C. Bulle-lieuwma

发表

Relating the Morphology of Poly(p‐phenylene vinylene)/Methanofullerene Blends to Solar‐Cell Performance

Xiaoniu Yang, C. W. T. Bulle‐Lieuwma, Jan C. Hummelen, 2004 .

C. Bulle-lieuwma, 1993 .

Investigation of the defect structure of thin single‐crystalline CoSi2 (B) films on Si(111) by transmission electron microscopy

H. Känel, C. Bulle-lieuwma, D. Vandenhoudt, 1993 .

Microstructure of buried CoSi2 layers formed by high‐dose Co implantation into (100) and (111) Si substrates

C. Bulle-lieuwma, D. Vandenhoudt, A. H. V. Ommen, 1991 .

Growth of uniform epitaxial CoSi2 films on Si(111)

J. V. D. Veen, Richard J. Smith, C. Bulle-lieuwma, 1988 .

Surface analysis of reactive ion‐etched InP

C. Bulle-lieuwma, L. J. Ijzendoorn, R. V. Roijen, 1991 .

Suppression of surface topography development in ion-milling of semiconductors

C. Bulle-lieuwma, P. Zalm, 1987 .

High‐resolution Electron Microscopy of semiconductors and metals

C. Bulle-lieuwma, W. Coene, A. D. Jong, 1991 .

Surface and interface structure of epitaxial CoSi2 films on Si(111)

H. Sirringhaus, H. Känel, R. Stalder, 1991 .

Silicon strained layers grown on GaP(001) by molecular beam epitaxy

J. V. D. Veen, J. Frenken, C. Bulle-lieuwma, 1985 .

Ion beam synthesis of cobalt silicide: effect of implantation temperature

C. Bulle-lieuwma, D. Vandenhoudt, Jozef J M Ottenheim, 1991 .

Improved 1.5 μm wavelength lasers using high quality LP-OMVPE grown strained-layer InGaAs quantum wells

C. Bulle-lieuwma, T. V. Dongen, P. Thijs, 1990 .

Nondestructive Thin Film Defect Analysis of Silicon‐on‐Insulator Layers Made by Zone‐Melt Recrystallization and Wafer Bonding

A. D. Kock, J. Haisma, M. Theunissen, 1990 .

The effect of interstital Frank partial dislocations on the gradual degradation of 1.3‐μm double‐channel planar buried heterostructure laser diodes

J. Poorter, B. C. Cooman, C. Bulle-lieuwma, 1990 .

A photoluminescence study of Si/Ge superlattices

C. Bulle-lieuwma, D. Gravesteijn, C. W. Fredriksz, 1989 .

Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam

C. Bulle-lieuwma, F. Heuvel, M. Overwijk, 1993 .

Ion beam synthesis of heteroepitaxial Si/CoSi2/Si structures

C. Bulle-lieuwma, A. H. V. Ommen, Jozef J M Ottenheim, 1990 .

Observation and analysis of epitaxial growth of CoSi2 on (100) Si

C. Bulle-lieuwma, A. H. V. Ommen, J. Hornstra, 1992 .

Properties of CoSi2 formed on (001) Si

C. Bulle-lieuwma, C. Langereis, A. H. V. Ommen, 1988 .

Nucleation and Growth of Cosi 2 on (001) and (111) Si

C. Bulle-lieuwma, A. H. V. Ommen, J. Hornstra, 1987 .

Single crystalline CoSi2 layers formed by Co implantation into Si

C. Bulle-lieuwma, A. H. V. Ommen, Jozef J M Ottenheim, 1989 .

Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si

C. Bulle-lieuwma, L. J. Ijzendoorn, A. H. V. Ommen, 1989 .

Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation

C. Bulle-lieuwma, D. Vandenhoudt, A. D. Jong, 1991 .

High-resolution electron microscopy image contrast at the CoSi2/Si(111) interface

C. Bulle-lieuwma, A. D. Jong, 1990 .

Determination of the coordination number of Co atoms at the CoSi2 (A,B)/Si(111) interface by transmission electron microscopy

C. W. T. Bulle‐Lieuwma, J. Vrijmoeth, J. V. D. Veen, 1989 .

Structural Study of CoSi2/Si (001) and (111)

C. Bulle-lieuwma, L. J. Ijzendoorn, A. H. V. Ommen, 1989 .

TEM analysis of voids in UHV-deposited amorphous Si layers used for lateral solid phase epitaxial growth

M. Theunissen, C. Bulle-lieuwma, D. Gravesteijn, 1992 .

Ion-beam synthesis of a Si/β-FeSi2/Si heterostructure

D. J. Oostra, C. Bulle-lieuwma, D. Vandenhoudt, 1991 .

Copper Photodeposition on TiO2 Studied with HREM and EXAFS

D. Koningsberger, C. Bulle-lieuwma, J. Jacobs, 1989 .

Generation of misfit dislocations in semiconductors

C. W. T. Bulle‐Lieuwma, K. Kavanagh, J. V. D. Veen, 1987 .

Overcompensation of misfit strain by dislocation networks in phosphorus implanted (001) silicon

C. Bulle-lieuwma, W. Bartels, M. Viegers, 1983 .

Ion-bombardment-induced changes in the surface topography of MBE-grown silicon on gallium phosphide

J. Haisma, C. Bulle-lieuwma, P. Boudewijn, 1985 .

Characterization of polymer solar cells by TOF-SIMS depth profiling

René A. J. Janssen, C. W. T. Bulle‐Lieuwma, Pascal Jonkheijm, 2003 .

Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix

P. Stolk, A. Polman, W. Sinke, 1990 .

Epitaxial explosive crystallization of amorphous silicon

P. Stolk, A. Polman, W. Sinke, 1989 .

High quality AlxGa1-x-yInyP alloys grown by MOVPE on (311)B GaAs substrates

C. Bulle-lieuwma, A. Valster, C. Liedenbaum, 1991 .

Formation and damage of sidewalls after Cl2/CH4 based reactive ion beam of InP

C. Bulle-lieuwma, R. V. Roijen, E. A. Montie, 1992 .

Relating the morphology of a poly(p-phenylene vinylene)/methanofullerene blend to bulk heterojunction solar cell performance

Xiaoniu Yang, Jan C. Hummelen, Rene A. Janssen, 2004, SPIE Optics + Photonics.

Analysis of the Degradation Mechanism during Repeated Overwrite of Phase-Change Discs

L. V. Pieterson, M. Kaiser, M. Verheijen, 2007 .

Can carbon-implanted silicon be applied as wide-bandgap emitter?

D. J. Oostra, C. Bulle-lieuwma, P. Zalm, 1996 .

An STM study of Fe3O4 (100) grown by Molecular Beam Epitaxy

R. M. Wolf, C. Bulle-lieuwma, W. D. Jonge, 1997 .

Quantification of Liquid Crystal Concentrations in Periodically Stratified Polymer-Dispersed Liquid Crystal Films by Dynamic Secondary Ion Mass Spectrometry and Multivariate Statistical Analysis

J. Niemantsverdriet, D. Broer, C. Bulle-lieuwma, 2007 .

Characterization of poly(p-phenylene vinylene)/methanofullerene blends of polymer solar cells by time-of-flight secondary ion mass spectrometry

Xiaoniu Yang, C. W. T. Bulle‐Lieuwma, Jan C. Hummelen, 2004 .