C. Pelosi

发表

The potential of III‐V semiconductors as terrestrial photovoltaic devices

M. Bosi, C. Pelosi, 2007 .

Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP ∕ GaAs : A Study by the Chemically Sensitive (200) Diffraction

G. Attolini, M. Bosi, C. Pelosi, 2009 .

Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions

G. Attolini, M. Bosi, C. Pelosi, 2009 .

MOVPE growth of homoepitaxial germanium

Claudio Ferrari, Ru-Wen Peng, E. Gombia, 2008 .

Light concentration increases solar-cell efficiency and reduces cost

C. Pelosi, Claudio Pelosi, 2007 .

Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures

G. Attolini, M. Bosi, D. Giubertoni, 2005 .

InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells

J. Jiménez, C. Pelosi, V. Hortelano, 2009 .

Some properties of CdS/p-Ge heterojunctions grown by chemical transport

C. Pelosi, C. Ghezzi, C. Paorici, 1976 .

Epitaxial technologies in the growth of semiconductors for device applications

C. Pelosi, S. Franchi, D. Margadonna, 1979 .

Iodine detection in iodine-doped CdS single crystals

G. Attolini, C. Pelosi, C. Paorici, 1977 .

Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

G. Attolini, J. Jiménez, C. Pelosi, 2004 .

Growth of Dielectric Al2O3 Films by Atomic Layer Deposition

E. Gombia, C. Pelosi, C. Frigeri, 2008 .

Metalorganic vapor phase epitaxial growth and structural characterization of GaAs/InP heterostructures

L. Lazzarini, G. Salviati, G. Attolini, 1994 .

Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapor phase epitaxy InP

G. Salviati, G. Attolini, C. Pelosi, 1986 .

Zn1-xMnxGa2Se4: A new series of diluted magnetic semiconductors

G. Attolini, C. Pelosi, M. Morón, 1999 .

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

G. Attolini, C. Pelosi, T. Prutskij, 2011 .

Vapour phase chemical transport properties of the cadmium telluride-iodine system

C. Pelosi, C. Paorici, 1977 .

Chemical transport mechanisms in the Cd:Te:H:I system

G. Attolini, C. Pelosi, C. Paorici, 1974 .

Chemical-transport properties of the Cd:Te:H:Cl:N system

G. Attolini, C. Pelosi, C. Paorici, 1973 .

Kinetics of vapour growth in the system CdS : I2

C. Pelosi, C. Paorici, 1976 .

Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions

C. Pelosi, C. Frigeri, R. Gleichmann, 1990 .

Epitaxial growth of cadmium sulphide on (111) germanium substrates

C. Pelosi, C. Paorici, G. Bolzoni, 1975 .

Investigation of the GaAs-pyramids overgrowth using MOCVD

G. Attolini, D. Gregušová, R. Kúdela, 2003 .

Stacking fault pyramids, island growth and misfit dislocations in InxGa1−xAs/InP heterostructures grown by vapour phase epitaxy

G. Attolini, C. Pelosi, C. Frigeri, 1991 .

Closed-tube chemical-transport mechanisms in the Cd:Te:H:Cl:N system

G. Attolini, C. Pelosi, C. Paorici, 1975 .

Growth and defect structure of CdS epitaxial layers on (111)Ge substrates

C. Pelosi, C. Ghezzi, C. Paorici, 1977 .

Epitaxial growth of CdTe on CdS substrates

C. Pelosi, C. Paorici, G. Zuccalli, 1972 .

Characterisation of GaAsN layers grown by MOVPE

M. Calicchio, G. Attolini, M. Bosi, 2006 .

Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications

E. Gombia, C. Ferrari, G. Attolini, 2008, 2008 International Conference on Advanced Semiconductor Devices and Microsystems.

Study of narrow InGaP/(In)GaAs quantum wells

C. Ferrari, R. Kúdela, J. Novák, 2002 .

Vapour phase in-situ etch of (100) GaAs substrates

G. Salviati, G. Attolini, C. Pelosi, 1983 .

Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers

C. Pelosi, T. Prutskij, 2010 .

Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy

P. P. Lottici, D. Bersani, G. Attolini, 2001 .

Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures

J. Groenen, G. Attolini, C. Pelosi, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

Relationship Between Crystal Defects, Ge Outdiffusion and V/III Ratio in MOVPE Grown (001) GaAs/Ge

C. Pelosi, C. Frigeri, F. Longo, 1993 .

Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy

G. Attolini, C. Pelosi, C. Frigeri, 1991 .

In-depth analysis of the interfaces in InGaP/GaAs heterosystems

G. Attolini, R. Kúdela, D. Giubertoni, 2004 .

Dislocation Generation Mechanisms and Layer Growth in InP Epitaxy as a Function of Growth Conditions

G. Attolini, C. Pelosi, C. Frigeri, 1988 .

InGaAs/InP Schottky barrier diode

C. Pelosi, L. Hernández, 1989 .

Polarization‐angle dependence of photoluminescence intensity of ordered GaInP2 layers: observation of polarization memory

C. Pelosi, T. Prutskij, R. Brito-Orta, 2008 .

Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method

G. Attolini, M. Bosi, C. Pelosi, 2008 .

Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

G. Attolini, J. Jiménez, C. Pelosi, 2002 .

Raman and Photoluminescence Mapping of Lattice Matched InGaP/GaAs Heterostructures

G. Attolini, J. Jiménez, C. Pelosi, 2001 .

Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques

Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta, 2005, Microelectron. J..