Bin Hou

发表

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Yi Wang, Xiaohua Ma, Yue Hao, 2014 .

Analysis of the Breakdown Characterization Method in GaN-Based HEMTs

Y. Hao, Minhan Mi, Bin Hou, 2016, IEEE Transactions on Power Electronics.

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2018, IEEE Transactions on Electron Devices.

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017 .

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

Xiao-hua Ma, S. Zhang, Sen Huang, 2019, Applied Physics Letters.

Threshold Voltage Instability (PBTI) of GaN-Based Recessed MOS-HEMTs with Fast-IV-Sweep Method

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Y. Hao, Xiao-hua Ma, Peijun Ma, 2020, AIP Advances.

Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Chinese Physics B.

Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018 .

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

Y. Hao, X. Lu, Xiao-hua Ma, 2018, IEEE Electron Device Letters.

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Transactions on Electron Devices.

Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Applied Physics Letters.

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Impact of fluorine plasma treatment on AlGaN/GaN high electronic mobility transistors by simulated and experimental results

Y. Liu, Xiao-hua Ma, Bin Hou, 2016 .

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2017, IEEE Transactions on Electron Devices.

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

K. Cheng, Xiao-hua Ma, P. Wang, 2022, Applied Physics Letters.

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Y. Hao, M. Uren, Xiao-hua Ma, 2020 .

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

Y. Hao, M. Uren, Xiao-hua Ma, 2020, Semiconductor Science and Technology.

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

Xiao-hua Ma, Bin Hou, Fang Song, 2022, IEEE Transactions on Electron Devices.

Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Device and Materials Reliability.

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

Improvement of Electron Transport Property and on-Resistance in Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas

Y. Hao, Lvkang Shen, Ming Liu, 2019, Applied Physics Letters.

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Xiao-hua Ma, Minhan Mi, Bin Hou, 2022, IEEE Transactions on Electron Devices.

Comparative Study on Charge Trapping Induced ${V}_{\textsf{th}}$ Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Xiaohua Ma, Yue Hao, Qing Zhu, 2018, IEEE Transactions on Electron Devices.

High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

Xiao-hua Ma, Bin Hou, Ling Yang, 2022, IEEE Electron Device Letters.

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Yue Hao, Wei-Wei Chen, Bin Hou, 2015, IEEE Transactions on Electron Devices.

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Transactions on Electron Devices.

Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack

Y. Hao, Xiao-hua Ma, Bin Hou, 2017, IEEE Transactions on Electron Devices.

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity

Y. Hao, Hao Lu, Xiao-hua Ma, 2021, IEEE Transactions on Electron Devices.

Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Electron Devices.

Enhancement-mode Al2O3/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment

Xiaohua Ma, Yue Hao, JunShuai Xue, 2014 .

Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Xiao-hua Ma, Minhan Mi, Bin Hou, 2017 .

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Y. Hao, Hao Lu, Xiao-hua Ma, 2022, IEEE Transactions on Electron Devices.

High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Xiao-hua Ma, Bin Hou, Ling Yang, 2023, IEEE Electron Device Letters.

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Journal of the Electron Devices Society.

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2014 .

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Xiaohua Ma, Bin Hou, Yue Hao, 2014, Microelectron. Reliab..

The Improvement Breakdown Voltage of GaN on Si Pin Diode by Stepped Sidewall Treated with Fluorine Plasma

Xiao-hua Ma, Bin Hou, Ling Yang, 2022, 2022 IEEE 2nd International Conference on Computer Systems (ICCS).

Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process

Xiao-hua Ma, P. Wang, Bin Hou, 2023, Diamond and Related Materials.

High performance InAlN/GaN high electron mobility transistors for low voltage applications

Y. Hao, Meng Zhang, Xiao-hua Ma, 2020 .

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

Bin Hou, J. Ao, Ling Yang, 2023, 2022 10th International Symposium on Next-Generation Electronics (ISNE).