Minhan Mi

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

Y. Hao, Xiao-hua Ma, Chong Wang, 2017, IEEE Electron Device Letters.

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2017, IEEE Transactions on Electron Devices.

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Fully recessed-gate normally-off AlGaN/GaN high electron mobility transistors with high breakdown electric field*

Y. Hao, Xiao-hua Ma, Chong Wang, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Influence of thermal annealing on AlGaN/GaN HEMT by fluorine plasma treatment

Y. Hao, Xiao-hua Ma, Chong Wang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Electron Device Letters.

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Y. Hao, M. Uren, Xiao-hua Ma, 2020 .

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

Y. Hao, M. Uren, Xiao-hua Ma, 2020, Semiconductor Science and Technology.

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment

Xiao-hua Ma, Minhan Mi, K. Cheng, 2022, IEEE Electron Device Letters.

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Xiao-hua Ma, Minhan Mi, Jingshu Guo, 2022, Science China Information Sciences.

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Y. Hao, Xiao-hua Ma, Chong Wang, 2017 .

Experimental assessment of self-heating in AlGaN/GaN HEMTs for microwave application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, Applied Physics Express.

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

Y. Hao, Xiao-hua Ma, Chunfu Zhang, 2019, physica status solidi (a).

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

Improvement of Electron Transport Property and on-Resistance in Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Xiao-hua Ma, Minhan Mi, Bin Hou, 2022, IEEE Transactions on Electron Devices.

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2021, IEEE Microwave Magazine.

A systematic study of device structure on DC and small‐signal characteristics of millimeter‐wave AlGaN/GaN HEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Transactions on Electron Devices.

Influence of Fin-Like Configuration on Small-Signal Performance of AlGaN/GaN HEMTs

Xiao-hua Ma, Minhan Mi, Yang Lu, 2022, IEEE Transactions on Electron Devices.

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity

Y. Hao, Hao Lu, Xiao-hua Ma, 2021, IEEE Transactions on Electron Devices.

Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, J. Mo, 2020, Semiconductor Science and Technology.

High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

Xiao-hua Ma, Mei Yang, Minhan Mi, 2023, IEEE Transactions on Electron Devices.

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Xiao-hua Ma, Minhan Mi, Bin Hou, 2017 .

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Y. Hao, Hao Lu, Xiao-hua Ma, 2022, IEEE Transactions on Electron Devices.

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Journal of the Electron Devices Society.

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications

Xiao-hua Ma, Minhan Mi, Yue Hao, 2022, 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).

Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage

Minhan Mi, Q. Zhu, Meng Zhang, 2022, 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

Xiao-hua Ma, Mei Yang, Minhan Mi, 2023, IEEE Journal of the Electron Devices Society.

Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in the Ka band

Xiao-hua Ma, Minhan Mi, Q. Zhu, 2023, Semiconductor Science and Technology.

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

High performance InAlN/GaN high electron mobility transistors for low voltage applications

Y. Hao, Meng Zhang, Xiao-hua Ma, 2020 .