Shenglei Zhao

发表

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Yuan Wang, Xiaohua Ma, Yue Hao, 2014 .

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Yi Wang, Xiaohua Ma, Yue Hao, 2014 .

Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

A review of the most recent progresses of state-of-art gallium oxide power devices

Y. Hao, Q. Feng, Peijun Ma, 2019, Journal of Semiconductors.

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, IEEE Transactions on Electron Devices.

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

Y. Hao, Qing Yang, Jincheng Zhang, 2021, Science China Information Sciences.

Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2020 .

Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm*

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2015 .

Unidirectional p-GaN gate HEMT with composite source-drain field plates

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2022, Sci. China Inf. Sci..

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021 .

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2021, Science China Materials.

Wafer-Scale Si–GaN Monolithic Integrated E-Mode Cascode FET Realized by Transfer Printing and Self-Aligned Etching Technology

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2020, IEEE Transactions on Electron Devices.

Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2020 .

Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Semiconductor Science and Technology.

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Enhanced breakdown voltage of Si-GaN Monolithic Heterogeneous Integrated Cascode FETs by the device structure design

J. Wan, Chunfu Zhang, Jincheng Zhang, 2022, Solid-State Electronics.

Enhanced Breakdown Voltage of Si-GaN Monolithic Heterogeneous Integrated Cascode FETs by the Device Structure Design

Y. Hao, J. Wan, Chunfu Zhang, 2021, Solid-State Electronics.

Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2020 .

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2019, Applied Physics Letters.

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Science China Information Sciences.

1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2019, Chinese Physics B.

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Y. Hao, Xiao-hua Ma, Shenglei Zhao, 2013 .

Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode

Chen-Guang Liao, Shenglei Zhao, Yang Dai, 2021, Electronics.

Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021 .

High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique

Y. Hao, Kunshu Wang, Jincheng Zhang, 2020, physica status solidi (a).

Mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer

Y. Hao, G. Hu, Xiao-hua Ma, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

A novel normally-off GaN vertical Schottky source tunnel-junction field-effect transistor

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2022, Micro and Nanostructures.

Enhancement-Mode Heterojunction Vertical β-Ga2O3 MOSFET with a P-Type Oxide Current-Blocking Layer

Xiaohui Xie, Q. Feng, Chunfu Zhang, 2022, Applied Sciences.

Progress in state-of-the-art technologies of Ga2O3 devices

Yue Hao, Chunfu Zhang, Shenglei Zhao, 2021 .

Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2020, Science China Physics, Mechanics & Astronomy.

Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Applied Physics Express.

A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Journal of Physics D: Applied Physics.

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021, Applied Physics Express.

1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination

Y. Hao, Jincheng Zhang, Jing Ning, 2020, IEEE Electron Device Letters.

Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress

Q. Feng, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

Y. Hao, G. Han, Chunfu Zhang, 2016 .

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, Applied Physics Express.

Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination

Y. Hao, Xiaofei Wang, Chunfu Zhang, 2021, IEEE Transactions on Electron Devices.

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021, IEEE Journal of the Electron Devices Society.

Investigation of trap states in Al 2 O 3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Enhancement-mode Al2O3/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment

Xiaohua Ma, Yue Hao, JunShuai Xue, 2014 .

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

Yue Hao, Chunfu Zhang, Yan Liu, 2016, IEEE Electron Device Letters.

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2019, IEEE Electron Device Letters.

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Tangsheng Chen, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

Tao Zhang, Hong Zhou, Yachao Zhang, 2020, IEEE Transactions on Industrial Electronics.

A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

Y. Hao, Sen Huang, Jincheng Zhang, 2020, IEEE Transactions on Power Electronics.

Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Journal of Physics D: Applied Physics.

Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT

Jincheng Zhang, Shenglei Zhao, Yue Hao, 2023, Vacuum.

High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2023, IEEE Electron Device Letters.

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Applied Physics Letters.

Trap states in AlGaN channel high-electron-mobility transistors

Kai Zhang, Xiaohua Ma, Yue Hao, 2013 .

Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

Shenglei Zhao, Weihang Zhang, Xi Liu, 2024, IEEE Transactions on Electron Devices.

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, Applied Physics Express.