .

Round-robin study of arsenic implant dose measurement in silicon by SIMS

K. J. Kim, P. Ronsheim, D. Simons, 2006 .

Measurements of neutral beam species, impurities, spatial divergence, energy dispersion, pressure, and reionization using the TFTR U.S. Common Long Pulse Ion Source

H. Kugel, R. Kaita, A. Roquemore, 1989 .

Si dopant migration and the AlGaAs/GaAs inverted interface

K. West, L. Pfeiffer, C. Magee, 1991 .

The interdiffusion of Si, P, and In at polysilicon/GaAs interfaces

K. Kavanagh, C. Magee, J. Mayer, 1988 .

Silicon diffusion at polycrystalline‐Si/GaAs interfaces

K. Kavanagh, J. Woodall, C. Magee, 1985 .

Depth profiling of sodium in SiO2 films by secondary ion mass spectrometry

C. Magee, W. Harrington, 1978 .

Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

D. Simons, C. Magee, K. Kim, 2017 .

Routine depth profiling of ultra shallow junctions by secondary ion mass spectrometry

C. Magee, V. Chia, P. Chua, 1998 .

Recent advances in secondary ion mass spectrometry to characterize ultralow energy ion implants

C. Magee, V. Chia, M. Edgell, 1999 .

Diffusion of Ge in GaAs at SiO2-encapsulated Ge–GaAs interfaces

C. Magee, L. Kavanagh, 1987 .

The Polycrystalline‐Si Contact to GaAs

K. Kavanagh, I. Haller, J. Woodall, 1986 .

The Diffusion of Phosphorus and Indium into Gallium Arsenide from Polycrystalline-Silicon

K. Kavanagh, C. Magee, J. Mayer, 1986 .

Vacancy Diffusion at Polysilicon Encapsulated GaAs Surfaces

K. Kavanagh, C. Magee, J. Sheets, 1987 .

Hole‐mediated chemisorption of atomic hydrogen in silicon

J. Pankove, C. Magee, R. O. Wance, 1985 .

Mutual replacement reactions in alkali feldspars II: trace element partitioning and geothermometry

C. Magee, I. Parsons, J. Shelley, 2009 .

Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy

K. Suzuki, T. Nagayama, T. Buyuklimanli, 2007, IEEE Transactions on Electron Devices.

Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis

H. Gossmann, D. Jacobson, C. Magee, 2000 .

SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

T. Buyuklimanli, C. Magee, I. Abdelrehim, 2007 .

Sputtering rate change and surface roughening during oblique and normal incidence O2+ bombardment of silicon, with and without oxygen flooding

H. Gossmann, C. Magee, Stephen P. Smith, 1998 .

Secondary ion mass spectrometry depth profiling of nanometer‐scale p+‐n junctions fabricated by Ga+ focused ion beam implantation

A. Steckl, H. Mogul, S. Novak, 1992 .

Improved depth resolution in Auger depth profiling of multilayered thin films by reactive ion sputtering

A. J. Braundmeier, C. Magee, C. A. Evans, 1979 .

Ultra-shallow junction measurements: A review of SIMS approaches for annealed and processed wafers

C. Magee, V. Chia, C. Hitzman, 1998 .

Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors

Donald R. Young, C. W. Magee, R. Gale, 1983 .

Secondary ion quadrupole mass spectrometer for depth profiling--design and performance evaluation.

C. Magee, C W Magee, W L Harrington, 1978, The Review of scientific instruments.

Meltback and pullover as causes of disturbances in liquid‐phase epitaxial growth of InGaAsP/InP 1.3‐μm laser material

R. T. Smith, C. Magee, I. Ladany, 1981 .

Alkali element background reduction in laser ICP-MS

C. Magee, C. A. Norris, 2014 .

Ion beams in silicon processing and characterization

Mark E. Law, Michael I. Current, S. T. Picraux, 1997 .

The Polycrystalline-Si Contact to GaAs.

K. Kavanagh, I. Haller, J. Woodall, 1986 .

Saturation of deuterium retention in carbon a new calibration for plasma edge probes

W. Wampler, C. Magee, D. Brice, 1981 .

Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxy

C. Magee, B. Anthony, T. Hsu, 1992 .

Redistribution of dopants in ion‐implanted silicon by pulsed‐laser annealing

B. Appleton, S. Wilson, C. Magee, 1978 .

Edge-effects correction in depth profiles obtained by ion-beam sputtering

D. W. Hoffman, C. Magee, I. Tsong, 1980 .

Volume expansion of ion‐implanted diamond

C. Magee, E. Maby, J. Morewood, 1981 .

Investigation of p-dopant diffusion in polymer films and bulk heterojunctions: Stable spatially-confined doping for all-solution processed solar cells

S. Barlow, S. Marder, A. Kahn, 2015 .

In situ B-doped Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition: Physical and electrical characterization

C. Magee, S. Thomas, B. Anthony, 1992 .

Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0/spl deg/ using off-angle substrates

T. Buyuklimanli, C. Magee, K. Suzuki, 2006, IEEE Transactions on Electron Devices.

Hydrogen isotope trapping in materials exposed in PLT

S. T. Picraux, W. Wampler, C. Magee, 1979 .

Redistribution of implanted chlorine in SiO2 films on silicon during subsequent oxidation

C. Magee, S. R. Butler, Y. Sheu, 1986 .

The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

C. Magee, S. R. Butler, F. J. Feigl, 1986 .

An examination of the effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1995 .

Sub-100 mn p+/n junction formation using plasma immersion ion implantation

M. Lieberman, N. Cheung, P. Chu, 1991 .

Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometry

C. Magee, D. Carlson, 1980 .

Characteristics of 56 Mev Oxygen Implantation into Si and III-V Semiconductors

S. Pearton, B. Jalali, J. Poate, 1990 .

Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates

J. Sturm, M. Thewalt, D. Eaglesham, 1996 .

Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface

D. Sadana, C. Magee, J. Washburn, 1983 .

Multiple age components in individual molybdenite grains

C. Magee, H. Lowers, R. Creaser, 2012 .

Crystallographic characterization of GexSi1−x/Si superlattices grown by remote plasma‐enhanced chemical vapor deposition

S. Banerjee, L. Rabenberg, C. Magee, 1991 .

Electrical Properties of n- and p-type In 0.53 Ga 0.47 As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

C. Magee, S. Narayan, D. Capewell, 1987 .

Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

J. Sturm, E. Prinz, V. Venkataraman, 1996 .

ANNEALING OF ION-IMPLANTED GaAs WITH A PULSED RUBY LASER*

C. Magee, S. Liu, C. Wu, 1980 .

Millimeter-Wave Device Technology

A. Rosen, C. Magee, M. Caulton, 1982 .

In situ P-doped Si and Si1−xGex epitaxial films grown by remote plasma enhanced chemical vapor deposition

C. Magee, S. Thomas, R. Qian, 1995 .

Secondary ion mass spectrometry and its relation to high-energy ion beam analysis techniques

Charles W. Magee, C. Magee, 1981 .

Low‐temperature growth of GexSi1−x/Si heterostructures on Si(100) by remote plasma‐enhanced chemical vapor deposition

S. Banerjee, C. Magee, B. Anthony, 1991 .

Analysis of elemental and isotopic variation in glass frictionators from 0.22 rimfire primers.

K. Kirkbride, C. Magee, H. Kobus, 2018, Forensic Science International.

Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors

B. Jalali, C. Magee, R. Hull, 1993 .

Accuracy of SIMS in determining ion implanted B doses as confirmed by nuclear reaction analysis

H. Gossmann, D. Jacobson, C. Magee, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor deposition

S. Banerjee, L. Rabenberg, C. Magee, 1992 .

Extreme isotopologue disequilibrium in molecular SIMS species during SHRIMP geochronology

C. Magee, M. Danišík, T. Mernagh, 2016 .

Passivation of GaAs surfaces*

J. Pankove, C. Magee, J. E. Berkeyheiser, 1983 .

Base Resistance and Effective Bandgap Reduction in n-p-n Si/Sil-,Ge,/Si HBT's with Heavy Base Doping

J. Sturm, E. Prinz, V. Venkataraman, 1996 .

Effect of impact energy on SIMS U–Pb zircon geochronology

C. Magee, J. Ferris, 2014 .

MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

W. Ting, G. Lo, D. Kwong, 1990, IEEE Electron Device Letters.

Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Sia)

T. Buyuklimanli, C. Magee, S. Walther, 2006 .

Study of Sitox Process and its Application to Advanced MOS Devices

S. Banerjee, J. Lee, C. Magee, 1992 .

Depth Profiling by SIMS : Depth Resolution , Dynamic Range and Sensitivity

C. Magee, C. A. Evans, R. Honig, 2022 .

An ion-implanted standard for 11B

C. Magee, W. Lennard, A. Todd, 2006 .

Modeling of effect of interfacial charges on impurity diffusions in silicon-on-sapphire device processing

R. Rios, A. Rothwarf, C. Magee, 1986, IEEE Transactions on Electron Devices.

Electrical properties of In0,53Ga0,47As layers formed by ion implantation and rapid thermal (flash) anneal

C. Magee, S. Narayan, D. Capewell, 1986 .

Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

J. Woicik, S. Novak, C. Magee, 2004 .

Characterization of nitrided SiO2 thin films using secondary ion mass spectrometry

C. W. Magee, C. Magee, M. R. Frost, 1996 .

Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS

C. Magee, 1979 .

Analysis of hydrogen and deuterium by secondary ion mass spectrometry as applied to fusion technology

C. Magee, 1983 .

A comprehensive study of lateral and vertical current transport in Si/Si/sub 1-x/Ge/sub xSi HBT's

J. Sturm, E. Prinz, V. Venkataraman, 1993, Proceedings of IEEE International Electron Devices Meeting.

Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's

J. Sturm, E. Prinz, V. Venkataraman, 1993 .

Dopant profile changes induced by pulsed laser annealing

R. F. Wood, B. Appleton, J. Narayan, 1980 .

Ion Beam Analysis of Surface Modifications in Tokamaks

S. T. Picraux, W. Wampler, C. Magee, 1979, IEEE Transactions on Nuclear Science.

Final report on VAMAS round‐robin study to evaluate a correction method for saturation effects in DSIMS

D. Simons, C. Magee, J. Bennett, 2015 .

VAMAS round‐robin study to evaluate a correction method for saturation effects in D‐SIMS

D. Simons, C. Magee, J. Bennett, 2014 .