Haojie Jiang

发表

Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess

Hui Yang, Bo Zhang, Chao Zhao, 2016, IEEE Transactions on Electron Devices.

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

E. Simoen, Z. Ji, Guilei Wang, 2021, IEEE Journal of the Electron Devices Society.

Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Journal of Semiconductors.

Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure

Sen Huang, Junfeng Li, Chao Zhao, 2016 .

Comparative Study of AlGaN / GaN HEMTs with LPCVD-and PECVD-SiN x Passivation

Weijun, Sen Huang, Junfeng Li, 2014 .

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Applied Physics Letters.

Investigation of Dynamic-QGD on Enhancement-Mode AlGaN/GaN MIS-HEMTs with SiNx Passivation Dielectric

Xinyu Liu, Sen Huang, Q. Jiang, 2022, International Symposium on Power Semiconductor Devices and IC's.

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.

Xinyu Liu, Sen Huang, Junfeng Li, 2018, ACS applied materials & interfaces.

Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Sen Huang, Wenwu Wang, Xinyu Liu, 2021 .

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

W. Luo, Sen Huang, Junfeng Li, 2015, IEEE Electron Device Letters.

SiNx films and membranes for photonic and MEMS applications

Yaodong Liu, Guilei Wang, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.

Sen Huang, Wenwu Wang, Xuebang Wu, 2021, ACS applied materials & interfaces.

Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Bo Zhang, Sen Huang, Junfeng Li, 2016 .

Study of HKMG Stack Interface Engineer Applicable to 22nm/16nm Finfet Mosfet

Ying Luo, Chao Zhao, Junfeng Li, 2014 .

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.

Xinyu Liu, Sen Huang, Junfeng Li, 2018, ACS applied materials & interfaces.