Zhongda Li

发表

High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications

T. Chow, Zhongda Li, J. Waldron, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Comparison of 600V Si, SiC and GaN Power Devices

T. Chow, K. Ueno, Z. Stum, 2014 .

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

R. F. Karlicek, T. Chow, Zhongda Li, 2013 .

A comparison of IGBT models for use in circuit design

Richard McMahon, P. A. Mawby, A. N. Githiari, 1997 .

Channel scaling of hybrid GaN MOS-HEMTs

T. Chow, Zhongda Li, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

T. Chow, Zhongda Li, 2013 .

Design and Simulation of Novel Enhancement Mode 5–20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications

T. Chow, Zhongda Li, 2013 .

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

T. Chow, Zhongda Li, 2013, IEEE Transactions on Electron Devices.

Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications

T. Chow, Zhongda Li, 2012 .

Robustness of GaN vertical superjunction HEMT

T. Chow, Zhongda Li, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

T. Chow, Zhongda Li, 2011 .

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

T. Chow, A. Elasser, M. Ghezzo, 2000 .

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

T. Chow, Zhongda Li, S. Takashima, 2013, IEEE Transactions on Electron Devices.

Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN

T. Chow, Zhongda Li, S. Takashima, 2013 .

Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices

T. Chow, Zhongda Li, S. Takashima, 2012 .

Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs

T. Chow, Zhongda Li, H. Naik, 2009 .