D. K. Gaskill

发表

III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium Held April 8-12 1996, San Francisco, California, U.S.A. Volume 423.

D. K. Gaskill, Charles D. Brandt, Robert J. Nemanich, 1996 .

Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy

M. Sydor, D. K. Gaskill, J. Davis, 1987, Other Conferences.

Graphene growth on SiC(000-1): optimization of surface preparation and growth conditions

D. K. Gaskill, Charles R. Eddy, Nelson Y. Garces, 2015, SPIE NanoScience + Engineering.

Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime

D. K. Gaskill, Joseph L. Tedesco, C. R. Eddy, 2011 .

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

D. K. Gaskill, N. Y. Garces, Virginia D. Wheeler, 2012 .

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

K. A. Jenkins, Yu-Ming Lin, D. K. Gaskill, 2011, IEEE Electron Device Letters.

High temperature measurements of metal contacts on epitaxial graphene

D. K. Gaskill, Joseph L. Tedesco, C. R. Eddy, 2011 .

Terahertz ellipsometry and terahertz optical-Hall effect

Tino Hofmann, Craig M. Herzinger, Mathias Schubert, 2011 .

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

Tino Hofmann, Mathias Schubert, John A. Woollam, 2011 .

Epitaxial graphene RF field-effect transistors

P. Asbeck, D. K. Gaskill, D. Curtis, 2009, 2009 Device Research Conference.