Hongwei Gao

发表

Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess

Hui Yang, Bo Zhang, Chao Zhao, 2016, IEEE Transactions on Electron Devices.

On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

Hui Yang, M. Ikeda, Jianxun Liu, 2018, IEEE Journal of Selected Topics in Quantum Electronics.

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

Hui Yang, M. Ikeda, Yu Zhou, 2018 .

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Kevin J. Chen, Sen Huang, Chao Zhao, 2016, IEEE Electron Device Letters.

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Kevin J. Chen, Sen Huang, Xinyu Liu, 2018, IEEE Transactions on Electron Devices.

Reverse‐time migration from rugged topography using irregular, unstructured mesh

Qiancheng Liu, Hongwei Gao, Hongwei Gao, 2017 .

Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates.

Hui Yang, Jianxun Liu, Yu Zhou, 2019, Nanotechnology.

Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN

Hui Yang, M. Ikeda, Jianxun Liu, 2020 .

Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

Hui Yang, Yu Zhou, Hongwei Gao, 2018 .

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing

Hui Yang, Yu Zhou, Hongwei Gao, 2017, Materials.

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Hui Yang, M. Ikeda, Jianxun Liu, 2018, Scientific Reports.

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Hui Yang, Yu Zhou, Hongwei Gao, 2021, Applied Physics Letters.

Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate

Hui Yang, Yu Zhou, Hongwei Gao, 2021, Applied Physics Express.

GaN-based ultraviolet microdisk laser diode grown on Si

Hui Yang, M. Ikeda, Jianxun Liu, 2019, Photonics Research.

Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

Kevin J. Chen, Sen Huang, Shu Yang, 2019, Applied Physics Express.

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Hui Yang, Yu Zhou, Hongwei Gao, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics.

A p‐GaN‐Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer

Hui Yang, Yu Zhou, Hongwei Gao, 2020, physica status solidi (a).

Effect of Thermal Cleaning Prior to p-GaN Gate Regrowth for Normally Off High-Electron-Mobility Transistors.

Hui Yang, Yu Zhou, Hongwei Gao, 2019, ACS applied materials & interfaces.

Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

Hui Yang, Jianxun Liu, Yu Zhou, 2019, IEEE Electron Device Letters.

p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process

Hui Yang, Yanfei Zhao, Yu Zhou, 2017, IEEE Journal of the Electron Devices Society.

Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

Hui Yang, Yu Zhou, Hongwei Gao, 2020, Applied Physics Letters.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

Hui Yang, M. Ikeda, Jianxun Liu, 2020 .

Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

Z. Qian, Shuiming Li, Hongwei Gao, 2016, Journal of Materials Science: Materials in Electronics.

InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si

Hui Yang, Jianxun Liu, Yu Zhou, 2019, ACS Photonics.

Performance improvement of InGaN-based laser grown on Si by suppressing point defects.

Hui Yang, M. Ikeda, Jianxun Liu, 2019, Optics express.

Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure

H. Yang, Yu Zhou, Hongwei Gao, 2018 .

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl 2 /N 2 /O 2 plasma with a low-energy ion bombardment

Hui Yang, Yanfei Zhao, Yu Zhou, 2017 .

High ${f}_{{T}}$ AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio

Hui Yang, Tangsheng Chen, Yu Zhou, 2018, IEEE Electron Device Letters.

Self-terminated Gate Recessing with a Low Density of Interface States and High Uniformity for Enhancement-mode GaN HEMTs

Hui Yang, Yu Zhou, Hongwei Gao, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Hui Yang, M. Ikeda, Jianxun Liu, 2018, Scientific Reports.

The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes

Hui Yang, M. Ikeda, Jianxun Liu, 2019, Journal of Physics D: Applied Physics.

Normally-Off Metal-Insulator-Semiconductor P-GaN Gated AlGaN/GaN High Electron Mobility Transistors with Low Gate Leakage Current

Hongwei Gao, J. Ao, Xiaobo Li, 2023, Journal of Crystal Growth.

High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Hui Yang, Qi Zhou, Jianxun Liu, 2021, IEEE Electron Device Letters.

Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si

Hui Yang, M. Ikeda, Jianxun Liu, 2019, Journal of Physics D: Applied Physics.

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Baoshun Zhang, Sheng Liu, Yong Cai, 2016 .

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

H. Yang, Jianxun Liu, Yu Zhou, 2022, Journal of Physics D: Applied Physics.

A Stable and Compact Mid-IR at 6.45 μm Exceeding 6 mJ of Pulse Energy BaGa4Se7 Optical Parametric Oscillator

Y. Bo, Ji Yao, Hongwei Gao, 2023, Applied Sciences.

Elastic wave modelling in 3-D fractured media: an explicit approach

Hongwei Gao, Hongwei Gao, Jianfeng Zhang, 2009 .

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

H. Yang, Jianxun Liu, Yu Zhou, 2022, Applied Physics Letters.

Room-temperature electrically pumped InGaN-based microdisk laser grown on Si.

Masao Ikeda, Hui Yang, Deyao Li, 2018, Optics express.

Equivalent circuit model of GaN high electron mobility transistor with consideration of non-ideal effects using genetic algorithm

H. Yang, Yu Zhou, Hongwei Gao, 2023 .

Crystal growth for different substrate orientations during laser directed solidification of single crystal superalloys

Dong Liu, Shuquan Zhang, Hua-ming Wang, 2023, Journal of Alloys and Compounds.

Accelerating Unstructured Grid-Based Seismic Modeling on GPU

Hongwei Gao, Jianfeng Zhang, Zhefeng Wei, 2014 .

Parallel 3‐D simulation of seismic wave propagation in heterogeneous anisotropic media: a grid method approach

Hongwei Gao, Hongwei Gao, Jianfeng Zhang, 2006 .

Unstructured mesh based elastic wave modelling on GPU: a double-mesh grid method

Jianfeng Zhang, Kai Yang, Hongwei Gao, 2017 .

Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy

Hui Yang, Yanfei Zhao, Hongwei Gao, 2019, Scientific Reports.

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Sen Huang, Shu Yang, Wenwu Wang, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Hongwei Gao, M. Feng, Y. Zhong, 2023, ACS Photonics.

High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth

H. Yang, Jianxun Liu, Yu Zhou, 2023, Crystals.